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IPD60R950C6

Infineon Technologies IPD60R950C6

Part Number:
IPD60R950C6
Manufacturer:
Infineon Technologies
Ventron No:
2854233-IPD60R950C6
Description:
MOSFET N-CH 600V 4.4A TO252
ECAD Model:
Datasheet:
IPD60R950C6

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Specifications
Infineon Technologies IPD60R950C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD60R950C6.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    CoolMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    37W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    950m Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 130μA
  • Input Capacitance (Ciss) (Max) @ Vds
    280pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    4.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    4.4A
  • Drain-source On Resistance-Max
    0.95Ohm
  • Pulsed Drain Current-Max (IDM)
    12A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    46 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IPD60R950C6 Description CoolMOS? is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS? C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler

IPD60R950C6Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Fully qualified according to JEDEC for Industrial Applications Pb-free plating, Halogen free mold compound

IPD60R950C6 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.


Product Comparison
The three parts on the right have similar specifications to IPD60R950C6.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    ECCN Code
    Additional Feature
    Reach Compliance Code
    JEDEC-95 Code
    Factory Lead Time
    Mount
    Number of Pins
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Input Capacitance
    Rds On Max
    Lead Free
    View Compare
  • IPD60R950C6
    IPD60R950C6
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    CoolMOS™
    2008
    e3
    yes
    Discontinued
    1 (Unlimited)
    2
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    37W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    950m Ω @ 1.5A, 10V
    3.5V @ 130μA
    280pF @ 100V
    4.4A Tc
    13nC @ 10V
    600V
    10V
    ±20V
    4.4A
    0.95Ohm
    12A
    600V
    46 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD640N06LGBTMA1
    IPD640N06LGBTMA1
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2008
    e3
    no
    Discontinued
    1 (Unlimited)
    2
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    47W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    64m Ω @ 18A, 10V
    2V @ 16μA
    470pF @ 30V
    18A Tc
    13nC @ 10V
    60V
    4.5V 10V
    ±20V
    18A
    0.064Ohm
    72A
    60V
    43 mJ
    ROHS3 Compliant
    EAR99
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
    not_compliant
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPD60R950C6 vs IPD640N06LGBTMA1
  • IPD65R420CFDATMA1
    IPD65R420CFDATMA1
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2008
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    1
    -
    83.3W Tc
    -
    -
    N-Channel
    -
    420mOhm @ 3.4A, 10V
    4.5V @ 300μA
    870pF @ 100V
    8.7A Tc
    31.5nC @ 10V
    650V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    18 Weeks
    Surface Mount
    3
    PG-TO252-3
    150°C
    -55°C
    83.3W
    10 ns
    7ns
    8 ns
    38 ns
    8.7A
    20V
    650V
    870pF
    420 mΩ
    Lead Free
    IPD60R950C6 vs IPD65R420CFDATMA1
  • IPD65R1K4CFDATMA1
    IPD65R1K4CFDATMA1
    Infineon Technologies
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2012
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    28.4W Tc
    -
    -
    N-Channel
    -
    1.4Ohm @ 1A, 10V
    4.5V @ 100μA
    262pF @ 100V
    2.8A Tc
    10nC @ 10V
    650V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    18 Weeks
    -
    -
    PG-TO252-3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPD60R950C6 vs IPD65R1K4CFDATMA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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