Infineon Technologies IPP65R310CFD
- Part Number:
- IPP65R310CFD
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586230-IPP65R310CFD
- Description:
- MOSFET N-CH 650V 11.4A TO220
- ECAD Model:
-
- Datasheet:
- IPP65R310CFD
Infineon Technologies IPP65R310CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP65R310CFD.
- Package / CaseTO-220(TO-220-3)
- PackagingTube-packed
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs310mΩ @ 4.4A,10V
- Vgs(th) (Max) @ Id4.5V @ 440uA
- Drain to Source Voltage (Vdss)650V
- Continuous Drain Current (Id) @ 25°C11.4A
- Power Dissipation-Max (Ta=25°C)104.2W
- RoHS StatusRoHS Compliant
IPP65R310CFD Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP65R310CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP65R310CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP65R310CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP65R310CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IPP65R310CFD More Descriptions
Trans MOSFET N-CH 700V 11.4A Automotive 3-Pin(3 Tab) TO-220 Tube
MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP65R310CFD Infineon Technologies
MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP65R310CFD Infineon Technologies
The three parts on the right have similar specifications to IPP65R310CFD.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusFactory Lead TimeMountMounting TypeNumber of PinsTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishVoltage - Rated DCTechnologyTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureFall Time (Typ)Input CapacitanceDrain to Source ResistanceRds On MaxECCN CodeJESD-30 CodeDrain-source On Resistance-MaxView Compare
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IPP65R310CFDTO-220(TO-220-3)Tube-packedN Channel310mΩ @ 4.4A,10V4.5V @ 440uA650V11.4A104.2WRoHS Compliant------------------------------------------------------- -
TO-220-3TubeN-Channel125m Ω @ 16A, 10V3.5V @ 1.1mA650V--ROHS3 Compliant12 WeeksThrough HoleThrough Hole3SILICON-55°C~150°C TJCoolMOS™2007e3yesNot For New Designs1 (Unlimited)3Tin (Sn)600VMOSFET (Metal Oxide)SINGLENOT SPECIFIED25ANOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE208W TcENHANCEMENT MODE208W15 nsSWITCHINGHalogen Free2500pF @ 100V25A Tc70nC @ 10V5ns10V±20V50 ns25ATO-220AB20V600V82A708 mJLead Free----------
-
TO-220-3TubeN-Channel600mOhm @ 2.4A, 10V4.5V @ 200μA600V--RoHS Compliant12 WeeksThrough HoleThrough Hole3--55°C~150°C TJCoolMOS™ P62013--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------63W Tc--11 ns-Halogen Free557pF @ 100V7.3A Tc12nC @ 10V7ns10V±20V33 ns7.3A-20V600V--Lead FreePG-TO220-3150°C-55°C14 ns557pF540mOhm600 mΩ---
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TO-220-3TubeN-Channel280m Ω @ 4.4A, 10V3.5V @ 440μA---RoHS Compliant12 WeeksThrough HoleThrough Hole-SILICON-55°C~150°C TJCoolMOS™2008-yesObsolete1 (Unlimited)3--MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE104W TcENHANCEMENT MODE104W13 nsSWITCHINGHalogen Free950pF @ 100V13.8A Tc45nC @ 10V11ns10V±20V105 ns13.8ATO-220AB20V650V39A290 mJLead Free---12 ns---EAR99R-PSFM-T30.28Ohm
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