IPP052NE7N3GXKSA1

Infineon Technologies IPP052NE7N3GXKSA1

Part Number:
IPP052NE7N3GXKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2479391-IPP052NE7N3GXKSA1
Description:
MOSFET N-CH 75V 80A TO220-3
ECAD Model:
Datasheet:
IPP,IPI052NE7N3 G

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Specifications
Infineon Technologies IPP052NE7N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP052NE7N3GXKSA1.
  • Factory Lead Time
    13 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    OptiMOS™
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.2m Ω @ 80A, 10V
  • Vgs(th) (Max) @ Id
    3.8V @ 91μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    4750pF @ 37.5V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    75V
  • Drain-source On Resistance-Max
    0.0052Ohm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPP052NE7N3GXKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4750pF @ 37.5V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 75V.Using drive voltage (10V) reduces this device's overall power consumption.

IPP052NE7N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 30 ns


IPP052NE7N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP052NE7N3GXKSA1 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPP052NE7N3GXKSA1 More Descriptions
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3 Tab) TO-220 Tube / OptiMOS3 Power-Transistor
Single N-Channel 75 V 5.2 mOhm 51 nC OptiMOS™ Power Mosfet - TO-220-3
MOSFET, N CH, 75V, 80A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; P
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 5.2 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Product Comparison
The three parts on the right have similar specifications to IPP052NE7N3GXKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    RoHS Status
    Lead Free
    Surface Mount
    Reach Compliance Code
    JESD-30 Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Drain to Source Breakdown Voltage
    REACH SVHC
    View Compare
  • IPP052NE7N3GXKSA1
    IPP052NE7N3GXKSA1
    13 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    150W Tc
    ENHANCEMENT MODE
    150W
    14 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 80A, 10V
    3.8V @ 91μA
    Halogen Free
    4750pF @ 37.5V
    80A Tc
    68nC @ 10V
    11ns
    10V
    ±20V
    8 ns
    30 ns
    80A
    TO-220AB
    20V
    75V
    0.0052Ohm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP054NE8NGHKSA2
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    -
    -
    Obsolete
    3 (168 Hours)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    -
    -
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    5.4m Ω @ 100A, 10V
    4V @ 250μA
    -
    12100pF @ 40V
    100A Tc
    180nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    -
    0.0054Ohm
    -
    -
    NO
    compliant
    R-PSFM-T3
    85V
    100A
    400A
    85V
    826 mJ
    -
    -
    -
    -
    -
    -
    -
  • IPP03N03LA
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tape & Box (TB)
    OptiMOS™
    2003
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    -
    150W Tc
    ENHANCEMENT MODE
    150W
    -
    N-Channel
    SWITCHING
    3m Ω @ 55A, 10V
    2V @ 100μA
    -
    7027pF @ 15V
    80A Tc
    57nC @ 5V
    8.5ns
    4.5V 10V
    ±20V
    7.5 ns
    45 ns
    80A
    TO-220AB
    20V
    -
    0.0044Ohm
    RoHS Compliant
    -
    -
    -
    R-PSFM-T3
    -
    -
    385A
    -
    960 mJ
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    25V
    80A
    Single
    25V
    -
  • IPP093N06N3GXKSA1
    13 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    OptiMOS™
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    71W Tc
    ENHANCEMENT MODE
    71W
    15 ns
    N-Channel
    SWITCHING
    9.3m Ω @ 50A, 10V
    4V @ 34μA
    Halogen Free
    2900pF @ 30V
    50A Tc
    36nC @ 10V
    40ns
    10V
    ±20V
    5 ns
    20 ns
    50A
    TO-220AB
    20V
    60V
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    200A
    -
    -
    AVALANCHE RATED
    -
    -
    -
    -
    -
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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