Infineon Technologies IPP070N08N3 G

IPP070N08N3 G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3840pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 80V in order to maintain normal operation.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.

IPP070N08N3 G Features
the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 320A.
a 80V drain to source voltage (Vdss)


IPP070N08N3 G Applications
There are a lot of Infineon Technologies
IPP070N08N3 G applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools