Infineon Technologies IPP057N08N3GXKSA1
- Part Number:
- IPP057N08N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484287-IPP057N08N3GXKSA1
- Description:
- MOSFET N-CH 80V 80A TO220-3
- ECAD Model:
-
- Datasheet:
- IPP057N08N3GXKSA1
Infineon Technologies IPP057N08N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP057N08N3GXKSA1.
- Factory Lead Time13 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.7m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id3.5V @ 90μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds4750pF @ 40V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
- Rise Time66ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage80V
- Drain-source On Resistance-Max0.0057Ohm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPP057N08N3GXKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4750pF @ 40V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
IPP057N08N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 38 ns
IPP057N08N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP057N08N3GXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4750pF @ 40V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 80V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
IPP057N08N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 38 ns
IPP057N08N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP057N08N3GXKSA1 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IPP057N08N3GXKSA1 More Descriptions
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Dr
Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS Power Mosfet - TO-220-3
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3 Tab) TO-220 Tube
INFINEON - IPP057N08N3GXKSA1 - MOSFET, N CH, 80A, 80V, PG-TO220-3
Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to 175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS Power Mosfet - TO-220-3
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3 Tab) TO-220 Tube
INFINEON - IPP057N08N3GXKSA1 - MOSFET, N CH, 80A, 80V, PG-TO220-3
Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to 175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
The three parts on the right have similar specifications to IPP057N08N3GXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxRoHS StatusLead FreeSurface MountReach Compliance CodeJESD-30 CodeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Additional FeatureSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationDrain to Source Breakdown VoltageView Compare
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IPP057N08N3GXKSA113 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODE150W18 nsN-ChannelSWITCHING5.7m Ω @ 80A, 10V3.5V @ 90μAHalogen Free4750pF @ 40V80A Tc69nC @ 10V66ns6V 10V±20V10 ns38 ns80ATO-220AB20V80V0.0057OhmROHS3 CompliantLead Free--------------- -
--Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008--Obsolete3 (168 Hours)3EAR99-MOSFET (Metal Oxide)SINGLE----1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE--N-ChannelSWITCHING5.4m Ω @ 100A, 10V4V @ 250μA-12100pF @ 40V100A Tc180nC @ 10V-10V±20V---TO-220AB--0.0054Ohm--NOcompliantR-PSFM-T385V100A400A85V826 mJ------
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-Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2003e3-Obsolete1 (Unlimited)3EAR99MATTE TINMOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED3Not Qualified1-107W TcENHANCEMENT MODE107W-N-ChannelSWITCHING4.2m Ω @ 55A, 10V2V @ 60μA-3877pF @ 15V80A Tc32nC @ 5V4.5ns4.5V 10V±20V5.4 ns38 ns80ATO-220AB20V-0.0067OhmRoHS CompliantContains Lead--R-PSFM-T3--385A-290 mJLOGIC LEVEL COMPATIBLEFET General Purpose Power25V80ASingle25V
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13 Weeks-Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODE--N-ChannelSWITCHING1.5m Ω @ 100A, 10V4V @ 200μA-20000pF @ 20V120A Tc250nC @ 10V-10V±20V---TO-220AB--0.0015OhmROHS3 Compliant-NO-R-PSFM-T340V120A400A40V865 mJ-FET General Purpose Power----
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