Infineon Technologies IPD50P04P4L-11
- Part Number:
- IPD50P04P4L-11
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478786-IPD50P04P4L-11
- Description:
- MOSFET P-CH 40V 50A TO252-3
- ECAD Model:
-
- Datasheet:
- IPD50P04P4L-11
Infineon Technologies IPD50P04P4L-11 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50P04P4L-11.
- Package / CasePG-TO252-3
- PackagingTape & Reel (TR)
- FET TypeP Channel
- Rds On (Max) @ Id, Vgs10.6mΩ @ 50A,10V
- Vgs(th) (Max) @ Id2.2V @ 85uA
- Drain to Source Voltage (Vdss)40V
- Continuous Drain Current (Id) @ 25°C50A Tc
- Power Dissipation-Max (Ta=25°C)58W Tc
- RoHS StatusRoHS Compliant
IPD50P04P4L-11 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD50P04P4L-11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50P04P4L-11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD50P04P4L-11 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50P04P4L-11. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IPD50P04P4L-11 More Descriptions
Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to IPD50P04P4L-11.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusFactory Lead TimeMountMounting TypeNumber of PinsSupplier Device PackageWeightOperating TemperatureSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxTurn On Delay TimeHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageInput CapacitanceRds On MaxLead FreeSurface MountTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JESD-609 CodeTerminal FinishReference StandardView Compare
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IPD50P04P4L-11PG-TO252-3Tape & Reel (TR)P Channel10.6mΩ @ 50A,10V2.2V @ 85uA40V50A Tc58W TcRoHS Compliant-------------------------------------------------------------- -
TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)N-Channel7.8mOhm @ 50A, 10V2.2V @ 35μA60V--ROHS3 Compliant12 WeeksSurface MountSurface Mount3PG-TO252-3-113.949996g-55°C~175°C TJAutomotive, AEC-Q101, OptiMOS™1999Active1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)171W Tc9 nsHalogen Free4780pF @ 25V50A Tc64nC @ 10V2ns4.5V 10V±16V8 ns45 ns50A16V60V4.78nF7.8 mΩLead Free-----------------------------
-
TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)N-Channel520m Ω @ 3.8A, 10V3.5V @ 250μA550V--RoHS Compliant--Surface Mount----55°C~150°C TJCoolMOS™2008Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-66W Tc--680pF @ 100V7.1A Tc17nC @ 10V-10V±20V--------YESSILICONyes2EAR998541.29.00.95FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA7.1A0.52Ohm15A500V166 mJ---
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)N-Channel15m Ω @ 50A, 10V2.4V @ 60μA---ROHS3 Compliant14 WeeksSurface MountSurface Mount3---55°C~175°C TJOptiMOS™2011Active1 (Unlimited)--MOSFET (Metal Oxide)-100W Tc10 nsHalogen Free4180pF @ 25V50A Tc64nC @ 10V5ns4.5V 10V±20V-29 ns50A20V100V--Contains Lead-SILICON-2EAR99--SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PSSO-G2-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN---0.0199Ohm200A--e3Matte Tin (Sn)AEC-Q101
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