Infineon Technologies IPB80N06S405ATMA1

Name: IPB80N06S405ATMA1
Brand: Infineon Technologies
SKU: 2493753-IPB80N06S405ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB80N06S405ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2493753-IPB80N06S405ATMA1

Description:: MOSFET N-CH 60V 80A TO263-3

ECAD Model:

Datasheet:: IPB80N06S405ATMA1

Specifications

Infineon Technologies IPB80N06S405ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB80N06S405ATMA1.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2009
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
107W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds
6500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
81nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
80A
Drain-source On Resistance-Max
0.0057Ohm
Pulsed Drain Current-Max (IDM)
320A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
152 mJ
RoHS Status
ROHS3 Compliant

Description

IPB80N06S405ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 152 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6500pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [80A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 320A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPB80N06S405ATMA1 Features
the avalanche energy rating (Eas) is 152 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)

IPB80N06S405ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S405ATMA1 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

Product Comparison

The three parts on the right have similar specifications to IPB80N06S405ATMA1.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Mount

Number of Pins

Pbfree Code

Additional Feature

Reach Compliance Code

Element Configuration

Power Dissipation

Turn On Delay Time

Halogen Free

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Height

Length

Width

Lead Free

JESD-609 Code

Terminal Finish

Subcategory

Pin Count

Qualification Status

View Compare
IPB80N06S405ATMA1

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2009

Discontinued

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

107W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

5.4m Ω @ 80A, 10V

4V @ 60μA

6500pF @ 25V

80A Tc

81nC @ 10V

60V

10V

±20V

80A

0.0057Ohm

320A

60V

152 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB80N06S2L06ATMA2

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

-

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

-

250W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

6m Ω @ 69A, 10V

2V @ 180μA

3800pF @ 25V

80A Tc

150nC @ 10V

-

4.5V 10V

±20V

-

0.0084Ohm

-

-

-

ROHS3 Compliant

10 Weeks

Surface Mount

3

yes

LOGIC LEVEL COMPATIBLE

not_compliant

Single

250W

11 ns

Halogen Free

21ns

20 ns

60 ns

80A

20V

55V

55V

4.4mm

10mm

9.25mm

Contains Lead

-

-

-

-

-

IPB80N06S405ATMA1 vs IPB80N06S2L06ATMA2
IPB80N06S2L-H5

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

4.7m Ω @ 80A, 10V

2V @ 250μA

5000pF @ 25V

80A Tc

190nC @ 10V

55V

4.5V 10V

±20V

80A

0.0062Ohm

320A

55V

700 mJ

RoHS Compliant

-

-

-

yes

LOGIC LEVEL COMPATIBLE

compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

e3

Matte Tin (Sn)

FET General Purpose Power

4

Not Qualified

IPB80N06S405ATMA1 vs IPB80N06S2L-H5
IPB80N06S209ATMA1

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Discontinued

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

190W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

8.8m Ω @ 50A, 10V

4V @ 125μA

2360pF @ 25V

80A Tc

80nC @ 10V

55V

10V

±20V

80A

0.0088Ohm

320A

55V

370 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPB80N06S405ATMA1 vs IPB80N06S209ATMA1