Infineon Technologies IPD50R800CE

Name: IPD50R800CE
Brand: Infineon Technologies
SKU: 2482405-IPD50R800CE
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD50R800CE

Manufacturer:: Infineon Technologies

Ventron No:: 2482405-IPD50R800CE

Description:: MOSFET N CH 500V 5A TO252

ECAD Model:

Datasheet:: IPD50R800CE

Specifications

Infineon Technologies IPD50R800CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R800CE.

Vgs(th) (Max) @ Id:
3.5V @ 130µA
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO252-3
Series:
CoolMOS™
Rds On (Max) @ Id, Vgs:
800 mOhm @ 1.5A, 13V
Power Dissipation (Max):
40W (Tc)
Packaging:
Original-Reel®
Package / Case:
TO-252-3, DPak (2 Leads Tab), SC-63
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:
12.4nC @ 10V
FET Type:
N-Channel
FET Feature:
Super Junction
Drain to Source Voltage (Vdss):
500V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)

Description

We can supply International Rectifier (Infineon Technologies) IPD50R800CE, use the request quote form to request IPD50R800CE pirce, International Rectifier (Infineon Technologies) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPD50R800CE.The price and lead time for IPD50R800CE depending on the quantity required, availability and warehouse location.

Product Comparison

The three parts on the right have similar specifications to IPD50R800CE.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Mount

Number of Pins

JESD-609 Code

Terminal Finish

Reference Standard

Turn On Delay Time

Halogen Free

Rise Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Lead Free

Additional Feature

Fall Time (Typ)

View Compare
IPD50R800CE

Infineon Technologies

3.5V @ 130µA

MOSFET (Metal Oxide)

PG-TO252-3

CoolMOS™

800 mOhm @ 1.5A, 13V

40W (Tc)

Original-Reel®

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C ~ 150°C (TJ)

Surface Mount

280pF @ 100V

12.4nC @ 10V

N-Channel

Super Junction

500V

5A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD50R520CP

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2008

yes

Obsolete

1 (Unlimited)

2

EAR99

8541.29.00.95

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

66W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

520m Ω @ 3.8A, 10V

3.5V @ 250μA

680pF @ 100V

7.1A Tc

17nC @ 10V

550V

10V

±20V

TO-252AA

7.1A

0.52Ohm

15A

500V

166 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD50R800CE vs IPD50R520CP
IPD50N10S3L16ATMA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

-

Active

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

15m Ω @ 50A, 10V

2.4V @ 60μA

4180pF @ 25V

50A Tc

64nC @ 10V

-

4.5V 10V

±20V

-

-

0.0199Ohm

200A

-

-

ROHS3 Compliant

14 Weeks

Surface Mount

3

e3

Matte Tin (Sn)

AEC-Q101

10 ns

Halogen Free

5ns

29 ns

50A

20V

100V

Contains Lead

-

-

IPD50R800CE vs IPD50N10S3L16ATMA1
IPD50N03S207ATMA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

-

Active

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

R-PSSO-G2

-

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

7.3m Ω @ 50A, 10V

4V @ 85μA

2000pF @ 25V

50A Tc

68nC @ 10V

-

10V

±20V

-

-

-

200A

-

250 mJ

ROHS3 Compliant

10 Weeks

Surface Mount

3

e3

Tin (Sn)

AEC-Q101

18 ns

Halogen Free

40ns

26 ns

50A

20V

30V

Contains Lead

ULTRA LOW RESISTANCE

30 ns

IPD50R800CE vs IPD50N03S207ATMA1

Certification

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Infineon Technologies

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IPD50R500CEBTMA1

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MOSFET N-CH 550V 7.1A TO-252
IPD50N04S3-08

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MOSFET N-CH 40V 50A TO252-3
IPD50N10S3L16ATMA1

