Infineon Technologies IPP80N08S2L-07

Name: IPP80N08S2L-07
Brand: Infineon Technologies
SKU: 3586198-IPP80N08S2L-07
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP80N08S2L-07

Manufacturer:: Infineon Technologies

Ventron No:: 3586198-IPP80N08S2L-07

Description:: MOSFET N-CH 75V 80A TO220-3

ECAD Model:

Datasheet:: IPP80N08S2L-07

Specifications

Infineon Technologies IPP80N08S2L-07 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N08S2L-07.

Package / Case
PG-TO220-3
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

IPP80N08S2L-07 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP80N08S2L-07 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP80N08S2L-07. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPP80N08S2L-07.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Factory Lead Time

Mount

Mounting Type

Transistor Element Material

Operating Temperature

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Surface Mount

ECCN Code

Additional Feature

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
IPP80N08S2L-07

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

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IPP80N03S4L-03

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

-

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IPP80N08S2L-07 vs IPP80N03S4L-03
IPP80N08S406AKSA1

Infineon Technologies

TO-220-3

Tube

ROHS3 Compliant

14 Weeks

Through Hole

Through Hole

SILICON

-55°C~175°C TJ

Automotive, AEC-Q101, OptiMOS™

2008

yes

Active

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

5.8m Ω @ 80A, 10V

4V @ 90μA

Halogen Free

4800pF @ 25V

80A Tc

70nC @ 10V

10V

±20V

80A

TO-220AB

80V

0.0058Ohm

320A

270 mJ

Contains Lead

-

-

-

-

-

-

IPP80N08S2L-07 vs IPP80N08S406AKSA1
IPP80N06S2L11AKSA1

Infineon Technologies

TO-220-3

Tube

ROHS3 Compliant

-

-

Through Hole

SILICON

-55°C~175°C TJ

OptiMOS™

2010

-

Discontinued

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

158W Tc

ENHANCEMENT MODE

-

N-Channel

11m Ω @ 60A, 10V

2V @ 93μA

-

2075pF @ 25V

80A Tc

80nC @ 10V

10V

±20V

-

TO-220AB

-

0.0147Ohm

320A

280 mJ

-

NO

EAR99

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

55V

80A

55V

IPP80N08S2L-07 vs IPP80N06S2L11AKSA1