Infineon Technologies IPD100N06S403ATMA1
- Part Number:
- IPD100N06S403ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813789-IPD100N06S403ATMA1
- Description:
- MOSFET N-CH 60V 100A TO252-3-11
- ECAD Model:
-
- Datasheet:
- IPD100N06S403ATMA1
Infineon Technologies IPD100N06S403ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD100N06S403ATMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackagePG-TO252-3-11
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max150W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 90μA
- Input Capacitance (Ciss) (Max) @ Vds10.4pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs128nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPD100N06S403ATMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10.4pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD100N06S403ATMA1 Features
a 60V drain to source voltage (Vdss)
IPD100N06S403ATMA1 Applications
There are a lot of Rochester Electronics, LLC
IPD100N06S403ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10.4pF @ 25V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD100N06S403ATMA1 Features
a 60V drain to source voltage (Vdss)
IPD100N06S403ATMA1 Applications
There are a lot of Rochester Electronics, LLC
IPD100N06S403ATMA1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The three parts on the right have similar specifications to IPD100N06S403ATMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountPbfree CodePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageView Compare
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IPD100N06S403ATMA1Surface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-11-55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)150W TcN-Channel3.5mOhm @ 100A, 10V4V @ 90μA10.4pF @ 25V100A Tc128nC @ 10V60V10V±20VROHS3 Compliant--------------------------------------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)52W TcN-Channel11.6m Ω @ 30A, 10V2V @ 20μA1300pF @ 15V30A Tc11nC @ 5V30V4.5V 10V±20VRoHS CompliantYESSILICON2008e32EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA30A0.0116Ohm120A30V64 mJ----------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)38W TcN-Channel10.5m Ω @ 30A, 10V2.2V @ 250μA1500pF @ 15V35A Tc14nC @ 10V-4.5V 10V±20VRoHS Compliant-SILICON2011-2EAR99-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE-SINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA--245A-30 mJSurface Mountno38W3.7 ns14ns2.4 ns14 ns35A20V30V
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63PG-TO252-3-55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)136W TcN-Channel11mOhm @ 75A, 10V4V @ 83μA4.31pF @ 60V75A Tc65nC @ 10V120V10V±20VROHS3 Compliant--------------------------------------
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