Infineon Technologies IPD50R380CEAUMA1
- Part Number:
- IPD50R380CEAUMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479293-IPD50R380CEAUMA1
- Description:
- MOSFET NCH 500V 14.1A TO252
- Datasheet:
- IPD50R380CEAUMA1
Infineon Technologies IPD50R380CEAUMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R380CEAUMA1.
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesCoolMOS™
- Published2008
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max98W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation98W
- Case ConnectionDRAIN
- Turn On Delay Time7.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs380m Ω @ 3.2A, 13V
- Vgs(th) (Max) @ Id3.5V @ 260μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds584pF @ 100V
- Current - Continuous Drain (Id) @ 25°C14.1A Tc
- Gate Charge (Qg) (Max) @ Vgs24.8nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)13V
- Vgs (Max)±20V
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)14.1A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage500V
- Drain to Source Breakdown Voltage500V
- Max Junction Temperature (Tj)150°C
- FET FeatureSuper Junction
- Height2.55mm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPD50R380CEAUMA1 Description
IPD50R380CEAUMA1 is a type of CoolMOS? CE power transistor provided by Infineon Technologies based on the super-junction(SJ) principle and pioneered by Infineon Technologies. It is specifically designed to meet the highest efficiency standards for cost-sensitive applications in Consumer and Lighting markets. It provides all benefits of a fast switching Superjunction MOSFET while featuring ease of use and offering the best cost-down performance ratio available on the market.
IPD50R380CEAUMA1 Features
Easy to use/drive
Extremely low losses
Revolutionary CoolMOS? technology
Available in the DPAK package
Very high commutation ruggedness
IPD50R380CEAUMA1 Applications
PC Silverbox
LCD & PDP TV
Indoor lighting
IPD50R380CEAUMA1 is a type of CoolMOS? CE power transistor provided by Infineon Technologies based on the super-junction(SJ) principle and pioneered by Infineon Technologies. It is specifically designed to meet the highest efficiency standards for cost-sensitive applications in Consumer and Lighting markets. It provides all benefits of a fast switching Superjunction MOSFET while featuring ease of use and offering the best cost-down performance ratio available on the market.
IPD50R380CEAUMA1 Features
Easy to use/drive
Extremely low losses
Revolutionary CoolMOS? technology
Available in the DPAK package
Very high commutation ruggedness
IPD50R380CEAUMA1 Applications
PC Silverbox
LCD & PDP TV
Indoor lighting
IPD50R380CEAUMA1 More Descriptions
Mosfet Transistor, N Channel, 9.9 A, 500 V, 0.35 Ohm, 13 V, 3 V Rohs Compliant: Yes
Single N-Channel 500 V 380 mOhm 24.8 nC CoolMOS Power Mosfet - TO-252-3
MOSFET, N-CH, 500V, 9.9A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.9A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
Single N-Channel 500 V 380 mOhm 24.8 nC CoolMOS Power Mosfet - TO-252-3
MOSFET, N-CH, 500V, 9.9A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.9A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHSInfineon SCT
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
The three parts on the right have similar specifications to IPD50R380CEAUMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)FET FeatureHeightRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishSubcategoryPin CountQualification StatusDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)HTS CodeAdditional FeatureReference StandardRise TimeFall Time (Typ)View Compare
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IPD50R380CEAUMA118 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™2008yesActive3 (168 Hours)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE198W TcENHANCEMENT MODE98WDRAIN7.2 nsN-ChannelSWITCHING380m Ω @ 3.2A, 13V3.5V @ 260μAHalogen Free584pF @ 100V14.1A Tc24.8nC @ 10V13V±20V35 ns14.1A3V20V500V500V150°CSuper Junction2.55mmROHS3 CompliantContains Lead-------------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™2007yesObsolete1 (Unlimited)2-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE-83W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING399m Ω @ 4.9A, 10V3.5V @ 330μA-890pF @ 100V9A Tc23nC @ 10V10V±20V---------RoHS Compliant-YESe3TINFET General Purpose Power4Not Qualified550VTO-252AA9A0.399Ohm20A500V215 mJ-----
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)CoolMOS™2008yesObsolete1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE-66W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING520m Ω @ 3.8A, 10V3.5V @ 250μA-680pF @ 100V7.1A Tc17nC @ 10V10V±20V---------RoHS Compliant-YES--FET General Purpose Power3Not Qualified550VTO-252AA7.1A0.52Ohm15A500V166 mJ8541.29.00.95----
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10 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE-136W TcENHANCEMENT MODE-DRAIN18 nsN-Channel-7.3m Ω @ 50A, 10V4V @ 85μAHalogen Free2000pF @ 25V50A Tc68nC @ 10V10V±20V26 ns50A-20V30V----ROHS3 CompliantContains Lead-e3Tin (Sn)-------200A-250 mJ-ULTRA LOW RESISTANCEAEC-Q10140ns30 ns
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