Infineon Technologies IPP041N12N3 G

Name: IPP041N12N3 G
Brand: Infineon Technologies
SKU: 2479096-IPP041N12N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP041N12N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479096-IPP041N12N3 G

Description:: MOSFET N-CH 120V 120A TO220-3

ECAD Model:

Datasheet:: IPP041N12N3 G

Specifications

Infineon Technologies IPP041N12N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP041N12N3 G.

Surface Mount
NO
Number of Terminals
3
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
120A
Drain-source On Resistance-Max
0.0041Ohm
Pulsed Drain Current-Max (IDM)
480A
DS Breakdown Voltage-Min
120V
Avalanche Energy Rating (Eas)
900 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPP041N12N3 G Description
The IPP041N12N3 G is an OptiMOS? N-channel Power MOSFET offering at the same time the lowest ON-state resistance in the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS? IPP041N12N3 G gives new possibilities for optimized solutions. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPP041N12N3 G is in the TO-220-3 package with 300W power dissipation.

IPP041N12N3 G Features
Excellent gate charge x RDS (ON) product (FOM)
Very low ON-resistance RDS(on)
Excellent gate charge x RDS (ON) product (FOM)
MSL1 rated 2
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption

IPP041N12N3 G Applications
Power Management
Motor Drive & Control
Computers & Computer Peripherals
Portable Devices
LED Lighting

Product Comparison

The three parts on the right have similar specifications to IPP041N12N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Power Dissipation-Max

Element Configuration

Power Dissipation

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Drain to Source Voltage (Vdss)

View Compare
IPP041N12N3 G

Infineon Technologies

NO

3

SILICON

e3

icon-pbfree yes

EAR99

Tin (Sn)

SINGLE

THROUGH-HOLE

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

N-CHANNEL

TO-220AB

120A

0.0041Ohm

480A

120V

900 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP04N03LA

Infineon Technologies

-

-

SILICON

e3

-

EAR99

MATTE TIN

-

-

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

-

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

-

0.0067Ohm

385A

-

290 mJ

-

RoHS Compliant

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

OptiMOS™

2003

Obsolete

1 (Unlimited)

3

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

25V

MOSFET (Metal Oxide)

80A

107W Tc

Single

107W

N-Channel

4.2m Ω @ 55A, 10V

2V @ 60μA

3877pF @ 15V

80A Tc

32nC @ 5V

4.5ns

4.5V 10V

±20V

5.4 ns

38 ns

80A

20V

25V

Contains Lead

-

IPP041N12N3 G vs IPP04N03LA
IPP05N03LB G

Infineon Technologies

NO

-

SILICON

e3

-

EAR99

MATTE TIN

SINGLE

-

260

compliant

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

80A

0.0053Ohm

320A

30V

136 mJ

-

RoHS Compliant

-

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

OptiMOS™

2008

Obsolete

1 (Unlimited)

3

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

94W Tc

-

-

N-Channel

5.3m Ω @ 60A, 10V

2V @ 40μA

3209pF @ 15V

80A Tc

25nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

-

-

30V

IPP041N12N3 G vs IPP05N03LB G
IPP03N03LA

Infineon Technologies

-

-

SILICON

e3

-

EAR99

MATTE TIN

-

-

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

-

1

-

ENHANCEMENT MODE

SWITCHING

-

TO-220AB

-

0.0044Ohm

385A

-

960 mJ

-

RoHS Compliant

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tape & Box (TB)

OptiMOS™

2003

Obsolete

1 (Unlimited)

3

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

25V

MOSFET (Metal Oxide)

80A

150W Tc

Single

150W

N-Channel

3m Ω @ 55A, 10V

2V @ 100μA

7027pF @ 15V

80A Tc

57nC @ 5V

8.5ns

4.5V 10V

±20V

7.5 ns

45 ns

80A

20V

25V

-

-

IPP041N12N3 G vs IPP03N03LA