IPW60R190C6

Infineon Technologies IPW60R190C6

Part Number:
IPW60R190C6
Manufacturer:
Infineon Technologies
Ventron No:
2479507-IPW60R190C6
Description:
MOSFET N-CH 600V 20.2A TO247
ECAD Model:
Datasheet:
IPW60R190C6

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Specifications
Infineon Technologies IPW60R190C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R190C6.
  • Package / Case
    TO-247-3
  • Packaging
    Tube-packed
  • FET Type
    N Channel
  • Rds On (Max) @ Id, Vgs
    190mΩ @ 9.5A,10V
  • Vgs(th) (Max) @ Id
    3.5V @ 630uA
  • Drain to Source Voltage (Vdss)
    600V
  • Continuous Drain Current (Id) @ 25°C
    20.2A Tc
  • Power Dissipation-Max (Ta=25°C)
    151W Tc
  • RoHS Status
    RoHS Compliant
Description
IPW60R190C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW60R190C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW60R190C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPW60R190C6.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    RoHS Status
    Mounting Type
    Supplier Device Package
    Operating Temperature
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    View Compare
  • IPW60R190C6
    IPW60R190C6
    TO-247-3
    Tube-packed
    N Channel
    190mΩ @ 9.5A,10V
    3.5V @ 630uA
    600V
    20.2A Tc
    151W Tc
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPW60R280E6
    PG-TO247-3
    Tube-packed
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPW60R070C6
    TO-247
    Tube-packed
    N Channel
    70mΩ @ 25.8A,10V
    3.5V @ 1.72mA
    600V
    53A Tc
    391W Tc
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPW65R310CFDFKSA1
    TO-247-3
    Tube
    N-Channel
    310mOhm @ 4.4A, 10V
    4.5V @ 440μA
    650V
    -
    -
    ROHS3 Compliant
    Through Hole
    PG-TO247-3
    -55°C~150°C TJ
    CoolMOS™
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    104.2W Tc
    1.1pF @ 100V
    11.4A Tc
    41nC @ 10V
    10V
    ±20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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