IPP200N15N3GXKSA1

Infineon Technologies IPP200N15N3GXKSA1

Part Number:
IPP200N15N3GXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2848839-IPP200N15N3GXKSA1
Description:
MOSFET N-CH 150V 50A TO220-3
ECAD Model:
Datasheet:
IPP200N15N3GXKSA1

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Specifications
Infineon Technologies IPP200N15N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP200N15N3GXKSA1.
  • Factory Lead Time
    13 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 90μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    1820pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    23 ns
  • Continuous Drain Current (ID)
    50A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    150V
  • Drain-source On Resistance-Max
    0.02Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPP200N15N3GXKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1820pF @ 75V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 150V.Its overall power consumption can be reduced by using drive voltage (8V 10V).

IPP200N15N3GXKSA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 23 ns
based on its rated peak drain current 200A.


IPP200N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP200N15N3GXKSA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPP200N15N3GXKSA1 More Descriptions
Single N-Channel 150 V 20 mOhm 31 nC OptiMOS™ Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(3 Tab) TO-220 Tube
INFINEON - IPP200N15N3GXKSA1 - MOSFET, N CH, 50A, 150V, PG-TO220-3
150V 50A 150W 20m´Î@10V50A 4V@90Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO220-3, RoHSInfineon SCT
MOSFET, N CH, 50A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Product Comparison
The three parts on the right have similar specifications to IPP200N15N3GXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    Reach Compliance Code
    JESD-30 Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Rds On Max
    View Compare
  • IPP200N15N3GXKSA1
    IPP200N15N3GXKSA1
    13 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    150W Tc
    ENHANCEMENT MODE
    150W
    14 ns
    N-Channel
    SWITCHING
    20m Ω @ 50A, 10V
    4V @ 90μA
    Halogen Free
    1820pF @ 75V
    50A Tc
    31nC @ 10V
    11ns
    8V 10V
    ±20V
    6 ns
    23 ns
    50A
    TO-220AB
    20V
    150V
    0.02Ohm
    200A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP230N06L3 G
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    260
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    36W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    23m Ω @ 30A, 10V
    2.2V @ 11μA
    -
    1600pF @ 30V
    30A Tc
    10nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    -
    0.023Ohm
    120A
    RoHS Compliant
    -
    NO
    LOGIC LEVEL COMPATIBLE
    compliant
    R-PSFM-T3
    60V
    30A
    60V
    13 mJ
    -
    -
    -
    -
    -
  • IPP25N06S325XK
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2007
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    48W Tc
    -
    -
    -
    N-Channel
    -
    25.1mOhm @ 15A, 10V
    4V @ 20μA
    -
    1862pF @ 25V
    25A Tc
    41nC @ 10V
    -
    10V
    ±20V
    -
    -
    25A
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    55V
    -
    -
    -
    PG-TO220-3-1
    175°C
    -55°C
    1.862nF
    25.1 mΩ
  • IPP21N03L G
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    Tube
    -
    2009
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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