Infineon Technologies IPD135N03L G

Name: IPD135N03L G
Brand: Infineon Technologies
SKU: 3586007-IPD135N03L G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPD135N03L G

Manufacturer:: Infineon Technologies

Ventron No:: 3586007-IPD135N03L G

Description:: MOSFET N-CH 30V 30A TO252-3

ECAD Model:

Datasheet:: IPD135N03L G

Specifications

Infineon Technologies IPD135N03L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD135N03L G.

Package / Case
PG-TO252-3
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

IPD135N03L G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPD135N03L G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD135N03L G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPD135N03L G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mounting Type

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Factory Lead Time

Pbfree Code

Additional Feature

JEDEC-95 Code

Mount

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

View Compare
IPD135N03L G

Infineon Technologies

PG-TO252-3

Tape & Reel (TR)

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPD16CN10N G

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

2

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

compliant

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 53A, 10V

4V @ 61μA

3220pF @ 50V

53A Tc

48nC @ 10V

100V

10V

±20V

53A

0.016Ohm

212A

100V

107 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

IPD135N03L G vs IPD16CN10N G
IPD12CN10NGBUMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

RoHS Compliant

Surface Mount

YES

SILICON

-55°C~175°C TJ

OptiMOS™

2007

-

Obsolete

3 (168 Hours)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

125W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

12.4m Ω @ 67A, 10V

4V @ 83μA

4320pF @ 50V

67A Tc

65nC @ 10V

100V

10V

±20V

67A

0.0124Ohm

268A

100V

154 mJ

8 Weeks

no

FAST SWITCHING

TO-252AA

-

-

-

-

-

-

-

-

-

IPD135N03L G vs IPD12CN10NGBUMA1
IPD105N03LGATMA1

Infineon Technologies

TO-252-3, DPak (2 Leads Tab), SC-63

Tape & Reel (TR)

RoHS Compliant

Surface Mount

-

SILICON

-55°C~175°C TJ

OptiMOS™

2011

-

Obsolete

1 (Unlimited)

2

EAR99

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

38W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.5m Ω @ 30A, 10V

2.2V @ 250μA

1500pF @ 15V

35A Tc

14nC @ 10V

-

4.5V 10V

±20V

-

-

245A

-

30 mJ

-

no

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-252AA

Surface Mount

38W

3.7 ns

14ns

2.4 ns

14 ns

35A

20V

30V

IPD135N03L G vs IPD105N03LGATMA1

Certification

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IPD135N03L G

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MOSFET N-CH 30V 30A TO252-3
IPD12N03LB G

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MOSFET N-CH 30V 30A TO-252
IPD12CN10NGBUMA1

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MOSFET N-CH 100V 67A TO252-3
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IPD135N03L G Specification

