Infineon Technologies IPP60R190P6

Name: IPP60R190P6
Brand: Infineon Technologies
SKU: 2848862-IPP60R190P6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP60R190P6

Manufacturer:: Infineon Technologies

Ventron No:: 2848862-IPP60R190P6

Description:: MOSFET N-CH 600V 20.2A TO220

ECAD Model:

Datasheet:: IPP60R190P6

Specifications

Infineon Technologies IPP60R190P6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R190P6.

Vgs(th) (Max) @ Id:
4.5V @ 630µ
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO-220-3
Series:
CoolMOS™ P6
Rds On (Max) @ Id, Vgs:
190 mOhm @ 7.6A, 10V
Power Dissipation (Max):
151W (Tc)
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
1750pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy IPP60R190P6.

IPP60R190P6 More Descriptions

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IPP60R190P6.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Lead Free

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Height

Length

Width

View Compare
IPP60R190P6

Infineon Technologies

4.5V @ 630µ

±20V

MOSFET (Metal Oxide)

PG-TO-220-3

CoolMOS™ P6

190 mOhm @ 7.6A, 10V

151W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

1750pF @ 100V

11nC @ 10V

N-Channel

-

10V

600V

20.2A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP60R600P6XKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

12 Weeks

Through Hole

Through Hole

TO-220-3

3

PG-TO220-3

-55°C~150°C TJ

Tube

CoolMOS™ P6

2013

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

63W Tc

11 ns

N-Channel

600mOhm @ 2.4A, 10V

4.5V @ 200μA

Halogen Free

557pF @ 100V

7.3A Tc

12nC @ 10V

7ns

600V

10V

±20V

14 ns

33 ns

7.3A

20V

600V

557pF

540mOhm

600 mΩ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP60R190P6 vs IPP60R600P6XKSA1
IPP65R280E6

Infineon Technologies

3.5V @ 440µA

±20V

MOSFET (Metal Oxide)

PG-TO-220-3

CoolMOS™

280 mOhm @ 4.4A, 10V

104W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

950pF @ 100V

45nC @ 10V

N-Channel

-

10V

650V

13.8A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP60R190P6 vs IPP65R280E6
IPP65R660CFDAAKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

16 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-40°C~150°C TJ

Tube

Automotive, AEC-Q101, CoolMOS™

2008

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

62.5W Tc

9 ns

N-Channel

660m Ω @ 3.2A, 10V

4.5V @ 200μA

Halogen Free

543pF @ 100V

6A Tc

20nC @ 10V

8ns

-

10V

±20V

10 ns

40 ns

6A

20V

650V

-

-

-

RoHS Compliant

Contains Lead

SILICON

e3

no

3

Tin (Sn)

NOT SPECIFIED

NOT SPECIFIED

1

Single

ENHANCEMENT MODE

62.5W

SWITCHING

TO-220AB

6A

0.66Ohm

15.95mm

10.36mm

4.57mm

IPP60R190P6 vs IPP65R660CFDAAKSA1