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Infineon Technologies IPD50R520CPBTMA1
- Part Number:
- IPD50R520CPBTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487607-IPD50R520CPBTMA1
- Description:
- LOW POWER_LEGACY
- ECAD Model:
-
- Datasheet:
- IPD50R520CP
Infineon Technologies IPD50R520CPBTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R520CPBTMA1.
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishTin (Sn)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)7.1A
- Drain-source On Resistance-Max0.52Ohm
- Pulsed Drain Current-Max (IDM)15A
- DS Breakdown Voltage-Min500V
- Avalanche Energy Rating (Eas)166 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- RoHS StatusRoHS Compliant
IPD50R520CPBTMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 166 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 15A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.
IPD50R520CPBTMA1 Features
the avalanche energy rating (Eas) is 166 mJ
based on its rated peak drain current 15A.
IPD50R520CPBTMA1 Applications
There are a lot of Infineon Technologies
IPD50R520CPBTMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 166 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 7.1A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 15A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.
IPD50R520CPBTMA1 Features
the avalanche energy rating (Eas) is 166 mJ
based on its rated peak drain current 15A.
IPD50R520CPBTMA1 Applications
There are a lot of Infineon Technologies
IPD50R520CPBTMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IPD50R520CPBTMA1 More Descriptions
Trans MOSFET N-CH 500V 7.1A 3-Pin(2 Tab) DPAK T/R
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV, PG-TO252-3, RoHSInfineon SCT
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV, PG-TO252-3, RoHSInfineon SCT
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
The three parts on the right have similar specifications to IPD50R520CPBTMA1.
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ImagePart NumberManufacturerSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperatureSeriesECCN CodeTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageLead FreeDrain to Source Voltage (Vdss)FET FeatureSubcategoryView Compare
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IPD50R520CPBTMA1YESSILICONTape & Reel (TR)2008e3yesObsolete1 (Unlimited)2Tin (Sn)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNELTO-252AA7.1A0.52Ohm15A500V166 mJMETAL-OXIDE SEMICONDUCTORRoHS Compliant------------------------------- -
-SILICONTape & Reel (TR)2007e3-Not For New Designs1 (Unlimited)2Tin (Sn)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PSSO-G2--1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN----0.0075Ohm200A---ROHS3 Compliant26 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJOptiMOS™EAR99MOSFET (Metal Oxide)68W Tc68W11 nsN-Channel7.5m Ω @ 50A, 10V4V @ 40μAHalogen Free2350pF @ 25V50A Tc35nC @ 10V7ns10V±20V6 ns16 ns50A20V40VContains Lead---
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YESSILICONCut Tape (CT)2013-noDiscontinued1 (Unlimited)2-SINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2--1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-SWITCHING-TO-252AA-0.5Ohm24A500V129 mJ-ROHS3 Compliant6 Weeks-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJCoolMOS™-MOSFET (Metal Oxide)57W Tc--N-Channel500m Ω @ 2.3A, 13V3.5V @ 200μA-433pF @ 100V7.6A Tc18.7nC @ 10V-13V±20V------500VSuper Junction-
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YESSILICONTape & Reel (TR)2007e3yesObsolete1 (Unlimited)2TINSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING-TO-252AA9A0.399Ohm20A500V215 mJ-RoHS Compliant--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJCoolMOS™-MOSFET (Metal Oxide)83W Tc--N-Channel399m Ω @ 4.9A, 10V3.5V @ 330μA-890pF @ 100V9A Tc23nC @ 10V-10V±20V------550V-FET General Purpose Power
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