Infineon Technologies IPP65R190C7FKSA1
- Part Number:
- IPP65R190C7FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849820-IPP65R190C7FKSA1
- Description:
- MOSFET N-CH 650V 13A TO220
- Datasheet:
- IPP65R190C7FKSA1
Infineon Technologies IPP65R190C7FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP65R190C7FKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackagePG-TO220-3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ C7
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max72W Tc
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs190mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id4V @ 290μA
- Input Capacitance (Ciss) (Max) @ Vds1150pF @ 400V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time54 ns
- Continuous Drain Current (ID)13A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage650V
- Input Capacitance1.15nF
- Drain to Source Resistance168mOhm
- Rds On Max190 mΩ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPP65R190C7FKSA1 Description
The IPP65R190C7FKSA1 is a 650V CoolMOS? C7 N-channel Power MOSFET that features a lower gate charge. According to the super-junction (SJ) concept, and invented by Infineon Technologies, this CoolMOSTM technology for high voltage IPP65R190C7FKSA1 power MOSFETs is innovative. The CoolMOSTM C7 blends high-caliber innovation with the expertise of the top SJ MOSFET provider. IPP65R190C7FKSA1 offers all the advantages of fast switching super-junction MOSFETs, including increased reliability, easier implementation, lower gate charge, and improved efficiency.
IPP65R190C7FKSA1 Features IncreasedMOSFETdv/dtruggedness
BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
BestinclassRDS(on)/package
Easytouse/drive
Pb-freeplating,halogenfreemoldcompound
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
IPP65R190C7FKSA1 Applications PFC stages and hard switching PWM stages for Computing
Industrial
Power Management
Alternative Energy
Communications & Networking
IPP65R190C7FKSA1 Features IncreasedMOSFETdv/dtruggedness
BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
BestinclassRDS(on)/package
Easytouse/drive
Pb-freeplating,halogenfreemoldcompound
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
IPP65R190C7FKSA1 Applications PFC stages and hard switching PWM stages for Computing
Industrial
Power Management
Alternative Energy
Communications & Networking
IPP65R190C7FKSA1 More Descriptions
Trans MOSFET N-CH 650V 13A 3-Pin(3 Tab) TO-220 Tube
MOSFET, N-CH, 650V, 13A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHSInfineon SCT
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
MOSFET, N-CH, 650V, 13A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHSInfineon SCT
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
The three parts on the right have similar specifications to IPP65R190C7FKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishVoltage - Rated DCTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationOperating ModePower DissipationTransistor ApplicationHalogen FreeRise TimeJEDEC-95 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)ECCN CodeJESD-30 CodeDrain-source On Resistance-MaxElement ConfigurationDrain Current-Max (Abs) (ID)HeightLengthWidthView Compare
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IPP65R190C7FKSA118 WeeksThrough HoleThrough HoleTO-220-33PG-TO220-3-55°C~150°C TJTubeCoolMOS™ C72004Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)72W Tc11 nsN-Channel190mOhm @ 5.7A, 10V4V @ 290μA1150pF @ 400V13A Tc23nC @ 10V650V10V±20V9 ns54 ns13A20V650V1.15nF168mOhm190 mΩROHS3 CompliantLead Free-------------------------------
-
12 WeeksThrough HoleThrough HoleTO-220-33--55°C~150°C TJTubeCoolMOS™2007Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)208W Tc15 nsN-Channel125m Ω @ 16A, 10V3.5V @ 1.1mA2500pF @ 100V25A Tc70nC @ 10V650V10V±20V-50 ns25A20V600V---ROHS3 CompliantLead FreeSILICONe3yes3Tin (Sn)600VSINGLENOT SPECIFIED25ANOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE208WSWITCHINGHalogen Free5nsTO-220AB82A708 mJ--------
-
12 WeeksThrough HoleThrough HoleTO-220-3---55°C~150°C TJTubeCoolMOS™2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)104W Tc13 nsN-Channel280m Ω @ 4.4A, 10V3.5V @ 440μA950pF @ 100V13.8A Tc45nC @ 10V-10V±20V12 ns105 ns13.8A20V650V---RoHS CompliantLead FreeSILICON-yes3--SINGLENOT SPECIFIED-NOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE104WSWITCHINGHalogen Free11nsTO-220AB39A290 mJEAR99R-PSFM-T30.28Ohm-----
-
16 WeeksThrough HoleThrough HoleTO-220-33--40°C~150°C TJTubeAutomotive, AEC-Q101, CoolMOS™2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)62.5W Tc9 nsN-Channel660m Ω @ 3.2A, 10V4.5V @ 200μA543pF @ 100V6A Tc20nC @ 10V-10V±20V10 ns40 ns6A20V650V---RoHS CompliantContains LeadSILICONe3no3Tin (Sn)--NOT SPECIFIED-NOT SPECIFIED--1-ENHANCEMENT MODE62.5WSWITCHINGHalogen Free8nsTO-220AB----0.66OhmSingle6A15.95mm10.36mm4.57mm
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