Infineon Technologies IPP075N15N3GHKSA1
- Part Number:
- IPP075N15N3GHKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587060-IPP075N15N3GHKSA1
- Description:
- MOSFET N-CH 150V 100A TO220-3
- Datasheet:
- IPP075N15N3GHKSA1
Infineon Technologies IPP075N15N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP075N15N3GHKSA1.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackagePG-TO220-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max300W Tc
- Power Dissipation300W
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 270μA
- Input Capacitance (Ciss) (Max) @ Vds5470pF @ 75V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Rise Time35ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time46 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Input Capacitance5.47nF
- Drain to Source Resistance7.2mOhm
- Rds On Max7.5 mΩ
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IPP075N15N3GHKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5470pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 46 ns.This device has a drain-to-source resistance of 7.2mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.
IPP075N15N3GHKSA1 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 46 ns
single MOSFETs transistor is 7.2mOhm
a 150V drain to source voltage (Vdss)
IPP075N15N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP075N15N3GHKSA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5470pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 46 ns.This device has a drain-to-source resistance of 7.2mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.
IPP075N15N3GHKSA1 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 46 ns
single MOSFETs transistor is 7.2mOhm
a 150V drain to source voltage (Vdss)
IPP075N15N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP075N15N3GHKSA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP075N15N3GHKSA1 More Descriptions
Trans MOSFET N-CH 150V 100A 3-Pin(3 Tab) TO-220
Compliant Through Hole 14 ns 35 ns 7.5 mΩ TO-220-3 5.47 nF 300 W
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Compliant Through Hole 14 ns 35 ns 7.5 mΩ TO-220-3 5.47 nF 300 W
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to IPP075N15N3GHKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Pbfree CodeView Compare
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IPP075N15N3GHKSA18 WeeksThrough HoleThrough HoleTO-220-3PG-TO220-3-55°C~175°C TJTubeOptiMOS™2011Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1300W Tc300W25 nsN-Channel7.5mOhm @ 100A, 10V4V @ 270μA5470pF @ 75V100A Tc93nC @ 10V35ns150V8V 10V±20V14 ns46 ns100A20V150V5.47nF7.2mOhm7.5 mΩNoRoHS Compliant--------------------------
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--Through HoleTO-220-3--55°C~175°C TJTubeOptiMOS™2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1300W Tc--N-Channel5.1m Ω @ 100A, 10V2.4V @ 250μA15600pF @ 50V100A Tc163nC @ 10V-100V4.5V 10V±20V---------RoHS CompliantNOSILICONe33EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerSINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGTO-220AB100A0.0051Ohm400A100V826 mJ-
-
--Through HoleTO-220-3--55°C~175°C TJTubeOptiMOS™2008Obsolete3 (168 Hours)--MOSFET (Metal Oxide)1300W Tc--N-Channel5.4m Ω @ 100A, 10V4V @ 250μA12100pF @ 40V100A Tc180nC @ 10V-85V10V±20V----------NOSILICON-3EAR99---SINGLE-compliant--R-PSFM-T3-SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGTO-220AB100A0.0054Ohm400A85V826 mJ-
-
13 Weeks-Through HoleTO-220-3--55°C~175°C TJTubeOptiMOS™2008Active1 (Unlimited)--MOSFET (Metal Oxide)1250W Tc--N-Channel1.5m Ω @ 100A, 10V4V @ 200μA20000pF @ 20V120A Tc250nC @ 10V-40V10V±20V---------ROHS3 CompliantNOSILICONe33EAR99Tin (Sn)-FET General Purpose PowerSINGLENOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGTO-220AB120A0.0015Ohm400A40V865 mJyes
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