IPP80N06S3-05

Infineon Technologies IPP80N06S3-05

Part Number:
IPP80N06S3-05
Manufacturer:
Infineon Technologies
Ventron No:
2492124-IPP80N06S3-05
Description:
MOSFET N-CH 55V 80A TO-220
ECAD Model:
Datasheet:
IPB(I,P)80N06S3-05

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Specifications
Infineon Technologies IPP80N06S3-05 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP80N06S3-05.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2007
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    80A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    165W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    165W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.4m Ω @ 63A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 110μA
  • Input Capacitance (Ciss) (Max) @ Vds
    10760pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47 ns
  • Turn-Off Delay Time
    46 ns
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0054Ohm
  • Drain to Source Breakdown Voltage
    55V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IPP80N06S3-05 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10760pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 46 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IPP80N06S3-05 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 46 ns


IPP80N06S3-05 Applications
There are a lot of Infineon Technologies
IPP80N06S3-05 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPP80N06S3-05 More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 9.0pF 50volts C0G /-0.5pF
MOSFET N-CH 55V 80A TO220-3
Product Comparison
The three parts on the right have similar specifications to IPP80N06S3-05.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Factory Lead Time
    Pbfree Code
    Terminal Position
    JESD-30 Code
    Configuration
    Case Connection
    Halogen Free
    Max Dual Supply Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Surface Mount
    Weight
    Terminal Form
    Number of Channels
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    FET Technology
    View Compare
  • IPP80N06S3-05
    IPP80N06S3-05
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2007
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    260
    80A
    NOT SPECIFIED
    3
    Not Qualified
    1
    165W Tc
    Single
    ENHANCEMENT MODE
    165W
    N-Channel
    5.4m Ω @ 63A, 10V
    4V @ 110μA
    10760pF @ 25V
    80A Tc
    240nC @ 10V
    50ns
    10V
    ±20V
    47 ns
    46 ns
    80A
    TO-220AB
    20V
    0.0054Ohm
    55V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP80N06S2L05AKSA1
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~175°C TJ
    Tube
    OptiMOS™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    300W Tc
    -
    -
    -
    N-Channel
    4.8mOhm @ 80A, 10V
    2V @ 250μA
    5.7pF @ 25V
    80A Tc
    230nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    PG-TO220-3-1
    55V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP80N08S406AKSA1
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    Automotive, AEC-Q101, OptiMOS™
    2008
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    150W Tc
    -
    ENHANCEMENT MODE
    -
    N-Channel
    5.8m Ω @ 80A, 10V
    4V @ 90μA
    4800pF @ 25V
    80A Tc
    70nC @ 10V
    -
    10V
    ±20V
    -
    -
    80A
    TO-220AB
    -
    0.0058Ohm
    -
    ROHS3 Compliant
    Contains Lead
    -
    -
    14 Weeks
    yes
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    Halogen Free
    80V
    320A
    270 mJ
    -
    -
    -
    -
    -
    -
    -
  • IPP80N06S405AKSA2
    -
    -
    TO-220-3
    -
    SILICON
    -
    -
    -
    2009
    e3
    Obsolete
    1 (Unlimited)
    3
    -
    Tin (Sn)
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    1
    -
    -
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-220AB
    -
    0.0057Ohm
    -
    RoHS Compliant
    -
    -
    60V
    -
    yes
    SINGLE
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    -
    60V
    320A
    -
    NO
    6.000006g
    THROUGH-HOLE
    1
    N-CHANNEL
    80A
    METAL-OXIDE SEMICONDUCTOR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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