Infineon Technologies IPD50R650CE
- Part Number:
- IPD50R650CE
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070331-IPD50R650CE
- Description:
- MOSFET N CH 500V 6.1A PG-TO252
- Datasheet:
- IPD50R650CE
Infineon Technologies IPD50R650CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R650CE.
- Package / CasePG-TO252-3
- PackagingTape & Reel (TR)
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs650mΩ @ 1.8A,13V
- Vgs(th) (Max) @ Id3.5V @ 150uA
- Drain to Source Voltage (Vdss)500V
- Continuous Drain Current (Id) @ 25°C6.1A Tc
- Power Dissipation-Max (Ta=25°C)69W Tc
- RoHS StatusRoHS Compliant
IPD50R650CE Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD50R650CE or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50R650CE. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD50R650CE or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50R650CE. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IPD50R650CE.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusFactory Lead TimeMountMounting TypeTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Lead FreeSurface MountPbfree CodeSubcategoryPin CountQualification StatusTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IPD50R650CEPG-TO252-3Tape & Reel (TR)N Channel650mΩ @ 1.8A,13V3.5V @ 150uA500V6.1A Tc69W TcRoHS Compliant-----------------------------------------------------
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)N-Channel7.5m Ω @ 50A, 10V4V @ 40μA---ROHS3 Compliant26 WeeksSurface MountSurface MountSILICON-55°C~175°C TJOptiMOS™2007e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE68W TcENHANCEMENT MODE68WDRAIN11 nsHalogen Free2350pF @ 25V50A Tc35nC @ 10V7ns10V±20V6 ns16 ns50A20V40V0.0075Ohm200AContains Lead----------
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)N-Channel399m Ω @ 4.9A, 10V3.5V @ 330μA550V--RoHS Compliant--Surface MountSILICON-55°C~150°C TJCoolMOS™2007e3Obsolete1 (Unlimited)2-TINMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE83W TcENHANCEMENT MODE-DRAIN--890pF @ 100V9A Tc23nC @ 10V-10V±20V-----0.399Ohm20A-YESyesFET General Purpose Power4Not QualifiedSWITCHINGTO-252AA9A500V215 mJ
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PG-TO252-3Tape & Reel (TR)------RoHS Compliant----------------------------------------------------
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