Infineon Technologies IPW60R190C6
- Part Number:
- IPW60R190C6
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479507-IPW60R190C6
- Description:
- MOSFET N-CH 600V 20.2A TO247
- Datasheet:
- IPW60R190C6
Infineon Technologies IPW60R190C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R190C6.
- Package / CaseTO-247-3
- PackagingTube-packed
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs190mΩ @ 9.5A,10V
- Vgs(th) (Max) @ Id3.5V @ 630uA
- Drain to Source Voltage (Vdss)600V
- Continuous Drain Current (Id) @ 25°C20.2A Tc
- Power Dissipation-Max (Ta=25°C)151W Tc
- RoHS StatusRoHS Compliant
IPW60R190C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW60R190C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW60R190C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW60R190C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW60R190C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IPW60R190C6.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusMounting TypeSupplier Device PackageOperating TemperatureSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)View Compare
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IPW60R190C6TO-247-3Tube-packedN Channel190mΩ @ 9.5A,10V3.5V @ 630uA600V20.2A Tc151W TcRoHS Compliant--------------
-
PG-TO247-3Tube-packed------RoHS Compliant-------------
-
TO-247Tube-packedN Channel70mΩ @ 25.8A,10V3.5V @ 1.72mA600V53A Tc391W TcRoHS Compliant-------------
-
TO-247-3TubeN-Channel310mOhm @ 4.4A, 10V4.5V @ 440μA650V--ROHS3 CompliantThrough HolePG-TO247-3-55°C~150°C TJCoolMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)104.2W Tc1.1pF @ 100V11.4A Tc41nC @ 10V10V±20V
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