Infineon Technologies IPB042N10N3 G

Name: IPB042N10N3 G
Brand: Infineon Technologies
SKU: 2479816-IPB042N10N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB042N10N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479816-IPB042N10N3 G

Description:: MOSFET N-CH 100V 100A TO263-3

ECAD Model:

Datasheet:: IPB042N10N3 G

Specifications

Infineon Technologies IPB042N10N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB042N10N3 G.

Vgs(th) (Max) @ Id:
3.5V @ 150µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO263-3
Series:
OptiMOS™
Rds On (Max) @ Id, Vgs:
4.2 mOhm @ 50A, 10V
Power Dissipation (Max):
214W (Tc)
Packaging:
Tape & Reel (TR)
Package / Case:
TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
8410pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
117nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)

Description

part No. IPB042N10N3 G Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

Product Comparison

The three parts on the right have similar specifications to IPB042N10N3 G.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Additional Feature

View Compare
IPB042N10N3 G

Infineon Technologies

3.5V @ 150µA

±20V

MOSFET (Metal Oxide)

PG-TO263-3

OptiMOS™

4.2 mOhm @ 50A, 10V

214W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

-55°C ~ 175°C (TJ)

Surface Mount

8410pF @ 50V

117nC @ 10V

N-Channel

-

6V, 10V

100V

100A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB04N03LB G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

107W Tc

N-Channel

3.5m Ω @ 55A, 10V

2V @ 70μA

5203pF @ 15V

80A Tc

40nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPB042N10N3 G vs IPB04N03LB G
IPB097N08N3 G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

100W Tc

N-Channel

9.7m Ω @ 46A, 10V

3.5V @ 46μA

2410pF @ 40V

70A Tc

35nC @ 10V

80V

6V 10V

±20V

YES

SILICON

e3

yes

2

EAR99

MATTE TIN

FET General Purpose Power

SINGLE

GULL WING

260

compliant

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

70A

0.0097Ohm

280A

80V

90 mJ

RoHS Compliant

-

IPB042N10N3 G vs IPB097N08N3 G
IPB065N06L G

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

250W Tc

N-Channel

6.2m Ω @ 80A, 10V

2V @ 180μA

5100pF @ 30V

80A Tc

157nC @ 10V

60V

4.5V 10V

±20V

YES

SILICON

e3

-

2

EAR99

MATTE TIN

FET General Purpose Power

SINGLE

GULL WING

260

compliant

40

4

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

80A

0.0062Ohm

320A

60V

530 mJ

RoHS Compliant

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

IPB042N10N3 G vs IPB065N06L G