IPD50R380CEAUMA1

Infineon Technologies IPD50R380CEAUMA1

Part Number:
IPD50R380CEAUMA1
Manufacturer:
Infineon Technologies
Ventron No:
2479293-IPD50R380CEAUMA1
Description:
MOSFET NCH 500V 14.1A TO252
ECAD Model:
Datasheet:
IPD50R380CEAUMA1

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Specifications
Infineon Technologies IPD50R380CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R380CEAUMA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    CoolMOS™
  • Published
    2008
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    98W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    98W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    380m Ω @ 3.2A, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 260μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    584pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    14.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    24.8nC @ 10V
  • Drive Voltage (Max Rds On,Min Rds On)
    13V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    14.1A
  • Threshold Voltage
    3V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    500V
  • Drain to Source Breakdown Voltage
    500V
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Super Junction
  • Height
    2.55mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
IPD50R380CEAUMA1 Description
IPD50R380CEAUMA1 is a type of CoolMOS? CE power transistor provided by Infineon Technologies based on the super-junction(SJ) principle and pioneered by Infineon Technologies. It is specifically designed to meet the highest efficiency standards for cost-sensitive applications in Consumer and Lighting markets. It provides all benefits of a fast switching Superjunction MOSFET while featuring ease of use and offering the best cost-down performance ratio available on the market.

IPD50R380CEAUMA1 Features
Easy to use/drive
Extremely low losses
Revolutionary CoolMOS? technology
Available in the DPAK package
Very high commutation ruggedness

IPD50R380CEAUMA1 Applications
PC Silverbox
LCD & PDP TV
Indoor lighting
IPD50R380CEAUMA1 More Descriptions
Mosfet Transistor, N Channel, 9.9 A, 500 V, 0.35 Ohm, 13 V, 3 V Rohs Compliant: Yes
Single N-Channel 500 V 380 mOhm 24.8 nC CoolMOS™ Power Mosfet - TO-252-3
MOSFET, N-CH, 500V, 9.9A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.9A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Product Comparison
The three parts on the right have similar specifications to IPD50R380CEAUMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    FET Feature
    Height
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Subcategory
    Pin Count
    Qualification Status
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    HTS Code
    Additional Feature
    Reference Standard
    Rise Time
    Fall Time (Typ)
    View Compare
  • IPD50R380CEAUMA1
    IPD50R380CEAUMA1
    18 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2008
    yes
    Active
    3 (168 Hours)
    2
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    1
    98W Tc
    ENHANCEMENT MODE
    98W
    DRAIN
    7.2 ns
    N-Channel
    SWITCHING
    380m Ω @ 3.2A, 13V
    3.5V @ 260μA
    Halogen Free
    584pF @ 100V
    14.1A Tc
    24.8nC @ 10V
    13V
    ±20V
    35 ns
    14.1A
    3V
    20V
    500V
    500V
    150°C
    Super Junction
    2.55mm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50R399CP
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2007
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    -
    83W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    399m Ω @ 4.9A, 10V
    3.5V @ 330μA
    -
    890pF @ 100V
    9A Tc
    23nC @ 10V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    YES
    e3
    TIN
    FET General Purpose Power
    4
    Not Qualified
    550V
    TO-252AA
    9A
    0.399Ohm
    20A
    500V
    215 mJ
    -
    -
    -
    -
    -
  • IPD50R520CP
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    CoolMOS™
    2008
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    -
    66W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    520m Ω @ 3.8A, 10V
    3.5V @ 250μA
    -
    680pF @ 100V
    7.1A Tc
    17nC @ 10V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    YES
    -
    -
    FET General Purpose Power
    3
    Not Qualified
    550V
    TO-252AA
    7.1A
    0.52Ohm
    15A
    500V
    166 mJ
    8541.29.00.95
    -
    -
    -
    -
  • IPD50N03S207ATMA1
    10 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2006
    -
    Active
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    -
    136W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    18 ns
    N-Channel
    -
    7.3m Ω @ 50A, 10V
    4V @ 85μA
    Halogen Free
    2000pF @ 25V
    50A Tc
    68nC @ 10V
    10V
    ±20V
    26 ns
    50A
    -
    20V
    30V
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    e3
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    200A
    -
    250 mJ
    -
    ULTRA LOW RESISTANCE
    AEC-Q101
    40ns
    30 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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