Infineon Technologies IPU60R1K5CEAKMA2

Name: IPU60R1K5CEAKMA2
Brand: Infineon Technologies
SKU: 2487324-IPU60R1K5CEAKMA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPU60R1K5CEAKMA2

Manufacturer:: Infineon Technologies

Ventron No:: 2487324-IPU60R1K5CEAKMA2

Description:: MOSFET N-CH 600V 3.1A TO-251-3

ECAD Model:

Datasheet:: IPU60R1K5CEAKMA2

Specifications

Infineon Technologies IPU60R1K5CEAKMA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPU60R1K5CEAKMA2.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ CE
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Reach Compliance Code
not_compliant
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
49W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
200pF @ 100V
Current - Continuous Drain (Id) @ 25°C
3.1A Tc
Gate Charge (Qg) (Max) @ Vgs
9.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
3.1A
Max Dual Supply Voltage
600V
Drain Current-Max (Abs) (ID)
5A
Pulsed Drain Current-Max (IDM)
8A
Avalanche Energy Rating (Eas)
26 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPU60R1K5CEAKMA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 26 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 200pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 5A.There is a peak drain current of 8A, its maximum pulsed drain current.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).

IPU60R1K5CEAKMA2 Features
the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 3.1A
based on its rated peak drain current 8A.

IPU60R1K5CEAKMA2 Applications
There are a lot of Infineon Technologies
IPU60R1K5CEAKMA2 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IPU60R1K5CEAKMA2 More Descriptions

Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHSInfineon SCT
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Product Comparison

The three parts on the right have similar specifications to IPU60R1K5CEAKMA2.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Reach Compliance Code

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Max Dual Supply Voltage

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

FET Feature

View Compare
IPU60R1K5CEAKMA2

Infineon Technologies

18 Weeks

Surface Mount

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

SILICON

-40°C~150°C TJ

Tube

CoolMOS™ CE

2008

e3

yes

Active

3 (168 Hours)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

not_compliant

R-PSIP-T3

1

SINGLE WITH BUILT-IN DIODE

49W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.5 Ω @ 1.1A, 10V

3.5V @ 90μA

Halogen Free

200pF @ 100V

3.1A Tc

9.4nC @ 10V

10V

±20V

3.1A

600V

5A

8A

26 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPU60R2K0C6BKMA1

Infineon Technologies

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-55°C~150°C TJ

Tube

CoolMOS™

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

22.3W Tc

-

-

N-Channel

-

2Ohm @ 760mA, 10V

3.5V @ 60μA

-

140pF @ 100V

2.4A Tc

6.7nC @ 10V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

PG-TO251-3

600V

-

-

-

-

-

-

-

-

-

-

-

IPU60R1K5CEAKMA2 vs IPU60R2K0C6BKMA1
IPU60R1K4C6BKMA1

Infineon Technologies

-

Through Hole

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

SILICON

-55°C~155°C TJ

Tube

CoolMOS™

2008

e3

no

Discontinued

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

not_compliant

R-PSIP-T3

1

SINGLE WITH BUILT-IN DIODE

28.4W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

1.4 Ω @ 1.1A, 10V

3.5V @ 90μA

-

200pF @ 100V

3.2A Tc

9.4nC @ 10V

10V

±20V

3.2A

600V

-

8A

26 mJ

Non-RoHS Compliant

-

-

-

EAR99

NOT SPECIFIED

NOT SPECIFIED

3

28.4W

7ns

20 ns

40 ns

20V

650V

Super Junction

IPU60R1K5CEAKMA2 vs IPU60R1K4C6BKMA1
IPU60R1K5CEBKMA1

Infineon Technologies

-

-

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-40°C~150°C TJ

Tube

CoolMOS™ CE

-

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

28W Tc

-

-

N-Channel

-

1.5Ohm @ 1.1A, 10V

3.5V @ 90μA

-

200pF @ 100V

3.1A Tc

9.4nC @ 10V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

TO-251

600V

-

-

-

-

-

-

-

-

-

-

-

IPU60R1K5CEAKMA2 vs IPU60R1K5CEBKMA1

Certification

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IPU60R1~~(10)~~
IPU60R~~(20)~~
IPU60~~(20)~~
IPU6~~(21)~~
IPU~~(54)~~

Part Number	Manufacturers	Description	Price
IPU60R1K5CEAKMA2 DISTI #IPU60R1K5CEAKMA2-ND	Infineon Technologies AG	MOSFET N-CH 600V 3.1A TO-251-3 RoHS: Compliant	1500 $0.26965
IPU60R1K5CEAKMA2 DISTI #IPU60R1K5CEAKMA2	Infineon Technologies AG	600VCoolMOSªCEPowerTransistor - Rail/Tube (Alt: IP RoHS: Compliant	3000 $0.2069 6000 $0.1999 9000 $0.1929 15000 $0.1859 30000 $0.1829
IPU60R1K5CEAKMA2 DISTI #SP001396898	Infineon Technologies AG	600VCoolMOSªCEPowerTransistor (Alt: SP001396898) RoHS: Compliant	1 $0.3179 10 $0.2729 25 $0.2329 50 $0.1999 100 $0.1959 500 $0.1919 1000 $0.1889
IPU60R1K5CEAKMA2 DISTI #726-IPU60R1K5CEAKMA2	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	1 $0.62 10 $0.521 100 $0.318 1000 $0.246 2500 $0.21 10000 $0.195 25000 $0.185

Infineon Technologies IPU60R1K5CEAKMA2

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