IPP075N15N3GHKSA1

Infineon Technologies IPP075N15N3GHKSA1

Part Number:
IPP075N15N3GHKSA1
Manufacturer:
Infineon Technologies
Ventron No:
3587060-IPP075N15N3GHKSA1
Description:
MOSFET N-CH 150V 100A TO220-3
ECAD Model:
Datasheet:
IPP075N15N3GHKSA1

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Specifications
Infineon Technologies IPP075N15N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP075N15N3GHKSA1.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    PG-TO220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Power Dissipation
    300W
  • Turn On Delay Time
    25 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 270μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5470pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    46 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Input Capacitance
    5.47nF
  • Drain to Source Resistance
    7.2mOhm
  • Rds On Max
    7.5 mΩ
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IPP075N15N3GHKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5470pF @ 75V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 46 ns.This device has a drain-to-source resistance of 7.2mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (8V 10V), this device contributes to a reduction in overall power consumption.

IPP075N15N3GHKSA1 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 46 ns
single MOSFETs transistor is 7.2mOhm
a 150V drain to source voltage (Vdss)


IPP075N15N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP075N15N3GHKSA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP075N15N3GHKSA1 More Descriptions
Trans MOSFET N-CH 150V 100A 3-Pin(3 Tab) TO-220
Compliant Through Hole 14 ns 35 ns 7.5 mΩ TO-220-3 5.47 nF 300 W
Power Field-Effect Transistor, 100A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to IPP075N15N3GHKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Pbfree Code
    View Compare
  • IPP075N15N3GHKSA1
    IPP075N15N3GHKSA1
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    PG-TO220-3
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2011
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    300W Tc
    300W
    25 ns
    N-Channel
    7.5mOhm @ 100A, 10V
    4V @ 270μA
    5470pF @ 75V
    100A Tc
    93nC @ 10V
    35ns
    150V
    8V 10V
    ±20V
    14 ns
    46 ns
    100A
    20V
    150V
    5.47nF
    7.2mOhm
    7.5 mΩ
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP05CN10L G
    -
    -
    Through Hole
    TO-220-3
    -
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    300W Tc
    -
    -
    N-Channel
    5.1m Ω @ 100A, 10V
    2.4V @ 250μA
    15600pF @ 50V
    100A Tc
    163nC @ 10V
    -
    100V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    NO
    SILICON
    e3
    3
    EAR99
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    SINGLE
    260
    compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    TO-220AB
    100A
    0.0051Ohm
    400A
    100V
    826 mJ
    -
  • IPP054NE8NGHKSA2
    -
    -
    Through Hole
    TO-220-3
    -
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Obsolete
    3 (168 Hours)
    -
    -
    MOSFET (Metal Oxide)
    1
    300W Tc
    -
    -
    N-Channel
    5.4m Ω @ 100A, 10V
    4V @ 250μA
    12100pF @ 40V
    100A Tc
    180nC @ 10V
    -
    85V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    SILICON
    -
    3
    EAR99
    -
    -
    -
    SINGLE
    -
    compliant
    -
    -
    R-PSFM-T3
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    TO-220AB
    100A
    0.0054Ohm
    400A
    85V
    826 mJ
    -
  • IPP015N04NGXKSA1
    13 Weeks
    -
    Through Hole
    TO-220-3
    -
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    250W Tc
    -
    -
    N-Channel
    1.5m Ω @ 100A, 10V
    4V @ 200μA
    20000pF @ 20V
    120A Tc
    250nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    NO
    SILICON
    e3
    3
    EAR99
    Tin (Sn)
    -
    FET General Purpose Power
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    TO-220AB
    120A
    0.0015Ohm
    400A
    40V
    865 mJ
    yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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