Infineon Technologies IPB80N06S2L05ATMA1

IPB80N06S2L05ATMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5700pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 67 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 55V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IPB80N06S2L05ATMA1 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 67 ns


IPB80N06S2L05ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S2L05ATMA1 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit