Infineon Technologies IPB04N03LB G

Name: IPB04N03LB G
Brand: Infineon Technologies
SKU: 3071696-IPB04N03LB G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB04N03LB G

Manufacturer:: Infineon Technologies

Ventron No:: 3071696-IPB04N03LB G

Description:: MOSFET N-CH 30V 80A D2PAK

ECAD Model:

Datasheet:: IPB04N03LB

Specifications

Infineon Technologies IPB04N03LB G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB04N03LB G.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
107W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5m Ω @ 55A, 10V
Vgs(th) (Max) @ Id
2V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds
5203pF @ 15V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V

Description

IPB04N03LB G Overview
A device's maximum input capacitance is 5203pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IPB04N03LB G Features
a 30V drain to source voltage (Vdss)

IPB04N03LB G Applications
There are a lot of Infineon Technologies
IPB04N03LB G applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

IPB04N03LB G More Descriptions

MOSFET N-CH 30V 80A D2PAK

Product Comparison

The three parts on the right have similar specifications to IPB04N03LB G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

JESD-609 Code

Terminal Finish

Subcategory

Reach Compliance Code

RoHS Status

View Compare
IPB04N03LB G

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

107W Tc

N-Channel

3.5m Ω @ 55A, 10V

2V @ 70μA

5203pF @ 15V

80A Tc

40nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB049N06L3GATMA1

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

115W Tc

N-Channel

4.7m Ω @ 80A, 10V

2.2V @ 58μA

8400pF @ 30V

80A Tc

50nC @ 4.5V

60V

4.5V 10V

±20V

YES

SILICON

yes

2

EAR99

LOGIC LEVEL COMPATIBLE

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

80A

0.0047Ohm

320A

60V

77 mJ

-

-

-

-

-

IPB04N03LB G vs IPB049N06L3GATMA1
IPB097N08N3 G

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

100W Tc

N-Channel

9.7m Ω @ 46A, 10V

3.5V @ 46μA

2410pF @ 40V

70A Tc

35nC @ 10V

80V

6V 10V

±20V

YES

SILICON

yes

2

EAR99

-

SINGLE

GULL WING

260

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

70A

0.0097Ohm

280A

80V

90 mJ

e3

MATTE TIN

FET General Purpose Power

compliant

RoHS Compliant

IPB04N03LB G vs IPB097N08N3 G
IPB08CN10N G

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2007

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

167W Tc

N-Channel

8.2m Ω @ 95A, 10V

4V @ 130μA

6660pF @ 50V

95A Tc

100nC @ 10V

100V

10V

±20V

YES

SILICON

-

2

EAR99

-

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

95A

0.0082Ohm

380A

100V

262 mJ

e3

MATTE TIN

FET General Purpose Power

compliant

RoHS Compliant

IPB04N03LB G vs IPB08CN10N G