Infineon Technologies IPB039N10N3 G
- Part Number:
- IPB039N10N3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586091-IPB039N10N3 G
- Description:
- MOSFET N-CH 100V 160A TO263-7
- ECAD Model:
-
- Datasheet:
- IPB039N10N3 G
Infineon Technologies IPB039N10N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB039N10N3 G.
- Surface MountYES
- Number of Terminals6
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree yes
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G6
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-263AA
- Drain Current-Max (Abs) (ID)160A
- Drain-source On Resistance-Max0.0039Ohm
- Pulsed Drain Current-Max (IDM)640A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)340 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)214W
- RoHS StatusRoHS Compliant
IPB039N10N3 G Description
The IPB039N10N3 G is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB039N10N3 G is in the TO-263-7 package with 214W power dissipation.
IPB039N10N3G Features
Excellent switching performance
World's lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Environmentally friendly
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
IPB039N10N3G Applications
Power Management
Audio
Motor Drive & Control
Industrial
Automotive
The IPB039N10N3 G is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB039N10N3 G is in the TO-263-7 package with 214W power dissipation.
IPB039N10N3G Features
Excellent switching performance
World's lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
Environmentally friendly
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
IPB039N10N3G Applications
Power Management
Audio
Motor Drive & Control
Industrial
Automotive
The three parts on the right have similar specifications to IPB039N10N3 G.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusNumber of TerminationsTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Supplier Device PackageAdditional FeatureView Compare
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IPB039N10N3 GYES6SILICONe3icon-pbfree yes1 (Unlimited)EAR99Matte Tin (Sn)FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED4R-PSSO-G6Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNELTO-263AA160A0.0039Ohm640A100V340 mJMETAL-OXIDE SEMICONDUCTOR214WRoHS Compliant---------------------- -
YES-SILICONe3yes1 (Unlimited)EAR99MATTE TINFET General Purpose PowerSINGLEGULL WING260compliant404R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--70A0.0097Ohm280A80V90 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete2MOSFET (Metal Oxide)100W TcN-Channel9.7m Ω @ 46A, 10V3.5V @ 46μA2410pF @ 40V70A Tc35nC @ 10V80V6V 10V±20V--
-
-----1 (Unlimited)--------------------------ROHS3 CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™-Obsolete-MOSFET (Metal Oxide)42W TcN-Channel9.6mOhm @ 30A, 10V2.2V @ 250μA1.6pF @ 15V35A Tc15nC @ 10V30V4.5V 10V±20VD2PAK (TO-263AB)-
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TINFET General Purpose PowerSINGLEGULL WING260compliant404R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--80A0.0062Ohm320A60V530 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete2MOSFET (Metal Oxide)250W TcN-Channel6.2m Ω @ 80A, 10V2V @ 180μA5100pF @ 30V80A Tc157nC @ 10V60V4.5V 10V±20V-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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