Infineon Technologies IPD90R1K2C3BTMA1

IPD90R1K2C3BTMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.The maximum input capacitance of this device is 710pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 5.1A.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 900V.The drain-to-source voltage (Vdss) of this transistor needs to be at 900V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IPD90R1K2C3BTMA1 Features
the avalanche energy rating (Eas) is 68 mJ
based on its rated peak drain current 10A.
a 900V drain to source voltage (Vdss)


IPD90R1K2C3BTMA1 Applications
There are a lot of Infineon Technologies
IPD90R1K2C3BTMA1 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,