IPD50R650CE

Infineon Technologies IPD50R650CE

Part Number:
IPD50R650CE
Manufacturer:
Infineon Technologies
Ventron No:
3070331-IPD50R650CE
Description:
MOSFET N CH 500V 6.1A PG-TO252
ECAD Model:
Datasheet:
IPD50R650CE

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Specifications
Infineon Technologies IPD50R650CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R650CE.
  • Package / Case
    PG-TO252-3
  • Packaging
    Tape & Reel (TR)
  • FET Type
    N Channel
  • Rds On (Max) @ Id, Vgs
    650mΩ @ 1.8A,13V
  • Vgs(th) (Max) @ Id
    3.5V @ 150uA
  • Drain to Source Voltage (Vdss)
    500V
  • Continuous Drain Current (Id) @ 25°C
    6.1A Tc
  • Power Dissipation-Max (Ta=25°C)
    69W Tc
  • RoHS Status
    RoHS Compliant
Description
IPD50R650CE Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD50R650CE or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50R650CE. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPD50R650CE.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    RoHS Status
    Factory Lead Time
    Mount
    Mounting Type
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Lead Free
    Surface Mount
    Pbfree Code
    Subcategory
    Pin Count
    Qualification Status
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IPD50R650CE
    IPD50R650CE
    PG-TO252-3
    Tape & Reel (TR)
    N Channel
    650mΩ @ 1.8A,13V
    3.5V @ 150uA
    500V
    6.1A Tc
    69W Tc
    RoHS Compliant
    -
    -
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  • IPD50N04S308ATMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    N-Channel
    7.5m Ω @ 50A, 10V
    4V @ 40μA
    -
    -
    -
    ROHS3 Compliant
    26 Weeks
    Surface Mount
    Surface Mount
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2007
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    68W Tc
    ENHANCEMENT MODE
    68W
    DRAIN
    11 ns
    Halogen Free
    2350pF @ 25V
    50A Tc
    35nC @ 10V
    7ns
    10V
    ±20V
    6 ns
    16 ns
    50A
    20V
    40V
    0.0075Ohm
    200A
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R399CP
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    N-Channel
    399m Ω @ 4.9A, 10V
    3.5V @ 330μA
    550V
    -
    -
    RoHS Compliant
    -
    -
    Surface Mount
    SILICON
    -55°C~150°C TJ
    CoolMOS™
    2007
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    TIN
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    83W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    -
    890pF @ 100V
    9A Tc
    23nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    0.399Ohm
    20A
    -
    YES
    yes
    FET General Purpose Power
    4
    Not Qualified
    SWITCHING
    TO-252AA
    9A
    500V
    215 mJ
  • IPD50N04S3-08
    PG-TO252-3
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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