Infineon Technologies IPD50R950CEAUMA1

Name: IPD50R950CEAUMA1
Brand: Infineon Technologies
SKU: 3554388-IPD50R950CEAUMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD50R950CEAUMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3554388-IPD50R950CEAUMA1

Description:: CONSUMER

ECAD Model:

Datasheet:: IPD50R950CEAUMA1

Specifications

Infineon Technologies IPD50R950CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R950CEAUMA1.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Package / Case
TO-252-3
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
34W
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
34W
Turn On Delay Time
7 ns
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Rise Time
4.9ns
Drain to Source Voltage (Vdss)
500V
Polarity/Channel Type
N-CHANNEL
Fall Time (Typ)
19.5 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
4.3A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
500V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
12.8A
Input Capacitance
231pF
Avalanche Energy Rating (Eas)
68 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance
950mOhm
Rds On Max
950 mΩ
Height
2.41mm
Length
6.73mm
Width
6.22mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IPD50R950CEAUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 68 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 12.8A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 950mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 500V.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.

IPD50R950CEAUMA1 Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 12.8A.
single MOSFETs transistor is 950mOhm
a 500V drain to source voltage (Vdss)

IPD50R950CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R950CEAUMA1 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IPD50R950CEAUMA1 More Descriptions

Mosfet, N-Ch, 500V, 6.6A, To-252 Rohs Compliant: Yes |Infineon IPD50R950CEAUMA1
Trans MOSFET N-CH 500V 4.3A Automotive 3-Pin(2 Tab) DPAK T/R
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

Product Comparison

The three parts on the right have similar specifications to IPD50R950CEAUMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Terminal Form

Reach Compliance Code

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Halogen Free

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Input Capacitance

Avalanche Energy Rating (Eas)

FET Technology

Drain to Source Resistance

Rds On Max

Height

Length

Width

RoHS Status

Lead Free

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Configuration

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

FET Feature

HTS Code

Subcategory

Pin Count

Qualification Status

Case Connection

Drain Current-Max (Abs) (ID)

Additional Feature

Reference Standard

View Compare
IPD50R950CEAUMA1

Infineon Technologies

18 Weeks

Surface Mount

TO-252-3

3

Tape & Reel (TR)

2008

e3

yes

Active

3 (168 Hours)

2

EAR99

Tin (Sn)

150°C

-55°C

34W

GULL WING

not_compliant

R-PSSO-G2

1

Single

ENHANCEMENT MODE

34W

7 ns

SWITCHING

Halogen Free

4.9ns

500V

N-CHANNEL

19.5 ns

25 ns

4.3A

20V

500V

500V

12.8A

231pF

68 mJ

METAL-OXIDE SEMICONDUCTOR

950mOhm

950 mΩ

2.41mm

6.73mm

6.22mm

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD50R500CEBTMA1

Infineon Technologies

6 Weeks

-

TO-252-3, DPak (2 Leads Tab), SC-63

-

Cut Tape (CT)

2013

-

no

Discontinued

1 (Unlimited)

2

-

-

-

-

-

GULL WING

-

R-PSSO-G2

1

-

ENHANCEMENT MODE

-

-

SWITCHING

-

-

500V

-

-

-

-

-

-

-

24A

-

129 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

Surface Mount

YES

SILICON

-55°C~150°C TJ

CoolMOS™

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

SINGLE WITH BUILT-IN DIODE

57W Tc

N-Channel

500m Ω @ 2.3A, 13V

3.5V @ 200μA

433pF @ 100V

7.6A Tc

18.7nC @ 10V

13V

±20V

TO-252AA

0.5Ohm

500V

Super Junction

-

-

-

-

-

-

-

-

IPD50R950CEAUMA1 vs IPD50R500CEBTMA1
IPD50R520CP

Infineon Technologies

-

-

TO-252-3, DPak (2 Leads Tab), SC-63

-

Tape & Reel (TR)

2008

-

yes

Obsolete

1 (Unlimited)

2

EAR99

-

-

-

-

GULL WING

compliant

R-PSSO-G2

1

-

ENHANCEMENT MODE

-

-

SWITCHING

-

-

550V

-

-

-

-

-

-

-

15A

-

166 mJ

-

-

-

-

-

-

RoHS Compliant

-

Surface Mount

YES

SILICON

-55°C~150°C TJ

CoolMOS™

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

SINGLE WITH BUILT-IN DIODE

66W Tc

N-Channel

520m Ω @ 3.8A, 10V

3.5V @ 250μA

680pF @ 100V

7.1A Tc

17nC @ 10V

10V

±20V

TO-252AA

0.52Ohm

500V

-

8541.29.00.95

FET General Purpose Power

3

Not Qualified

DRAIN

7.1A

-

-

IPD50R950CEAUMA1 vs IPD50R520CP
IPD50N03S207ATMA1

Infineon Technologies

10 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

Tape & Reel (TR)