Part Number	Manufacturers	Description	Stock	Price
IPD135N03LGATMA1 DISTI #V72:2272_06391086	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	743	1 $0.7395 10 $0.6183 25 $0.555 100 $0.3646 250 $0.3305 500 $0.3279
IPD135N03LGBTMA1 DISTI #V36:1790_06391085	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.278 25000 $0.2727 250000 $0.2405 1250000 $0.2216 2500000 $0.2213
IPD135N03LGATMA1 DISTI #V36:1790_06391086	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	2500 $0.278 25000 $0.2718 250000 $0.2345 1250000 $0.213 2500000 $0.2127
IPD135N03LGATMA1 DISTI #IPD135N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	6819	1 $0.74 10 $0.652 100 $0.4996 500 $0.39496 1000 $0.31597
IPD135N03LGATMA1 DISTI #IPD135N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	6819	1 $0.74 10 $0.652 100 $0.4996 500 $0.39496 1000 $0.31597
IPD135N03LGATMA1 DISTI #IPD135N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	5000	2500 $0.27801 5000 $0.25884 12500 $0.24925 25000 $0.24286
IPD135N03LGXT DISTI #IPD135N03LGXTTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	0
IPD135N03LGXT DISTI #IPD135N03LGXTCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	0
IPD135N03LGXT DISTI #IPD135N03LGXTDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant	0
IPD135N03LGBTMA1 DISTI #IPD135N03LGBTMA1-ND	Infineon Technologies AG	LV POWER MOS RoHS: Compliant	0	2500 $0.27801
IPD135N03LGATMA1 DISTI #33651457	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	743	25 $0.7395
IPD135N03L G DISTI #30579566	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) TO-252 RoHS: Compliant	230	104 $0.2412
IPD135N03L G DISTI #IPD135N03L G	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R (Alt: I RoHS: Compliant	0
IPD135N03L G DISTI #IPD135N03LG	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R - Bulk RoHS: Not Compliant	0	1471 $0.2589 2942 $0.2499 4413 $0.2399 7355 $0.2319 14710 $0.2279
IPD135N03LGXT DISTI #IPD135N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) TO-252 - Ta RoHS: Compliant	0	2500 $0.2629 5000 $0.2529 10000 $0.2439 15000 $0.2359 25000 $0.2319
IPD135N03LGXT DISTI #IPD135N03LGBTMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2 Tab) TO-252 - Ta RoHS: Compliant	0
IPD135N03LGATMA1 DISTI #SP000796912	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R (Alt: S RoHS: Compliant	0	2500 $0.3309 5000 $0.2699 10000 $0.2479 15000 $0.2289 25000 $0.2119
IPD135N03LGATMA1 DISTI #50Y2027	Infineon Technologies AG	MOSFET Transistor, N Channel, 30 A, 30 V, 0.0113 o	1195	1 $0.687 10 $0.573 25 $0.505 50 $0.437 100 $0.37 250 $0.345 500 $0.321 1000 $0.296
IPD135N03L G DISTI #726-IPD135N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 30A DPAK-2 OptiMOS 3 RoHS: Compliant	0	1 $0.69 10 $0.567 100 $0.366 1000 $0.293 2500 $0.247 10000 $0.238 25000 $0.229
IPD135N03LGATMA1 DISTI #726-IPD135N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 30A DPAK-2 RoHS: Compliant	8485	1 $0.68 10 $0.567 100 $0.366 1000 $0.293 2500 $0.247 10000 $0.238 25000 $0.229
IPD135N03LG DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.01 RoHS: Compliant	700	1 $0.29 25 $0.27 100 $0.26 500 $0.25 1000 $0.24
IPD135N03L G DISTI #	Infineon Technologies AG		19235
IPD135N03LGATMA1 DISTI #IPD135N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 21A, 31W,	2500	1 $0.5608 5 $0.3784 25 $0.3345 100 $0.2905 500 $0.2703
IPD135N03L G DISTI #1775582	Infineon Technologies AG	MOSFET, N CH, 30A, 30V, PG-TO252-3 RoHS: Compliant	0	1 $1.04 10 $0.854 100 $0.552 1000 $0.442 2500 $0.372
IPD135N03LGATMA1 DISTI #2480822RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	0	1 $1.12 10 $0.983 100 $0.753 500 $0.596 1000 $0.477
IPD135N03LGATMA1 DISTI #2480822	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	1485	1 $1.12 10 $0.983 100 $0.753 500 $0.596 1000 $0.477
IPD135N03LGATMA1 DISTI #2480822	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3	1835	1 $0.606 10 $0.488 100 $0.286 250 $0.255 500 $0.224
IPD135N03LG DISTI #	Infineon Technologies AG	30V,30A,N Channel Power MOSFET	1300	1 $0.41 100 $0.34 500 $0.3 1000 $0.29

IPD135N~~(10)~~
IPD135~~(10)~~
IPD13~~(16)~~
IPD1~~(423)~~
IPD~~(434)~~

Infineon Technologies IPD135N03L G

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