IPP80N03S4L-03

Infineon Technologies IPP80N03S4L-03

Part Number:
IPP80N03S4L-03
Manufacturer:
Infineon Technologies
Ventron No:
3586244-IPP80N03S4L-03
Description:
MOSFET N-CH 30V 80A TO220-3
ECAD Model:
Datasheet:
IPP80N03S4L-03

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Specifications
Infineon Technologies IPP80N03S4L-03 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N03S4L-03.
  • Package / Case
    PG-TO220-3
  • Packaging
    Tube-packed
  • RoHS Status
    RoHS Compliant
Description
IPP80N03S4L-03 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP80N03S4L-03 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP80N03S4L-03. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPP80N03S4L-03.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Factory Lead Time
    Mounting Type
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Additional Feature
    View Compare
  • IPP80N03S4L-03
    IPP80N03S4L-03
    PG-TO220-3
    Tube-packed
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP80N06S207AKSA4
    TO-220-3
    Tube
    ROHS3 Compliant
    10 Weeks
    Through Hole
    NO
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    250W Tc
    ENHANCEMENT MODE
    N-Channel
    6.6m Ω @ 68A, 10V
    4V @ 180μA
    3400pF @ 25V
    80A Tc
    110nC @ 10V
    55V
    10V
    ±20V
    TO-220AB
    80A
    0.0066Ohm
    320A
    55V
    530 mJ
    -
  • IPP80N06S2L11AKSA1
    TO-220-3
    Tube
    ROHS3 Compliant
    -
    Through Hole
    NO
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2010
    -
    -
    Discontinued
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    158W Tc
    ENHANCEMENT MODE
    N-Channel
    11m Ω @ 60A, 10V
    2V @ 93μA
    2075pF @ 25V
    80A Tc
    80nC @ 10V
    55V
    10V
    ±20V
    TO-220AB
    80A
    0.0147Ohm
    320A
    55V
    280 mJ
    LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
  • IPP80N06S2LH5AKSA1
    TO-220-3
    Tube
    ROHS3 Compliant
    -
    Through Hole
    NO
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2006
    -
    -
    Discontinued
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    -
    -
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    N-Channel
    5m Ω @ 80A, 10V
    2V @ 250μA
    5000pF @ 25V
    80A Tc
    190nC @ 10V
    55V
    4.5V 10V
    ±20V
    TO-220AB
    80A
    0.0065Ohm
    320A
    55V
    700 mJ
    LOGIC LEVEL COMPATIBLE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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