Infineon Technologies IPP05N03LB G
- Part Number:
- IPP05N03LB G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853461-IPP05N03LB G
- Description:
- MOSFET N-CH 30V 80A TO-220
- Datasheet:
- IPP05N03LB G
Infineon Technologies IPP05N03LB G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP05N03LB G.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max94W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.3m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id2V @ 40μA
- Input Capacitance (Ciss) (Max) @ Vds3209pF @ 15V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0053Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)136 mJ
- RoHS StatusRoHS Compliant
IPP05N03LB G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 136 mJ.A device's maximum input capacitance is 3209pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPP05N03LB G Features
the avalanche energy rating (Eas) is 136 mJ
based on its rated peak drain current 320A.
a 30V drain to source voltage (Vdss)
IPP05N03LB G Applications
There are a lot of Infineon Technologies
IPP05N03LB G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 136 mJ.A device's maximum input capacitance is 3209pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 30V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPP05N03LB G Features
the avalanche energy rating (Eas) is 136 mJ
based on its rated peak drain current 320A.
a 30V drain to source voltage (Vdss)
IPP05N03LB G Applications
There are a lot of Infineon Technologies
IPP05N03LB G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
The three parts on the right have similar specifications to IPP05N03LB G.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFactory Lead TimePbfree CodeNumber of PinsTurn On Delay TimeHalogen FreeMax Dual Supply VoltageREACH SVHCLead FreeView Compare
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IPP05N03LB GThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260compliantNOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE94W TcENHANCEMENT MODEN-ChannelSWITCHING5.3m Ω @ 60A, 10V2V @ 40μA3209pF @ 15V80A Tc25nC @ 5V30V4.5V 10V±20VTO-220AB80A0.0053Ohm320A30V136 mJRoHS Compliant--------------------
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Through HoleTO-220-3-SILICON-55°C~175°C TJTape & Box (TB)OptiMOS™2003e3Obsolete1 (Unlimited)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1-150W TcENHANCEMENT MODEN-ChannelSWITCHING3m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V-4.5V 10V±20VTO-220AB-0.0044Ohm385A-960 mJRoHS CompliantThrough Hole25V80ASingle150W8.5ns7.5 ns45 ns80A20V25V--------
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Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeOptiMOS™2008e3Active1 (Unlimited)3EAR99Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODEN-ChannelSWITCHING1.5m Ω @ 100A, 10V4V @ 200μA20000pF @ 20V120A Tc250nC @ 10V40V10V±20VTO-220AB120A0.0015Ohm400A40V865 mJROHS3 Compliant-----------13 Weeksyes------
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Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008e3Active1 (Unlimited)3EAR99Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)SINGLENOT SPECIFIED-NOT SPECIFIED3-Not Qualified1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODEN-ChannelSWITCHING9.3m Ω @ 50A, 10V4V @ 34μA2900pF @ 30V50A Tc36nC @ 10V-10V±20VTO-220AB--200A--ROHS3 CompliantThrough Hole---71W40ns5 ns20 ns50A20V-13 Weeksyes315 nsHalogen Free60VNo SVHCLead Free
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