Infineon Technologies IPB070N06L G
- Part Number:
- IPB070N06L G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586834-IPB070N06L G
- Description:
- MOSFET N-CH 60V 80A TO-263
- ECAD Model:
-
- Datasheet:
- IPB,IPP070N06L G
Infineon Technologies IPB070N06L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB070N06L G.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max214W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.7m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id2V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds4300pF @ 30V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs126nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0067Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)450 mJ
- RoHS StatusRoHS Compliant
IPB070N06L G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4300pF @ 30V.80A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 320A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPB070N06L G Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)
IPB070N06L G Applications
There are a lot of Infineon Technologies
IPB070N06L G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 450 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4300pF @ 30V.80A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 320A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPB070N06L G Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 320A.
a 60V drain to source voltage (Vdss)
IPB070N06L G Applications
There are a lot of Infineon Technologies
IPB070N06L G applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IPB070N06L G More Descriptions
MOSFET N-CH 60V 80A TO-263
Contact for details
Contact for details
The three parts on the right have similar specifications to IPB070N06L G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusPbfree CodeView Compare
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IPB070N06L GSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2009e3Obsolete1 (Unlimited)2EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE214W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.7m Ω @ 80A, 10V2V @ 150μA4300pF @ 30V80A Tc126nC @ 10V60V4.5V 10V±20V80A0.0067Ohm320A60V450 mJRoHS Compliant-- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011-Obsolete1 (Unlimited)2EAR99-LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIED-NOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE115W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.7m Ω @ 80A, 10V2.2V @ 58μA8400pF @ 30V80A Tc50nC @ 4.5V60V4.5V 10V±20V80A0.0047Ohm320A60V77 mJ-yes
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TIN-FET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliant404R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE100W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING9.7m Ω @ 46A, 10V3.5V @ 46μA2410pF @ 40V70A Tc35nC @ 10V80V6V 10V±20V70A0.0097Ohm280A80V90 mJRoHS Compliantyes
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliant404R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.2m Ω @ 80A, 10V2V @ 180μA5100pF @ 30V80A Tc157nC @ 10V60V4.5V 10V±20V80A0.0062Ohm320A60V530 mJRoHS Compliant-
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