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Infineon Technologies IPL60R065C7AUMA1
- Part Number:
- IPL60R065C7AUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2488482-IPL60R065C7AUMA1
- Description:
- MOSFET HIGH POWER_NEW
- ECAD Model:
-
- Datasheet:
- IPL60R065C7AUMA1
Infineon Technologies IPL60R065C7AUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPL60R065C7AUMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)2A (4 Weeks)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Terminal PositionSINGLE
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PSSO-N4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Drain to Source Voltage (Vdss)600V
- Polarity/Channel TypeN-CHANNEL
- Max Dual Supply Voltage600V
- Drain Current-Max (Abs) (ID)29A
- Pulsed Drain Current-Max (IDM)135A
- Avalanche Energy Rating (Eas)159 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Resistance56mOhm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPL60R065C7AUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 159 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 29A.There is a peak drain current of 135A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 56mOhm.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.
IPL60R065C7AUMA1 Features
the avalanche energy rating (Eas) is 159 mJ
based on its rated peak drain current 135A.
single MOSFETs transistor is 56mOhm
a 600V drain to source voltage (Vdss)
IPL60R065C7AUMA1 Applications
There are a lot of Infineon Technologies
IPL60R065C7AUMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 159 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 29A.There is a peak drain current of 135A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 56mOhm.The maximum dual supply voltage can be supported by 600V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.
IPL60R065C7AUMA1 Features
the avalanche energy rating (Eas) is 159 mJ
based on its rated peak drain current 135A.
single MOSFETs transistor is 56mOhm
a 600V drain to source voltage (Vdss)
IPL60R065C7AUMA1 Applications
There are a lot of Infineon Technologies
IPL60R065C7AUMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPL60R065C7AUMA1 More Descriptions
Single N-Channel 600 V 0.065 Ohm 68 nC CoolMOS Power Mosfet -ThinPak 8x8
Mosfet, N-Ch, 600V, 29A, 180W, Vson; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.056Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPL60R065C7AUMA1
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
Mosfet, N-Ch, 600V, 29A, 180W, Vson; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.056Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPL60R065C7AUMA1
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
The three parts on the right have similar specifications to IPL60R065C7AUMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationHalogen FreeDrain to Source Voltage (Vdss)Polarity/Channel TypeMax Dual Supply VoltageDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET TechnologyDrain to Source ResistanceRoHS StatusLead FreeMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperatureSeriesTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)WeightNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Power DissipationView Compare
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IPL60R065C7AUMA118 WeeksSurface MountTape & Reel (TR)2008e3yesActive2A (4 Weeks)4EAR99Tin (Sn)150°C-40°CSINGLENO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDS-PSSO-N41SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGHalogen Free600VN-CHANNEL600V29A135A159 mJMETAL-OXIDE SEMICONDUCTOR56mOhmROHS3 CompliantContains Lead--------------------------- -
12 WeeksSurface MountTape & Reel (TR)2013--Obsolete2A (4 Weeks)4----SINGLENO LEAD----1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGHalogen Free--650V-26A215 mJ--RoHS CompliantContains LeadSurface Mount4-PowerTSFN4SILICON-40°C~150°C TJCoolMOS™ E6MOSFET (Metal Oxide)83W TcN-Channel420m Ω @ 3.4A, 10V3.5V @ 300μA710pF @ 100V10.1A Tc39nC @ 10V10V±20V10.1A---------
-
18 WeeksSurface MountTape & Reel (TR)2008-yesActive1 (Unlimited)5EAR99---DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N51-ENHANCEMENT MODEDRAINSWITCHINGHalogen Free--600V-7.7A26 mJ--ROHS3 CompliantContains LeadSurface Mount8-PowerTDFN8SILICON-40°C~150°C TJCoolMOS™ C6MOSFET (Metal Oxide)26.6W TcN-Channel1.5 Ω @ 1.1A, 10V3.5V @ 90μA200pF @ 100V3A Tc9.4nC @ 10V10V±20V3A75.891673mg1Single8 ns7ns20 ns40 ns30V-
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16 WeeksSurface MountTape & Reel (TR)2010e3-Obsolete2A (4 Weeks)-EAR99Tin (Sn)----NOT SPECIFIED-NOT SPECIFIED-1----Halogen Free--650V-----RoHS CompliantContains LeadSurface Mount4-PowerTSFN4--40°C~150°C TJCoolMOS™MOSFET (Metal Oxide)83.3W TcN-Channel460m Ω @ 3.4A, 10V4.5V @ 300μA870pF @ 100V8.3A Tc31.5nC @ 10V10V±20V8.3A-2-10 ns7ns8 ns38 ns20V83.3W
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