Infineon Technologies IPB80N06S407ATMA1
- Part Number:
- IPB80N06S407ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493754-IPB80N06S407ATMA1
- Description:
- MOSFET N-CH 60V 80A TO263-3
- Datasheet:
- IPB80N06S407ATMA1
Infineon Technologies IPB80N06S407ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S407ATMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max79W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.1m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 40μA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0071Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)71 mJ
- RoHS StatusROHS3 Compliant
IPB80N06S407ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 71 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB80N06S407ATMA1 Features
the avalanche energy rating (Eas) is 71 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)
IPB80N06S407ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S407ATMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 71 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB80N06S407ATMA1 Features
the avalanche energy rating (Eas) is 71 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)
IPB80N06S407ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S407ATMA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The three parts on the right have similar specifications to IPB80N06S407ATMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusAdditional FeatureView Compare
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IPB80N06S407ATMA1Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEDRAINN-Channel7.1m Ω @ 80A, 10V4V @ 40μA4500pF @ 25V80A Tc56nC @ 10V60V10V±20V80A0.0071Ohm320A60V71 mJROHS3 Compliant--
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING--R-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.2m Ω @ 52A, 10V2V @ 125μA2620pF @ 25V80A Tc105nC @ 10V55V4.5V 10V±20V80A0.011Ohm320A55V370 mJROHS3 CompliantLOGIC LEVEL COMPATIBLE
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING--R-PSSO-G21SINGLE WITH BUILT-IN DIODE190W TcENHANCEMENT MODEDRAINN-Channel8.8m Ω @ 50A, 10V4V @ 125μA2360pF @ 25V80A Tc80nC @ 10V55V10V±20V80A0.0088Ohm320A55V370 mJROHS3 Compliant-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)SINGLEGULL WING--R-PSSO-G21SINGLE WITH BUILT-IN DIODE158W TcENHANCEMENT MODEDRAINN-Channel10.7m Ω @ 60A, 10V2V @ 93μA2075pF @ 25V80A Tc80nC @ 10V55V4.5V 10V±20V80A0.0147Ohm320A55V280 mJROHS3 CompliantLOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
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