Infineon Technologies IPP200N25N3 G

Name: IPP200N25N3 G
Brand: Infineon Technologies
SKU: 2479071-IPP200N25N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP200N25N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479071-IPP200N25N3 G

Description:: MOSFET N-CH 250V 64A TO220-3

ECAD Model:

Datasheet:: IPP200N25N3 G

Specifications

Infineon Technologies IPP200N25N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP200N25N3 G.

Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
64A
Drain-source On Resistance-Max
0.02Ohm
Pulsed Drain Current-Max (IDM)
256A
DS Breakdown Voltage-Min
250V
Avalanche Energy Rating (Eas)
320 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPP200N25N3 G Description
The IPP200N25N3 G is an N-channel Power MOSFET produced based on OptiMOS? leading benchmark technology. The Infineon IPP200N25N3 G is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IPP200N25N3 G is in the TO-220-3 package with 300W power dissipation.

IPP200N25N3 G Features
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
175 ??C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for a target application

IPP200N25N3 G Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C110V systems
Isolated DC-DC converters
Lighting for 110V AC networks
HID lamps
Class D audio amplifiers
Uninterruptable power supplies (UPS)

IPP200N25N3 G More Descriptions

Trans MOSFET N-CH 250V 64A 3-Pin(3 Tab) TO-220 Tube
MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3
French Electronic Distributor since 1988
MOSFET, N-CH, 250V, 64A, TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 175°C

Product Comparison

The three parts on the right have similar specifications to IPP200N25N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

Pbfree Code

ECCN Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Additional Feature

Subcategory

View Compare
IPP200N25N3 G

Infineon Technologies

NO

3

SILICON

icon-pbfree yes

EAR99

SINGLE

THROUGH-HOLE

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

TO-220AB

64A

0.02Ohm

256A

250V

320 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP260N06N3GXKSA1

Infineon Technologies

NO

-

SILICON

yes

EAR99

SINGLE

-

260

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

27A

0.026Ohm

108A

60V

13 mJ

-

-

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

36W Tc

N-Channel

26m Ω @ 27A, 10V

4V @ 11μA

1200pF @ 30V

27A Tc

15nC @ 10V

60V

10V

±20V

-

-

IPP200N25N3 G vs IPP260N06N3GXKSA1
IPP230N06L3 G

Infineon Technologies

NO

-

SILICON

yes

EAR99

SINGLE

-

260

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

30A

0.023Ohm

120A

60V

13 mJ

-

RoHS Compliant

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

MATTE TIN

MOSFET (Metal Oxide)

36W Tc

N-Channel

23m Ω @ 30A, 10V

2.2V @ 11μA

1600pF @ 30V

30A Tc

10nC @ 4.5V

60V

4.5V 10V

±20V

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

IPP200N25N3 G vs IPP230N06L3 G
IPP21N03L G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-220-3

-

Tube

-

2009

-

Obsolete

3 (168 Hours)

-

-

MOSFET (Metal Oxide)

-

N-Channel

-

-

-

-

-

-

-

-

-

-

IPP200N25N3 G vs IPP21N03L G