Infineon Technologies IPP220N25NFDAKSA1

Name: IPP220N25NFDAKSA1
Brand: Infineon Technologies
SKU: 2479477-IPP220N25NFDAKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP220N25NFDAKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2479477-IPP220N25NFDAKSA1

Description:: MOSFET N-CH 250V 61A TO220

ECAD Model:

Datasheet:: IPP220N25NFDAKSA1

Specifications

Infineon Technologies IPP220N25NFDAKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP220N25NFDAKSA1.

Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
OptiMOS™
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
22m Ω @ 61A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
7076pF @ 125V
Current - Continuous Drain (Id) @ 25°C
61A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
61A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
250V
Drain-source On Resistance-Max
0.022Ohm
Pulsed Drain Current-Max (IDM)
244A
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPP220N25NFDAKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7076pF @ 125V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 61A amps.It is [26 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 244A.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 250V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPP220N25NFDAKSA1 Features
a continuous drain current (ID) of 61A
the turn-off delay time is 26 ns
based on its rated peak drain current 244A.

IPP220N25NFDAKSA1 Applications
There are a lot of Infineon Technologies
IPP220N25NFDAKSA1 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IPP220N25NFDAKSA1 More Descriptions

N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3
Trans MOSFET N-CH 250V 61A 3-Pin(3 Tab) TO-220 Tube
MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Source Voltage Vds:250V; On Resistance
Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 250V, 61A, 175Deg C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPP220N25NFDAKSA1
MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 61A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS FD Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 61 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter

Product Comparison

The three parts on the right have similar specifications to IPP220N25NFDAKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Surface Mount

Pbfree Code

Additional Feature

Terminal Position

Pin Count

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Rds On Max

View Compare
IPP220N25NFDAKSA1

Infineon Technologies

13 Weeks

Through Hole

Through Hole

TO-220-3

3

6.000006g

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2012

e3

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

1

300W Tc

Single

ENHANCEMENT MODE

DRAIN

14 ns

N-Channel

22m Ω @ 61A, 10V

4V @ 270μA

Halogen Free

7076pF @ 125V

61A Tc

86nC @ 10V

10ns

10V

±20V

8 ns

26 ns

61A

TO-220AB

20V

250V

0.022Ohm

244A

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP25N06S3L-22

Infineon Technologies

-

-

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

-

e3

Obsolete

1 (Unlimited)

3

-

MATTE TIN

MOSFET (Metal Oxide)

260

unknown

NOT SPECIFIED

1

-

50W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

21.6m Ω @ 17A, 10V

2.2V @ 20μA

-

2.26pF @ 25V

25A Tc

47nC @ 10V

-

5V 10V

±16V

-

-

-

TO-220AB

-

-

0.0216Ohm

100A

ROHS3 Compliant

-

NO

yes

LOGIC LEVEL COMPATIBLE

SINGLE

3

R-PSFM-T3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

55V

25A

55V

120 mJ

-

-

-

-

-

IPP220N25NFDAKSA1 vs IPP25N06S3L-22
IPP25N06S325XK

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-

-55°C~175°C TJ

Tube

OptiMOS™

2007

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

48W Tc

-

-

-

-

N-Channel

25.1mOhm @ 15A, 10V

4V @ 20μA

-

1862pF @ 25V

25A Tc

41nC @ 10V

-

10V

±20V

-

-

25A

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

55V

-

-

-

PG-TO220-3-1

175°C

-55°C

1.862nF

25.1 mΩ

IPP220N25NFDAKSA1 vs IPP25N06S325XK
IPP21N03L G

Infineon Technologies

-

-

Through Hole

TO-220-3

-

-

-

-

Tube

-

2009

-

Obsolete

3 (168 Hours)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

N-Channel

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPP220N25NFDAKSA1 vs IPP21N03L G

Certification

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IPP220N~~(2)~~
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IPP2~~(40)~~
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Part Number	Manufacturers	Description	Stock	Price
IPP220N25NFDAKSA1 DISTI #V36:1790_06377486	Infineon Technologies AG	Trans MOSFET N-CH 250V 61A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	0	500 $4.24 5000 $4.098 50000 $3.273 250000 $2.843 500000 $2.839
IPP220N25NFDAKSA1 DISTI #V99:2348_06377486	Infineon Technologies AG	Trans MOSFET N-CH 250V 61A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	0	500 $4.24 5000 $4.121 50000 $3.425 250000 $3.056 500000 $3.052
IPP220N25NFDAKSA1 DISTI #IPP220N25NFDAKSA1-ND	Infineon Technologies AG	MOSFET N-CH 250V 61A TO220 RoHS: Compliant	0	1 $6.78 10 $6.091 25 $5.7584 100 $4.9908 500 $4.24856 2500 $3.40397
IPP220N25NFDAKSA1 DISTI #IPP220N25NFDAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube - Bul RoHS: Compliant	0	132 $2.69 264 $2.59 396 $2.49 660 $2.39 1320 $2.39
IPP220N25NFDAKSA1 DISTI #IPP220N25NFDAKSA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube - Rai RoHS: Compliant	0	500 $2.79 1000 $2.69 2000 $2.59 3000 $2.49 5000 $2.39
IPP220N25NFDAKSA1 DISTI #SP001108126	Infineon Technologies AG	Trans MOSFET N-CH 250V 61A 3-Pin TO-220 Tube (Alt: RoHS: Compliant	0	1 $3.09 10 $2.79 25 $2.69 50 $2.59 100 $2.49 500 $2.39 1000 $2.29
IPP220N25NFDAKSA1 DISTI #12AC9728	Infineon Technologies AG	MOSFET, N-CH, 250V, 61A, TO-220, Transistor Polar	0	1 $6.51 10 $5.53 25 $5.29 50 $5.04 100 $4.8 250 $4.56 500 $4.08
IPP220N25NFDAKSA1 DISTI #726-IPP220N25NFDAKS1	Infineon Technologies AG	MOSFET N-Ch 250V 61A TO220-3 RoHS: Compliant	5	1 $6.45 10 $5.48 100 $4.75 250 $4.51 500 $4.04 1000 $3.41
IPP220N25NFD DISTI #726-IPP220N25NFD	Infineon Technologies AG	MOSFET N-Ch 250V 61A TO220-3 RoHS: Compliant	0	1 $6.45 10 $5.48 100 $4.75 250 $4.51 500 $4.04
IPP220N25NFDAKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 61A I(D), 250V, 0.0 RoHS: Compliant	6	1 $3.08 25 $2.86 100 $2.74 500 $2.63 1000 $2.5
IPP220N25NFDAKSA1 DISTI #2709869	Infineon Technologies AG	MOSFET, N-CH, 250V, 61A, TO-220 RoHS: Compliant	0	1 $10.22 10 $9.18 25 $8.68 100 $7.53 500 $6.41
IPP220N25NFDAKSA1 DISTI #2709869	Infineon Technologies AG	MOSFET, N-CH, 250V, 61A, TO-220	0	1 $5.52 10 $4.27 100 $3.71 250 $3.5 500 $3.14

Infineon Technologies IPP220N25NFDAKSA1

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