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IPD50R800CE Specification

Part Number	Manufacturers	Description	Stock	Price
IPD50R800CEAUMA1 DISTI #V36:1790_13979477	Infineon Technologies AG	Trans MOSFET N-CH 500V 5A 3-Pin(2 Tab) DPAK T/R	0	2500 $0.2605 25000 $0.255 250000 $0.2218 1250000 $0.2023 2500000 $0.2021
IPD50R800CEBTMA1 DISTI #IPD50R800CEBTMA1CT-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	1983	1 $0.94 10 $0.834 25 $0.7528 100 $0.6587 250 $0.57768 500 $0.51234 1000 $0.40517
IPD50R800CEBTMA1 DISTI #IPD50R800CEBTMA1DKR-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	1983	1 $0.94 10 $0.834 25 $0.7528 100 $0.6587 250 $0.57768 500 $0.51234 1000 $0.40517
IPD50R800CEBTMA1 DISTI #IPD50R800CEBTMA1TR-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	0
IPD50R800CEATMA1 DISTI #IPD50R800CEATMA1TR-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	0
IPD50R800CEATMA1 DISTI #IPD50R800CEATMA1CT-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	0
IPD50R800CEATMA1 DISTI #IPD50R800CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N CH 500V 5A TO252 RoHS: Compliant	0
IPD50R800CEAUMA1 DISTI #IPD50R800CEAUMA1-ND	Infineon Technologies AG	CONSUMER RoHS: Compliant	0	2500 $0.2605
IPD50R800CEBTMA1 DISTI #SP000992076	Infineon Technologies AG	Trans MOSFET N-CH 550V 5A 3-Pin DPAK T/R (Alt: SP0 RoHS: Compliant	20
IPD50R800CEBTMA1 DISTI #IPD50R800CEBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 5A 3-Pin DPAK T/R - Bulk (A RoHS: Compliant	0	962 $0.3739 1924 $0.3609 2886 $0.3479 4810 $0.3359 9620 $0.3299
IPD50R800CEAUMA1 DISTI #IPD50R800CEAUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Bulk (Alt:	0	1563 $0.2299 3126 $0.2219 4689 $0.2139 7815 $0.2059 15630 $0.2029
IPD50R800CEAUMA1 DISTI #IPD50R800CEAUMA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Tape and R RoHS: Compliant	0	2500 $0.2459 5000 $0.2369 10000 $0.2289 15000 $0.2209 25000 $0.2169
IPD50R800CEATMA1 DISTI #IPD50R800CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R - RoHS: Compliant	0	1389 $0.2589 2778 $0.2499 4167 $0.2399 6945 $0.2319 13890 $0.2279
IPD50R800CEAUMA1 DISTI #SP001396798	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP0013 RoHS: Compliant	0	2500 $0.3159 5000 $0.2589 10000 $0.2369 15000 $0.2189 25000 $0.2029
IPD50R800CEAUMA1 DISTI #726-IPD50R800CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	1400	1 $0.63 10 $0.531 100 $0.343 1000 $0.274 2500 $0.231 10000 $0.223 25000 $0.214
IPD50R800CEBTMA1 DISTI #726-IPD50R800CEBTMA1	Infineon Technologies AG	MOSFET N-Ch 500V 5A DPAK-2 RoHS: Compliant	18	1 $0.91 10 $0.732 100 $0.562 500 $0.497 1000 $0.392 2500 $0.348 10000 $0.335
IPD50R800CE DISTI #726-IPD50R800CE	Infineon Technologies AG	MOSFET N-Ch 500V 5A DPAK-2 RoHS: Compliant	0
IPD50R800CEATMA1 DISTI #726-IPD50R800CEATMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0
IPD50R800CE DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.8ohm, 1-Ele RoHS: Compliant	67500	1 $0.28 25 $0.26 100 $0.25 500 $0.24 1000 $0.22
IPD50R800CEBTMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.8ohm, 1-Ele RoHS: Compliant	12400	1 $0.42 25 $0.39 100 $0.38 500 $0.36 1000 $0.34
IPD50R800CEAUMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.8ohm, 1-Ele RoHS: Not Compliant	225280	1 $0.26 25 $0.24 100 $0.23 500 $0.22 1000 $0.21
IPD50R800CEATMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.8ohm, 1-Ele RoHS: Not Compliant	325966	1 $0.29 25 $0.27 100 $0.26 500 $0.25 1000 $0.24
IPD50R800CEATMA1 DISTI #IPD50R800CEATMA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 500V, 5A, 40W,	1508	1 $0.61 3 $0.42 10 $0.34 100 $0.29

IPD50R8~~(3)~~
IPD50R~~(34)~~
IPD50~~(60)~~
IPD5~~(60)~~
IPD~~(434)~~

Infineon Technologies IPD50R800CE

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