Infineon Technologies IPB04N03LA G
- Part Number:
- IPB04N03LA G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492289-IPB04N03LA G
- Description:
- MOSFET N-CH 25V 80A TO-263
- Datasheet:
- IPB04N03LA G
Infineon Technologies IPB04N03LA G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB04N03LA G.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max107W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.9m Ω @ 55A, 10V
- Vgs(th) (Max) @ Id2V @ 60μA
- Input Capacitance (Ciss) (Max) @ Vds3877pF @ 15V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0064Ohm
- Pulsed Drain Current-Max (IDM)385A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)290 mJ
- RoHS StatusRoHS Compliant
IPB04N03LA G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 3877pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 385A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB04N03LA G Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 385A.
a 25V drain to source voltage (Vdss)
IPB04N03LA G Applications
There are a lot of Infineon Technologies
IPB04N03LA G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 3877pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 385A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB04N03LA G Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 385A.
a 25V drain to source voltage (Vdss)
IPB04N03LA G Applications
There are a lot of Infineon Technologies
IPB04N03LA G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
The three parts on the right have similar specifications to IPB04N03LA G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountVoltage - Rated DCCurrent RatingContinuous Drain Current (ID)Lead FreeView Compare
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IPB04N03LA GSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e3Obsolete1 (Unlimited)2EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE107W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING3.9m Ω @ 55A, 10V2V @ 60μA3877pF @ 15V80A Tc32nC @ 5V25V4.5V 10V±20V80A0.0064Ohm385A25V290 mJRoHS Compliant-------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)OptiMOS™--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----------42W Tc--N-Channel-9.6mOhm @ 30A, 10V2.2V @ 250μA1.6pF @ 15V35A Tc15nC @ 10V30V4.5V 10V±20V-----ROHS3 CompliantD2PAK (TO-263AB)-----
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e0Obsolete1 (Unlimited)2EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING220-NOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING2.7m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V-4.5V 10V±20V-0.0041Ohm385A-960 mJNon-RoHS Compliant-Surface Mount25V80A80AContains Lead
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliant404R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE250W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6.2m Ω @ 80A, 10V2V @ 180μA5100pF @ 30V80A Tc157nC @ 10V60V4.5V 10V±20V80A0.0062Ohm320A60V530 mJRoHS Compliant------
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