2006

e3

-

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

-

-

GULL WING

not_compliant

R-PSSO-G2

1

-

ENHANCEMENT MODE

-

18 ns

-

Halogen Free

40ns

-

-

30 ns

26 ns

50A

20V

30V

-

200A

-

250 mJ

-

-

-

-

-

-

ROHS3 Compliant

Contains Lead

Surface Mount

-

SILICON

-55°C~175°C TJ

OptiMOS™

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

SINGLE WITH BUILT-IN DIODE

136W Tc

N-Channel

7.3m Ω @ 50A, 10V

4V @ 85μA

2000pF @ 25V

50A Tc

68nC @ 10V

10V

±20V

-

-

-

-

-

-

-

-

DRAIN

-

ULTRA LOW RESISTANCE

AEC-Q101

IPD50R950CEAUMA1 vs IPD50N03S207ATMA1

Certification

Related parts for IPD50R950CEAUMA1

IPD50R399CPBTMA1

Infineon Technologies

LOW POWER_LEGACY
IPD50N04S308ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3
IPD50N06S4L08ATMA2

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3
IPD50R500CEBTMA1

Infineon Technologies

MOSFET N-CH 500V 7.6A PG-TO252
IPD50R399CP

Infineon Technologies

MOSFET N-CH 550V 9A TO-252
IPD50R520CP

Infineon Technologies

MOSFET N-CH 550V 7.1A TO-252
IPD50N04S3-08

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3
IPD50N10S3L16ATMA1

Infineon Technologies

MOSFET N-CH 100V 50A TO252-3
IPD50N03S207ATMA1

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3
IPD50R1K4CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A PG-TO-252

Popular Search Part Number Related Keywords Search Tags

IPD50R950CEAUMA1 Price
IPD50R950CEAUMA1 Picture
IPD50R950CEAUMA1 Buy
IPD50R950CEAUMA1 Distributor
IPD50R950CEAUMA1 Image
IPD50R950CEAUMA1 Inquiry
IPD50R950CEAUMA1 Manufacturer
IPD50R950CEAUMA1 Part
IPD50R950CEAUMA1 Description
IPD50R950CEAUMA1 Technical Data
IPD50R950CEAUMA1 Stock
IPD50R950CEAUMA1 Wholesales
IPD50R950CEAUMA1 PDF
IPD50R950CEAUMA1 Inventory
IPD50R950CEAUMA1 Supplier
IPD50R950CEAUMA1 Datasheet
IPD50R950CEAUMA1 Rfq
IPD50R950CEAUMA1 Specification

IPD50R9~~(4)~~
IPD50R~~(34)~~
IPD50~~(60)~~
IPD5~~(60)~~
IPD~~(434)~~

Part Number	Manufacturers	Description	Price
IPD50R950CEAUMA1 DISTI #V36:1790_13979481	Infineon Technologies AG	Trans MOSFET N-CH 500V 4.3A T/R	2500 $0.2103 25000 $0.2053 250000 $0.1748 1250000 $0.1568 2500000 $0.1566
IPD50R950CEAUMA1 DISTI #V72:2272_13979481	Infineon Technologies AG	Trans MOSFET N-CH 500V 4.3A T/R
IPD50R950CEAUMA1 DISTI #IPD50R950CEAUMA1-ND	Infineon Technologies AG	CONSUMER RoHS: Compliant	2500 $0.21027
IPD50R950CEAUMA1 DISTI #IPD50R950CEAUMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPD50R950CEAUMA1) RoHS: Compliant	2500 $0.1859 5000 $0.1789 10000 $0.1719 15000 $0.1669 25000 $0.1639
IPD50R950CEAUMA1 DISTI #SP001396802	Infineon Technologies AG	CONSUMER (Alt: SP001396802) RoHS: Compliant	2500 $0.2389 5000 $0.1949 10000 $0.1789 15000 $0.1649 25000 $0.1529
IPD50R950CEAUMA1 DISTI #726-IPD50R950CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	1 $0.56 10 $0.467 100 $0.285 1000 $0.22 2500 $0.188

Infineon Technologies IPD50R950CEAUMA1

Quick Request Quote

LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators

MPU-6050 Manufacturer, Working Principle, Application and Package

74LS48 Function, Wiring Method, Application and 74LS48 vs 74HC48

LM339N Alternatives, Specifications, Purpose and LM339 vs LM339N