Infineon Technologies IPS06N03LZ G
- Part Number:
- IPS06N03LZ G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586864-IPS06N03LZ G
- Description:
- MOSFET N-CH 25V 50A IPAK
- Datasheet:
- IPx06N03LZ G
Infineon Technologies IPS06N03LZ G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPS06N03LZ G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max83W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.9m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2V @ 40μA
- Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)50A
- Drain-source On Resistance-Max0.0095Ohm
- Pulsed Drain Current-Max (IDM)350A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)225 mJ
- RoHS StatusRoHS Compliant
IPS06N03LZ G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 225 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2653pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 350A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPS06N03LZ G Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)
IPS06N03LZ G Applications
There are a lot of Infineon Technologies
IPS06N03LZ G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 225 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2653pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 50A.Pulsed drain current is maximum rated peak drain current 350A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPS06N03LZ G Features
the avalanche energy rating (Eas) is 225 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)
IPS06N03LZ G Applications
There are a lot of Infineon Technologies
IPS06N03LZ G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPS06N03LZ G More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 20pF 100Volts C0G 5%
MOSFET N-CH 25V 50A TO251-3
MOSFET N-CH 25V 50A TO251-3
The three parts on the right have similar specifications to IPS06N03LZ G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodePbfree CodeTerminal FinishHTS CodeJEDEC-95 CodeView Compare
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IPS06N03LZ GThrough HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2008Obsolete3 (168 Hours)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEN-ChannelSWITCHING5.9m Ω @ 30A, 10V2V @ 40μA2653pF @ 15V50A Tc22nC @ 5V25V4.5V 10V±20V50A0.0095Ohm350A25V225 mJRoHS Compliant------
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Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2008Obsolete1 (Unlimited)3EAR99AVALANCHE RATED, LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE68W TcENHANCEMENT MODEN-ChannelSWITCHING5m Ω @ 30A, 10V2.2V @ 250μA3200pF @ 15V50A Tc31nC @ 10V30V4.5V 10V±20V50A0.0073Ohm350A30V60 mJRoHS Compliante3noTin (Sn)8541.29.00.95TO-251AA
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Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2008Obsolete3 (168 Hours)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODEN-ChannelSWITCHING5.9m Ω @ 30A, 10V2V @ 40μA2653pF @ 15V50A Tc22nC @ 5V25V4.5V 10V±20V50A0.0096Ohm350A25V225 mJRoHS Compliante3-MATTE TIN-TO-251AA
-
Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2008Obsolete3 (168 Hours)3EAR99LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE115W TcENHANCEMENT MODEN-ChannelSWITCHING4m Ω @ 50A, 10V2V @ 80μA5199pF @ 15V50A Tc41nC @ 5V25V4.5V 10V±20V50A0.0059Ohm350A25V600 mJRoHS Compliante3-MATTE TIN-TO-251AA
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