Infineon Technologies IPP052NE7N3GXKSA1
- Part Number:
- IPP052NE7N3GXKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479391-IPP052NE7N3GXKSA1
- Description:
- MOSFET N-CH 75V 80A TO220-3
- Datasheet:
- IPP,IPI052NE7N3 G
Infineon Technologies IPP052NE7N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP052NE7N3GXKSA1.
- Factory Lead Time13 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation150W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.2m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id3.8V @ 91μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds4750pF @ 37.5V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Rise Time11ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)80A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage75V
- Drain-source On Resistance-Max0.0052Ohm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPP052NE7N3GXKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4750pF @ 37.5V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 75V.Using drive voltage (10V) reduces this device's overall power consumption.
IPP052NE7N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 30 ns
IPP052NE7N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP052NE7N3GXKSA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4750pF @ 37.5V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 75V.Using drive voltage (10V) reduces this device's overall power consumption.
IPP052NE7N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 30 ns
IPP052NE7N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP052NE7N3GXKSA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPP052NE7N3GXKSA1 More Descriptions
Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3 Tab) TO-220 Tube / OptiMOS3 Power-Transistor
Single N-Channel 75 V 5.2 mOhm 51 nC OptiMOS Power Mosfet - TO-220-3
MOSFET, N CH, 75V, 80A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; P
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 5.2 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
Single N-Channel 75 V 5.2 mOhm 51 nC OptiMOS Power Mosfet - TO-220-3
MOSFET, N CH, 75V, 80A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; P
Power Field-Effect Transistor, 80A I(D), 75V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 5.2 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
The three parts on the right have similar specifications to IPP052NE7N3GXKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxRoHS StatusLead FreeSurface MountReach Compliance CodeJESD-30 CodeDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Additional FeatureSubcategoryVoltage - Rated DCCurrent RatingElement ConfigurationDrain to Source Breakdown VoltageREACH SVHCView Compare
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IPP052NE7N3GXKSA113 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2011e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODE150W14 nsN-ChannelSWITCHING5.2m Ω @ 80A, 10V3.8V @ 91μAHalogen Free4750pF @ 37.5V80A Tc68nC @ 10V11ns10V±20V8 ns30 ns80ATO-220AB20V75V0.0052OhmROHS3 CompliantLead Free----------------
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--Through HoleTO-220-3-SILICON-55°C~175°C TJTubeOptiMOS™2008--Obsolete3 (168 Hours)3EAR99-MOSFET (Metal Oxide)SINGLE----1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE--N-ChannelSWITCHING5.4m Ω @ 100A, 10V4V @ 250μA-12100pF @ 40V100A Tc180nC @ 10V-10V±20V---TO-220AB--0.0054Ohm--NOcompliantR-PSFM-T385V100A400A85V826 mJ-------
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-Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTape & Box (TB)OptiMOS™2003e3-Obsolete1 (Unlimited)3EAR99MATTE TINMOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED3Not Qualified1-150W TcENHANCEMENT MODE150W-N-ChannelSWITCHING3m Ω @ 55A, 10V2V @ 100μA-7027pF @ 15V80A Tc57nC @ 5V8.5ns4.5V 10V±20V7.5 ns45 ns80ATO-220AB20V-0.0044OhmRoHS Compliant---R-PSFM-T3--385A-960 mJLOGIC LEVEL COMPATIBLEFET General Purpose Power25V80ASingle25V-
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13 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeOptiMOS™2008e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED3Not Qualified1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODE71W15 nsN-ChannelSWITCHING9.3m Ω @ 50A, 10V4V @ 34μAHalogen Free2900pF @ 30V50A Tc36nC @ 10V40ns10V±20V5 ns20 ns50ATO-220AB20V60V-ROHS3 CompliantLead Free-----200A--AVALANCHE RATED-----No SVHC
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