Infineon Technologies IPD60R600C6BTMA1

Name: IPD60R600C6BTMA1
Brand: Infineon Technologies
SKU: 3586283-IPD60R600C6BTMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD60R600C6BTMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3586283-IPD60R600C6BTMA1

Description:: MOSFET N-CH 600V 7.3A TO252

ECAD Model:

Datasheet:: IPD60R600C6BTMA1

Specifications

Infineon Technologies IPD60R600C6BTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R600C6BTMA1.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
CoolMOS™
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
63W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
600m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7.3A Tc
Gate Charge (Qg) (Max) @ Vgs
20.5nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
7.3A
Drain-source On Resistance-Max
0.6Ohm
Pulsed Drain Current-Max (IDM)
19A
DS Breakdown Voltage-Min
600V
Avalanche Energy Rating (Eas)
133 mJ
RoHS Status
ROHS3 Compliant

Description

IPD60R600C6BTMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 133 mJ.A device's maximum input capacitance is 440pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 7.3A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 19A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IPD60R600C6BTMA1 Features
the avalanche energy rating (Eas) is 133 mJ
based on its rated peak drain current 19A.
a 600V drain to source voltage (Vdss)

IPD60R600C6BTMA1 Applications
There are a lot of Infineon Technologies
IPD60R600C6BTMA1 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

Product Comparison

The three parts on the right have similar specifications to IPD60R600C6BTMA1.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Subcategory

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Factory Lead Time

Mount

Number of Pins

Turn On Delay Time

Halogen Free

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Lead Free

View Compare
IPD60R600C6BTMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2008

e3

yes

Discontinued

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

63W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

600m Ω @ 2.4A, 10V

3.5V @ 200μA

440pF @ 100V

7.3A Tc

20.5nC @ 10V

600V

10V

±20V

7.3A

0.6Ohm

19A

600V

133 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD60R950C6

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Cut Tape (CT)

CoolMOS™

2008

e3

yes

Discontinued

1 (Unlimited)

2

-

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

37W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

950m Ω @ 1.5A, 10V

3.5V @ 130μA

280pF @ 100V

4.4A Tc

13nC @ 10V

600V

10V

±20V

4.4A

0.95Ohm

12A

600V

46 mJ

ROHS3 Compliant

FET General Purpose Power

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R600C6BTMA1 vs IPD60R950C6
IPD60R520C6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.5V @ 230µA

MOSFET (Metal Oxide)

PG-TO252-3

CoolMOS™

520 mOhm @ 2.8A, 10V

66W (Tc)

Tape & Reel (TR)

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

512pF @ 100V

23.4nC @ 10V

N-Channel

-

600V

8.1A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

IPD60R600C6BTMA1 vs IPD60R520C6
IPD60N10S412ATMA1

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2013

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

94W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

12.2m Ω @ 60A, 10V

3.5V @ 46μA

2470pF @ 25V

60A Tc

34nC @ 10V

-

10V

±20V

-

0.0122Ohm

240A

-

120 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14 Weeks

Surface Mount

3

6 ns

Halogen Free

3ns

13 ns

9 ns

60A

20V

100V

Contains Lead

IPD60R600C6BTMA1 vs IPD60N10S412ATMA1

Certification

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IPD60R600C6BTMA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPD60R600C6ATMA1 DISTI #V36:1790_06384487	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.6645 25000 $0.6508 250000 $0.57 1250000 $0.527 2500000 $0.5266
IPD60R600C6ATMA1 DISTI #V72:2272_06384487	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0
IPD60R600C6ATMA1 DISTI #IPD60R600C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	4990	1 $1.34 10 $1.202 100 $0.937 500 $0.77406 1000 $0.6111
IPD60R600C6ATMA1 DISTI #IPD60R600C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	4990	1 $1.34 10 $1.202 100 $0.937 500 $0.77406 1000 $0.6111
IPD60R600C6ATMA1 DISTI #IPD60R600C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	2500	2500 $0.55375 5000 $0.52606 12500 $0.50628
IPD60R600C6BTMA1 DISTI #IPD60R600C6BTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	0
IPD60R600C6BTMA1 DISTI #IPD60R600C6BTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	0
IPD60R600C6BTMA1 DISTI #IPD60R600C6BTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 7.3A TO252 RoHS: Compliant	0
IPD60R600C6ATMA1 DISTI #33922699	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	5000	2500 $0.8453
IPD60R600C6 DISTI #IPD60R600C6	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: RoHS: Compliant	0
IPD60R600C6ATMA1 DISTI #IPD60R600C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R - Tap RoHS: Compliant	0	2500 $0.5419 5000 $0.5229 10000 $0.5039 15000 $0.4869 25000 $0.4779
IPD60R600C6ATMA1 DISTI #SP001117726	Infineon Technologies AG	Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: RoHS: Compliant	0	2500 $0.8249 5000 $0.6439 10000 $0.5749 15000 $0.5229 25000 $0.4899
IPD60R600C6ATMA1 DISTI #30T1837	Infineon Technologies AG	MOSFET, N CH, 600V, 7.3A, TO-252-3, Transistor Po	2480	1 $1.24 10 $1.06 100 $0.818 500 $0.723 1000 $0.572
IPD60R600C6ATMA1 DISTI #	Infineon Technologies AG	Single N-Channel 600 V 600 mOhm 20.5 nC CoolMOS Po RoHS: Compliant	7500	2500 $0.515
IPD60R600C6ATMA1 DISTI #726-IPD60R600C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 20.2A DPAK-2 RoHS: Compliant	12395	1 $1.23 10 $1.05 100 $0.81 500 $0.716 1000 $0.566
IPD60R600C6 DISTI #726-IPD60R600C6	Infineon Technologies AG	MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R600C6BTMA1 DISTI #726-IPD60R600C6BTMA1	Infineon Technologies AG	MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6 RoHS: Compliant	0
IPD60R600C6 DISTI #TMOSP12734	Infineon Technologies AG	N-CH 600V 7,3A 600mOhm TO252-3 RoHS: Compliant	0	2500 $0.71 5000 $0.628
IPD60R600C6ATMA1 DISTI #XSFP00000131733	Infineon Technologies AG	RoHS: Compliant	5000	2500 $0.7357 5000 $0.6867
IPD60R600C6ATMA1 DISTI #1860803	Infineon Technologies AG	MOSFET,N CH,600V,7.3A,TO252	0	1 $1.08 10 $0.866 100 $0.624 250 $0.588 500 $0.551

IPD60R6~~(14)~~
IPD60R~~(53)~~
IPD60~~(54)~~
IPD6~~(51)~~
IPD~~(434)~~

Infineon Technologies IPD60R600C6BTMA1

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