Infineon Technologies IPB049NE7N3 G
- Part Number:
- IPB049NE7N3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070363-IPB049NE7N3 G
- Description:
- MOSFET N-CH 75V 80A TO263-3
- ECAD Model:
-
- Datasheet:
- IPB049NE7N3 G
Infineon Technologies IPB049NE7N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB049NE7N3 G.
- Surface MountYES
- Number of Terminals2
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree no
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Powers
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-263AB
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.0049Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min75V
- Avalanche Energy Rating (Eas)370 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)150W
- RoHS StatusRoHS Compliant
IPB049NE7N3 G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 75V.
IPB049NE7N3 G Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
IPB049NE7N3 G Applications
There are a lot of Infineon Technologies AG
IPB049NE7N3 G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 370 mJ.Its drain current is 80A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 75V.
IPB049NE7N3 G Features
the avalanche energy rating (Eas) is 370 mJ
based on its rated peak drain current 320A.
IPB049NE7N3 G Applications
There are a lot of Infineon Technologies AG
IPB049NE7N3 G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
The three parts on the right have similar specifications to IPB049NE7N3 G.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusNumber of TerminationsTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Additional FeatureView Compare
-
IPB049NE7N3 GYES2SILICONe3icon-pbfree no1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowersSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNELTO-263AB80A0.0049Ohm320A75V370 mJMETAL-OXIDE SEMICONDUCTOR150WRoHS Compliant--------------------- -
YES-SILICONe3yes1 (Unlimited)EAR99MATTE TINFET General Purpose PowerSINGLEGULL WING260compliant404R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--70A0.0097Ohm280A80V90 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete2MOSFET (Metal Oxide)100W TcN-Channel9.7m Ω @ 46A, 10V3.5V @ 46μA2410pF @ 40V70A Tc35nC @ 10V80V6V 10V±20V-
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TINFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--95A0.0082Ohm380A100V262 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2007Obsolete2MOSFET (Metal Oxide)167W TcN-Channel8.2m Ω @ 95A, 10V4V @ 130μA6660pF @ 50V95A Tc100nC @ 10V100V10V±20V-
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TINFET General Purpose PowerSINGLEGULL WING260compliant404R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--80A0.0062Ohm320A60V530 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete2MOSFET (Metal Oxide)250W TcN-Channel6.2m Ω @ 80A, 10V2V @ 180μA5100pF @ 30V80A Tc157nC @ 10V60V4.5V 10V±20VAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 December 2023
LT4320 Ideal Diode Bridge Controllers Subverts the Traditional Bridge Rectifier
Ⅰ. What is LT4320?Ⅱ. How does LT4320 overcome the shortcomings of full-wave rectification?Ⅲ. Which manufacturer makes the LT4320?Ⅳ. Pin configuration of LT4320Ⅴ. Three-phase ideal rectification based on LT4320Ⅵ.... -
18 December 2023
Can CR2032 Button Battery Be Recharged?
Ⅰ. What is CR2032 battery?Ⅱ. Development of CR2032 lithium button batteryⅢ. Five major brands of CR2032 button batteriesⅣ. Applications and application circuit of CR2032 button batteryⅤ. Is the... -
19 December 2023
DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security
Ⅰ. What is iButton?Ⅱ. Overview of DS1990A iButtonⅢ. Functional block diagram of DS1990AⅣ. Where is DS1990A iButton used?Ⅴ. How does DS1990A communicate with the host device?Ⅵ. Specifications of... -
19 December 2023
PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC
Ⅰ. What is PT2399?Ⅱ. Structure and working principle of PT2399Ⅲ. Total harmonic distortion and noise of PT2399Ⅳ. Which one is better, PT2399 or PT2399?Ⅴ. Who is the manufacturer...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.