Infineon Technologies IPP111N15N3 G

Name: IPP111N15N3 G
Brand: Infineon Technologies
SKU: 2478987-IPP111N15N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP111N15N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2478987-IPP111N15N3 G

Description:: MOSFET N-CH 150V 83A TO220-3

ECAD Model:

Datasheet:: IPP111N15N3 G

Specifications

Infineon Technologies IPP111N15N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP111N15N3 G.

Package / Case
PG-TO220-3
Packaging
Tube-packed
RoHS Status
RoHS Compliant

Description

IPP111N15N3 G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPP111N15N3 G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPP111N15N3 G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPP111N15N3 G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Supplier Device Package

Operating Temperature

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IPP111N15N3 G

Infineon Technologies

PG-TO220-3

Tube-packed

RoHS Compliant

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IPP100N04S204AKSA2

Infineon Technologies

TO-220-3

Tube

ROHS3 Compliant

Through Hole

PG-TO220-3-1

-55°C~175°C TJ

OptiMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

300W Tc

N-Channel

3.6mOhm @ 80A, 10V

4V @ 250μA

5.3pF @ 25V

100A Tc

172nC @ 10V

40V

10V

±20V

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IPP111N15N3 G vs IPP100N04S204AKSA2
IPP10N03LB G

Infineon Technologies

TO-220-3

Tube

RoHS Compliant

Through Hole

-

-55°C~175°C TJ

OptiMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

58W Tc

N-Channel

9.9m Ω @ 50A, 10V

2V @ 20μA

1639pF @ 15V

50A Tc

13nC @ 5V

30V

4.5V 10V

±20V

NO

SILICON

2008

e3

3

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

TO-220AB

50A

0.0099Ohm

200A

30V

57 mJ

IPP111N15N3 G vs IPP10N03LB G
IPP100N06S205AKSA1

Infineon Technologies

TO-220-3

Tube

Non-RoHS Compliant

Through Hole

PG-TO220-3-1

-55°C~175°C TJ

OptiMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

300W Tc

N-Channel

5mOhm @ 80A, 10V

4V @ 250μA

5.11pF @ 25V

100A Tc

170nC @ 10V

55V

10V

±20V

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IPP111N15N3 G vs IPP100N06S205AKSA1