Infineon Technologies IPP200N15N3GXKSA1
- Part Number:
- IPP200N15N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848839-IPP200N15N3GXKSA1
- Description:
- MOSFET N-CH 150V 50A TO220-3
- Datasheet:
- IPP200N15N3GXKSA1
Infineon Technologies IPP200N15N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP200N15N3GXKSA1.
- Factory Lead Time13 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs20m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 90μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds1820pF @ 75V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)50A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage150V
- Drain-source On Resistance-Max0.02Ohm
- Pulsed Drain Current-Max (IDM)200A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPP200N15N3GXKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1820pF @ 75V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 150V.Its overall power consumption can be reduced by using drive voltage (8V 10V).
IPP200N15N3GXKSA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 23 ns
based on its rated peak drain current 200A.
IPP200N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP200N15N3GXKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1820pF @ 75V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.A maximum pulsed drain current of 200A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 150V.Its overall power consumption can be reduced by using drive voltage (8V 10V).
IPP200N15N3GXKSA1 Features
a continuous drain current (ID) of 50A
the turn-off delay time is 23 ns
based on its rated peak drain current 200A.
IPP200N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP200N15N3GXKSA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPP200N15N3GXKSA1 More Descriptions
Single N-Channel 150 V 20 mOhm 31 nC OptiMOS Power Mosfet - TO-220-3
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(3 Tab) TO-220 Tube
INFINEON - IPP200N15N3GXKSA1 - MOSFET, N CH, 50A, 150V, PG-TO220-3
150V 50A 150W 20m´Î@10V50A 4V@90Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO220-3, RoHSInfineon SCT
MOSFET, N CH, 50A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(3 Tab) TO-220 Tube
INFINEON - IPP200N15N3GXKSA1 - MOSFET, N CH, 50A, 150V, PG-TO220-3
150V 50A 150W 20m´Î@10V50A 4V@90Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO220-3, RoHSInfineon SCT
MOSFET, N CH, 50A, 150V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 50 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 20 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
The three parts on the right have similar specifications to IPP200N15N3GXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)RoHS StatusLead FreeSurface MountAdditional FeatureReach Compliance CodeJESD-30 CodeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceRds On MaxView Compare
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IPP200N15N3GXKSA113 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowersMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODE150W14 nsN-ChannelSWITCHING20m Ω @ 50A, 10V4V @ 90μAHalogen Free1820pF @ 75V50A Tc31nC @ 10V11ns8V 10V±20V6 ns23 ns50ATO-220AB20V150V0.02Ohm200AROHS3 CompliantLead Free--------------
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--Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesObsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260NOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE36W TcENHANCEMENT MODE--N-ChannelSWITCHING23m Ω @ 30A, 10V2.2V @ 11μA-1600pF @ 30V30A Tc10nC @ 4.5V-4.5V 10V±20V---TO-220AB--0.023Ohm120ARoHS Compliant-NOLOGIC LEVEL COMPATIBLEcompliantR-PSFM-T360V30A60V13 mJ-----
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-Through HoleThrough HoleTO-220-33--55°C~175°C TJTubeOptiMOS™2007--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------48W Tc---N-Channel-25.1mOhm @ 15A, 10V4V @ 20μA-1862pF @ 25V25A Tc41nC @ 10V-10V±20V--25A-----RoHS Compliant-----55V---PG-TO220-3-1175°C-55°C1.862nF25.1 mΩ
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--Through HoleTO-220-3---Tube-2009--Obsolete3 (168 Hours)----MOSFET (Metal Oxide)-----------N-Channel---------------------------------
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