IPP057N08N3GHKSA1

Infineon Technologies IPP057N08N3GHKSA1

Part Number:
IPP057N08N3GHKSA1
Manufacturer:
Infineon Technologies
Ventron No:
3587021-IPP057N08N3GHKSA1
Description:
MOSFET N-CH 80V 80A TO220-3
ECAD Model:
Datasheet:
IPP057N08N3GHKSA1

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Specifications
Infineon Technologies IPP057N08N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP057N08N3GHKSA1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.7m Ω @ 80A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 90μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4750pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    69nC @ 10V
  • Rise Time
    66ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0057Ohm
  • Drain to Source Breakdown Voltage
    80V
  • Pulsed Drain Current-Max (IDM)
    320A
  • RoHS Status
    RoHS Compliant
Description
IPP057N08N3GHKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4750pF @ 40V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 320A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

IPP057N08N3GHKSA1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 320A.


IPP057N08N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP057N08N3GHKSA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP057N08N3GHKSA1 More Descriptions
Trans MOSFET N-CH 80V 80A 3-Pin(3 Tab) TO-220
MOSFET N-Ch 80V 80A TO220-3
Product Comparison
The three parts on the right have similar specifications to IPP057N08N3GHKSA1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Surface Mount
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Pins
    Additional Feature
    Halogen Free
    Max Dual Supply Voltage
    REACH SVHC
    Lead Free
    View Compare
  • IPP057N08N3GHKSA1
    IPP057N08N3GHKSA1
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2011
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    150W Tc
    ENHANCEMENT MODE
    150W
    18 ns
    N-Channel
    SWITCHING
    5.7m Ω @ 80A, 10V
    3.5V @ 90μA
    4750pF @ 40V
    80A Tc
    69nC @ 10V
    66ns
    6V 10V
    ±20V
    10 ns
    38 ns
    80A
    TO-220AB
    20V
    0.0057Ohm
    80V
    320A
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP054NE8NGHKSA2
    -
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Obsolete
    3 (168 Hours)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    5.4m Ω @ 100A, 10V
    4V @ 250μA
    12100pF @ 40V
    100A Tc
    180nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    0.0054Ohm
    -
    400A
    -
    NO
    compliant
    85V
    100A
    85V
    826 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP015N04NGXKSA1
    -
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    250W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.5m Ω @ 100A, 10V
    4V @ 200μA
    20000pF @ 20V
    120A Tc
    250nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    0.0015Ohm
    -
    400A
    ROHS3 Compliant
    NO
    -
    40V
    120A
    40V
    865 mJ
    13 Weeks
    e3
    yes
    Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    -
    -
    -
    -
    -
    -
  • IPP093N06N3GXKSA1
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    1
    SINGLE WITH BUILT-IN DIODE
    71W Tc
    ENHANCEMENT MODE
    71W
    15 ns
    N-Channel
    SWITCHING
    9.3m Ω @ 50A, 10V
    4V @ 34μA
    2900pF @ 30V
    50A Tc
    36nC @ 10V
    40ns
    10V
    ±20V
    5 ns
    20 ns
    50A
    TO-220AB
    20V
    -
    -
    200A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    13 Weeks
    e3
    yes
    Tin (Sn)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    3
    AVALANCHE RATED
    Halogen Free
    60V
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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