Infineon Technologies IPP80N06S3L-06

Name: IPP80N06S3L-06
Brand: Infineon Technologies
SKU: 2853983-IPP80N06S3L-06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP80N06S3L-06

Manufacturer:: Infineon Technologies

Ventron No:: 2853983-IPP80N06S3L-06

Description:: MOSFET N-CH 55V 80A TO-220

ECAD Model:

Datasheet:: IPB(I,P)80N06S3L-06

Specifications

Infineon Technologies IPP80N06S3L-06 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N06S3L-06.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
OptiMOS™
Published
2007
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
80A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
136W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
136W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.9m Ω @ 56A, 10V
Vgs(th) (Max) @ Id
2.2V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds
9417pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
196nC @ 10V
Rise Time
43ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
39 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
80A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain-source On Resistance-Max
0.0059Ohm
Drain to Source Breakdown Voltage
55V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IPP80N06S3L-06 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 9417pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 55 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).

IPP80N06S3L-06 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 55 ns

IPP80N06S3L-06 Applications
There are a lot of Infineon Technologies
IPP80N06S3L-06 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IPP80N06S3L-06 More Descriptions

MOSFET N-CH 55V 80A TO-220
Multilayer Ceramic Capacitors MLCC - SMD/SMT
Contact for details

Product Comparison

The three parts on the right have similar specifications to IPP80N06S3L-06.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
IPP80N06S3L-06

Infineon Technologies

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2007

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

260

80A

NOT SPECIFIED

3

Not Qualified

1

136W Tc

Single

ENHANCEMENT MODE

136W

N-Channel

SWITCHING

5.9m Ω @ 56A, 10V

2.2V @ 80μA

9417pF @ 25V

80A Tc

196nC @ 10V

43ns

5V 10V

±16V

39 ns

55 ns

80A

TO-220AB

16V

0.0059Ohm

55V

250 mJ

RoHS Compliant

Lead Free

-

-

-
IPP80N08S2L-07

Infineon Technologies

-

-

PG-TO220-3

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

IPP80N06S3L-06 vs IPP80N08S2L-07
IPP80N06S2L05AKSA1

Infineon Technologies

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

OptiMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

300W Tc

-

-

-

N-Channel

-

4.8mOhm @ 80A, 10V

2V @ 250μA

5.7pF @ 25V

80A Tc

230nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

PG-TO220-3-1

55V

IPP80N06S3L-06 vs IPP80N06S2L05AKSA1
IPP80N06S4L07AKSA1

Infineon Technologies

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

OptiMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

79W Tc

-

-

-

N-Channel

-

6.7mOhm @ 80A, 10V

2.2V @ 40μA

5.68pF @ 25V

80A Tc

75nC @ 10V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

PG-TO220-3-1

60V

IPP80N06S3L-06 vs IPP80N06S4L07AKSA1