Infineon Technologies IPP80N06S3-05
- Part Number:
- IPP80N06S3-05
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492124-IPP80N06S3-05
- Description:
- MOSFET N-CH 55V 80A TO-220
- Datasheet:
- IPB(I,P)80N06S3-05
Infineon Technologies IPP80N06S3-05 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N06S3-05.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating80A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max165W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation165W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5.4m Ω @ 63A, 10V
- Vgs(th) (Max) @ Id4V @ 110μA
- Input Capacitance (Ciss) (Max) @ Vds10760pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Rise Time50ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time46 ns
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0054Ohm
- Drain to Source Breakdown Voltage55V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IPP80N06S3-05 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10760pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP80N06S3-05 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 46 ns
IPP80N06S3-05 Applications
There are a lot of Infineon Technologies
IPP80N06S3-05 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10760pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP80N06S3-05 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 46 ns
IPP80N06S3-05 Applications
There are a lot of Infineon Technologies
IPP80N06S3-05 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPP80N06S3-05 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 9.0pF 50volts C0G /-0.5pF
MOSFET N-CH 55V 80A TO220-3
MOSFET N-CH 55V 80A TO220-3
The three parts on the right have similar specifications to IPP80N06S3-05.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Factory Lead TimePbfree CodeTerminal PositionJESD-30 CodeConfigurationCase ConnectionHalogen FreeMax Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Surface MountWeightTerminal FormNumber of ChannelsPolarity/Channel TypeDrain Current-Max (Abs) (ID)FET TechnologyView Compare
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IPP80N06S3-05Through HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2007e3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose Power55VMOSFET (Metal Oxide)26080ANOT SPECIFIED3Not Qualified1165W TcSingleENHANCEMENT MODE165WN-Channel5.4m Ω @ 63A, 10V4V @ 110μA10760pF @ 25V80A Tc240nC @ 10V50ns10V±20V47 ns46 ns80ATO-220AB20V0.0054Ohm55VRoHS CompliantLead Free--------------------
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-Through HoleTO-220-3---55°C~175°C TJTubeOptiMOS™--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)------300W Tc---N-Channel4.8mOhm @ 80A, 10V2V @ 250μA5.7pF @ 25V80A Tc230nC @ 10V-10V±20V-------ROHS3 Compliant-PG-TO220-3-155V-----------------
-
Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeAutomotive, AEC-Q101, OptiMOS™2008-Active1 (Unlimited)3----MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED--1150W Tc-ENHANCEMENT MODE-N-Channel5.8m Ω @ 80A, 10V4V @ 90μA4800pF @ 25V80A Tc70nC @ 10V-10V±20V--80ATO-220AB-0.0058Ohm-ROHS3 CompliantContains Lead--14 WeeksyesSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODEDRAINHalogen Free80V320A270 mJ-------
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--TO-220-3-SILICON---2009e3Obsolete1 (Unlimited)3-Tin (Sn)---NOT SPECIFIED-NOT SPECIFIED--1--ENHANCEMENT MODE-------------TO-220AB-0.0057Ohm-RoHS Compliant--60V-yesSINGLER-PSFM-T3SINGLE WITH BUILT-IN DIODEDRAIN-60V320A-NO6.000006gTHROUGH-HOLE1N-CHANNEL80AMETAL-OXIDE SEMICONDUCTOR
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