Infineon Technologies IPP057N08N3GHKSA1
- Part Number:
- IPP057N08N3GHKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587021-IPP057N08N3GHKSA1
- Description:
- MOSFET N-CH 80V 80A TO220-3
- Datasheet:
- IPP057N08N3GHKSA1
Infineon Technologies IPP057N08N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP057N08N3GHKSA1.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.7m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id3.5V @ 90μA
- Input Capacitance (Ciss) (Max) @ Vds4750pF @ 40V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
- Rise Time66ns
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0057Ohm
- Drain to Source Breakdown Voltage80V
- Pulsed Drain Current-Max (IDM)320A
- RoHS StatusRoHS Compliant
IPP057N08N3GHKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4750pF @ 40V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 320A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
IPP057N08N3GHKSA1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 320A.
IPP057N08N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP057N08N3GHKSA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4750pF @ 40V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 320A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
IPP057N08N3GHKSA1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 320A.
IPP057N08N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP057N08N3GHKSA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP057N08N3GHKSA1 More Descriptions
Trans MOSFET N-CH 80V 80A 3-Pin(3 Tab) TO-220
MOSFET N-Ch 80V 80A TO220-3
MOSFET N-Ch 80V 80A TO220-3
The three parts on the right have similar specifications to IPP057N08N3GHKSA1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusSurface MountReach Compliance CodeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of PinsAdditional FeatureHalogen FreeMax Dual Supply VoltageREACH SVHCLead FreeView Compare
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IPP057N08N3GHKSA1Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeOptiMOS™2011Obsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)SINGLER-PSFM-T31SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODE150W18 nsN-ChannelSWITCHING5.7m Ω @ 80A, 10V3.5V @ 90μA4750pF @ 40V80A Tc69nC @ 10V66ns6V 10V±20V10 ns38 ns80ATO-220AB20V0.0057Ohm80V320ARoHS Compliant---------------------
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-Through HoleTO-220-3SILICON-55°C~175°C TJTubeOptiMOS™2008Obsolete3 (168 Hours)3EAR99-MOSFET (Metal Oxide)SINGLER-PSFM-T31SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE--N-ChannelSWITCHING5.4m Ω @ 100A, 10V4V @ 250μA12100pF @ 40V100A Tc180nC @ 10V-10V±20V---TO-220AB-0.0054Ohm-400A-NOcompliant85V100A85V826 mJ--------------
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-Through HoleTO-220-3SILICON-55°C~175°C TJTubeOptiMOS™2008Active1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)SINGLER-PSFM-T31SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODE--N-ChannelSWITCHING1.5m Ω @ 100A, 10V4V @ 200μA20000pF @ 20V120A Tc250nC @ 10V-10V±20V---TO-220AB-0.0015Ohm-400AROHS3 CompliantNO-40V120A40V865 mJ13 Weekse3yesTin (Sn)NOT SPECIFIEDNOT SPECIFIED3Not Qualified------
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Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeOptiMOS™2008Active1 (Unlimited)3EAR99-MOSFET (Metal Oxide)SINGLE-1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODE71W15 nsN-ChannelSWITCHING9.3m Ω @ 50A, 10V4V @ 34μA2900pF @ 30V50A Tc36nC @ 10V40ns10V±20V5 ns20 ns50ATO-220AB20V--200AROHS3 Compliant------13 Weekse3yesTin (Sn)NOT SPECIFIEDNOT SPECIFIED3Not Qualified3AVALANCHE RATEDHalogen Free60VNo SVHCLead Free
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