Infineon Technologies IPD50R280CEATMA1

Name: IPD50R280CEATMA1
Brand: Infineon Technologies
SKU: 2493108-IPD50R280CEATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD50R280CEATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2493108-IPD50R280CEATMA1

Description:: MOSFET N-CH 500V 13A PG-TO252

ECAD Model:

Datasheet:: IPD50R280CEATMA1

Specifications

Infineon Technologies IPD50R280CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R280CEATMA1.

Factory Lead Time
52 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
CoolMOS™ CE
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
119W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
280m Ω @ 4.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds
773pF @ 100V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
32.6nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
13V
Vgs (Max)
±20V
Drain-source On Resistance-Max
0.28Ohm
Pulsed Drain Current-Max (IDM)
42.9A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
231 mJ
RoHS Status
ROHS3 Compliant

Description

IPD50R280CEATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 231 mJ.The maximum input capacitance of this device is 773pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.There is no pulsed drain current maximum for this device based on its rated peak drain current 42.9A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (13V), this device helps reduce its power consumption.

IPD50R280CEATMA1 Features
the avalanche energy rating (Eas) is 231 mJ
based on its rated peak drain current 42.9A.
a 500V drain to source voltage (Vdss)

IPD50R280CEATMA1 Applications
There are a lot of Infineon Technologies
IPD50R280CEATMA1 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Product Comparison

The three parts on the right have similar specifications to IPD50R280CEATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

JESD-609 Code

Pbfree Code

Terminal Finish

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Case Connection

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Mount

Number of Pins

ECCN Code

Additional Feature

Reference Standard

Turn On Delay Time

Halogen Free

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Lead Free

View Compare
IPD50R280CEATMA1

Infineon Technologies

52 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™ CE

2011

Discontinued

3 (168 Hours)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

119W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

280m Ω @ 4.2A, 13V

3.5V @ 350μA

773pF @ 100V

13A Tc

32.6nC @ 10V

500V

13V

±20V

0.28Ohm

42.9A

500V

231 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD50R399CP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

CoolMOS™

2007

Obsolete

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

83W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

399m Ω @ 4.9A, 10V

3.5V @ 330μA

890pF @ 100V

9A Tc

23nC @ 10V

550V

10V

±20V

0.399Ohm

20A

500V

215 mJ

RoHS Compliant

e3

yes

TIN

FET General Purpose Power

NOT SPECIFIED

compliant

NOT SPECIFIED

4

Not Qualified

DRAIN

TO-252AA

9A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD50R280CEATMA1 vs IPD50R399CP
IPD50N04S3-08

Infineon Technologies

-

-

PG-TO252-3

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD50R280CEATMA1 vs IPD50N04S3-08
IPD50N03S207ATMA1

Infineon Technologies

10 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Active

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

136W Tc

ENHANCEMENT MODE

N-Channel

-

7.3m Ω @ 50A, 10V

4V @ 85μA

2000pF @ 25V

50A Tc

68nC @ 10V

-

10V

±20V

-

200A

-

250 mJ

ROHS3 Compliant

e3

-

Tin (Sn)

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

-

-

DRAIN

-

-

Surface Mount

3

EAR99

ULTRA LOW RESISTANCE

AEC-Q101

18 ns

Halogen Free

40ns

30 ns

26 ns

50A

20V

30V

Contains Lead

IPD50R280CEATMA1 vs IPD50N03S207ATMA1

Certification

Related parts for IPD50R280CEATMA1

IPD50R399CPBTMA1

Infineon Technologies

LOW POWER_LEGACY
IPD50N04S308ATMA1

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MOSFET N-CH 40V 50A TO252-3
IPD50N06S4L08ATMA2

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IPD50R500CEBTMA1

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MOSFET N-CH 500V 7.6A PG-TO252
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MOSFET N-CH 550V 9A TO-252
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MOSFET N-CH 550V 7.1A TO-252
IPD50N04S3-08

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MOSFET N-CH 40V 50A TO252-3
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IPD50R2~~(6)~~
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Part Number	Manufacturers	Description	Stock	Price
IPD50R280CEATMA1 DISTI #V72:2272_06384146	Infineon Technologies AG	Trans MOSFET N-CH 550V 13A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	957	1 $1.7415 10 $1.377 25 $1.3353 50 $1.127 100 $1.0422 250 $0.9406 500 $0.8233 1000 $0.79 3000 $0.7803 6000 $0.7704 15000 $0.7609 30000 $0.6848 75000 $0.6163
IPD50R280CEATMA1 DISTI #IPD50R280CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 500V 13A PG-TO252 RoHS: Compliant	0
IPD50R280CEATMA1 DISTI #IPD50R280CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 500V 13A PG-TO252 RoHS: Compliant	0
IPD50R280CEATMA1 DISTI #IPD50R280CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 500V 13A PG-TO252 RoHS: Compliant	0
IPD50R280CEATMA1 DISTI #31642735	Infineon Technologies AG	Trans MOSFET N-CH 550V 13A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	957	11 $1.7415
IPD50R280CE DISTI #726-SP001117680	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0
IPD50R280CEATMA1 DISTI #726-IPD50R280CEATMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0

Infineon Technologies IPD50R280CEATMA1

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