Infineon Technologies IPL60R255P6AUMA1
- Part Number:
- IPL60R255P6AUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2481546-IPL60R255P6AUMA1
- Description:
- MOSFET N-CH 600V 4VSON
- ECAD Model:
-
- Datasheet:
- IPL60R255P6AUMA1
Infineon Technologies IPL60R255P6AUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPL60R255P6AUMA1.
- Mounting TypeSurface Mount
- Package / Case4-PowerTSFN
- Supplier Device PackagePG-VSON-4
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™ P6
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)2A (4 Weeks)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max126W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs255mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 530μA
- Input Capacitance (Ciss) (Max) @ Vds1.45pF @ 100V
- Current - Continuous Drain (Id) @ 25°C15.9A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPL60R255P6AUMA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.45pF @ 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPL60R255P6AUMA1 Features
a 600V drain to source voltage (Vdss)
IPL60R255P6AUMA1 Applications
There are a lot of Rochester Electronics, LLC
IPL60R255P6AUMA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.45pF @ 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IPL60R255P6AUMA1 Features
a 600V drain to source voltage (Vdss)
IPL60R255P6AUMA1 Applications
There are a lot of Rochester Electronics, LLC
IPL60R255P6AUMA1 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPL60R255P6AUMA1 More Descriptions
Trans MOSFET N-CH 650V 15.9A 5-Pin VSON T/R
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-VSON-4, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-VSON-4, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
The three parts on the right have similar specifications to IPL60R255P6AUMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimePublishedDrain to Source ResistanceMountNumber of PinsWeightTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeDrain to Source Breakdown VoltageView Compare
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IPL60R255P6AUMA1Surface Mount4-PowerTSFNPG-VSON-4-40°C~150°C TJTape & Reel (TR)CoolMOS™ P6Obsolete2A (4 Weeks)MOSFET (Metal Oxide)126W TcN-Channel255mOhm @ 6.4A, 10V4.5V @ 530μA1.45pF @ 100V15.9A Tc31nC @ 10V600V10V±20VROHS3 Compliant--------------------------------- -
Surface Mount4-PowerTSFNPG-VSON-4-40°C~150°C TJTape & Reel (TR)CoolMOS™ P7Active2A (4 Weeks)MOSFET (Metal Oxide)81W TcN-Channel185mOhm @ 5.6A, 10V4V @ 280μA1081pF @ 400V19A Tc25nC @ 10V650V10V±20VROHS3 Compliant18 Weeks2014149mOhm-----------------------------
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Surface Mount8-PowerTDFN--40°C~150°C TJTape & Reel (TR)CoolMOS™ P6Active1 (Unlimited)MOSFET (Metal Oxide)89.3W TcN-Channel360m Ω @ 4.5A, 10V4.5V @ 370μA1010pF @ 100V11.3A Tc22nC @ 10V-10V±20VROHS3 Compliant18 Weeks2008-Surface Mount875.891673mgSILICON5DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDR-PDSO-N511SingleENHANCEMENT MODEDRAIN12 nsSWITCHINGHalogen Free7ns7 ns33 ns11.3A30V600V0.36Ohm30A247 mJContains Lead-
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Surface Mount4-PowerTSFN--40°C~150°C TJTape & Reel (TR)CoolMOS™ E6Obsolete2A (4 Weeks)MOSFET (Metal Oxide)151W TcN-Channel190m Ω @ 7.3A, 10V3.5V @ 700μA1620pF @ 100V20.2A Tc73nC @ 10V-10V±20VRoHS Compliant12 Weeks2013-Surface Mount4-SILICON4-NO LEADNOT SPECIFIEDNOT SPECIFIED-11SingleENHANCEMENT MODEDRAIN12 nsSWITCHINGHalogen Free11ns10 ns112 ns20.2A20V650V-66A-Contains Lead650V
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