Infineon Technologies IPB036N12N3 G

Name: IPB036N12N3 G
Brand: Infineon Technologies
SKU: 2479964-IPB036N12N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB036N12N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479964-IPB036N12N3 G

Description:: MOSFET N-CH 120V 180A TO263-7

ECAD Model:

Datasheet:: IPB036N12N3 G

Specifications

Infineon Technologies IPB036N12N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB036N12N3 G.

Surface Mount
YES
Number of Terminals
6
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G6
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-263
Drain Current-Max (Abs) (ID)
180A
Drain-source On Resistance-Max
0.0036Ohm
Pulsed Drain Current-Max (IDM)
720A
DS Breakdown Voltage-Min
120V
Avalanche Energy Rating (Eas)
900 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPB036N12N3 G Description
The IPB036N12N3 G is an OptiMOS? N-channel Power MOSFET offering at the same time the lowest ON-state resistance in the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS? technology gives new possibilities for optimized solutions.

IPB036N12N3 G Features
Excellent switching performance
World's lowest RDS (ON)
Very low Qg and Qgd
Excellent gate charge x RDS (ON) product (FOM)
MSL1 rated 2
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required

IPB036N12N3 G Applications
Power Management
Motor Drive & Control
Computers & Computer Peripherals
Portable Devices
LED Lighting

Product Comparison

The three parts on the right have similar specifications to IPB036N12N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Number of Terminations

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Additional Feature

Subcategory

View Compare
IPB036N12N3 G

Infineon Technologies

YES

6

SILICON

e3

icon-pbfree no

1 (Unlimited)

EAR99

Tin (Sn)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G6

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-263

180A

0.0036Ohm

720A

120V

900 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB023N04NGATMA1

Infineon Technologies

-

-

SILICON

e3

yes

1 (Unlimited)

EAR99

MATTE TIN

SINGLE

GULL WING

260

unknown

40

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

-

400A

40V

150 mJ

-

RoHS Compliant

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

2

MOSFET (Metal Oxide)

167W Tc

N-Channel

2.3m Ω @ 90A, 10V

4V @ 95μA

10000pF @ 20V

90A Tc

120nC @ 10V

40V

10V

±20V

90A

-

-

IPB036N12N3 G vs IPB023N04NGATMA1
IPB049N06L3GATMA1

Infineon Technologies

YES

-

SILICON

-

yes

1 (Unlimited)

EAR99

-

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

80A

0.0047Ohm

320A

60V

77 mJ

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

2

MOSFET (Metal Oxide)

115W Tc

N-Channel

4.7m Ω @ 80A, 10V

2.2V @ 58μA

8400pF @ 30V

80A Tc

50nC @ 4.5V

60V

4.5V 10V

±20V

-

LOGIC LEVEL COMPATIBLE

-

IPB036N12N3 G vs IPB049N06L3GATMA1
IPB097N08N3 G

Infineon Technologies

YES

-

SILICON

e3

yes

1 (Unlimited)

EAR99

MATTE TIN

SINGLE

GULL WING

260

compliant

40

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

70A

0.0097Ohm

280A

80V

90 mJ

-

RoHS Compliant

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

2

MOSFET (Metal Oxide)

100W Tc

N-Channel

9.7m Ω @ 46A, 10V

3.5V @ 46μA

2410pF @ 40V

70A Tc

35nC @ 10V

80V

6V 10V

±20V

-

-

FET General Purpose Power

IPB036N12N3 G vs IPB097N08N3 G

Certification

Related parts for IPB036N12N3 G

IPB009N03L G

Infineon Technologies

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IPB04N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK
IPB023N04NGATMA1

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MOSFET N-CH 40V 90A TO263-3
IPB049N06L3GATMA1

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MOSFET N-CH 60V 80A TO263-3
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MOSFET N-CH 80V 70A TO263-3
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Part Number	Manufacturers	Description	Stock	Price
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6 Tab RoHS: Compliant	980	1 $5.748 10 $4.998 25 $4.9429 100 $4.35 250 $4.128 500 $3.727
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant	764	1 $7.03 10 $6.325 100 $5.2007 500 $4.35736
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant	764	1 $7.03 10 $6.325 100 $5.2007 500 $4.35736
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-CH 120V 180A TO263-7 RoHS: Compliant	0	1000 $3.82105
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6 Tab) TO-263 RoHS: Compliant	1852	4 $6.4132 10 $5.6227 50 $5.5717 100 $4.5645
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6 Tab RoHS: Compliant	980	2 $5.737 10 $4.9879 25 $4.933 100 $4.342 250 $4.12 500 $3.721
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6 Tab) TO-263 RoHS: Compliant	956	4 $7.125
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin TO-263 T/R (Alt: RoHS: Compliant	3000	1000 $4.13533 2000 $4.00194 3000 $3.87688 5000 $3.75939 10000 $3.70328 25000 $3.64882 50000 $3.59594
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A 7-Pin(6 Tab) TO-263 - RoHS: Compliant	0	1000 $3.49 2000 $3.39 4000 $3.29 6000 $3.19 10000 $3.09
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET, N CHANNEL, 120V, 180A, TO263-7, Transisto	1169	1 $6.57 10 $5.59 25 $5.34 50 $5.09 100 $4.84 250 $4.6 500 $4.12
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 180A I(D), 120V, 0. RoHS: Compliant	2185	1 $3.3 25 $3.07 100 $2.94 500 $2.83 1000 $2.68
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	1746	1 $6.57 10 $5.59 100 $4.84 250 $4.6 500 $4.12 1000 $3.48
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	311	1 $6.57 10 $5.59 100 $4.84 250 $4.6 500 $4.12 1000 $3.48
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-CH 120V 180A OPTIMOS3 TO263, EA	379	1 $4.85 10 $3.84 50 $3.51 250 $3.17 500 $2.83
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET N-CH 120V 180A OPTIMOS3 TO263, RL	1451	10 $3.84 50 $3.51 250 $3.17 500 $2.83
IPB036N12N3G DISTI #IPB036N12N3G	Infineon Technologies AG		569
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG		376
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	INSTOCK	105
IPB036N12N3-G DISTI #IPB036N12N3-G	Infineon Technologies AG	INSTOCK	105
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET, N-CH, 120V, 180A, TO263-7 RoHS: Compliant	1652	1 $4.61 10 $3.92 100 $3.39 250 $3.21 500 $2.89
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6 Tab RoHS: Compliant	956	1 $5.7 10 $5.12 50 $5.07 100 $4.15
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6 Tab RoHS: Compliant	1852	1 $5.03 10 $4.41 50 $4.37 100 $3.58
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFETs RoHS: Compliant	980	1 $5.737 10 $4.9879 25 $4.933 100 $4.342 250 $4.12
IPB036N12N3GATMA1 DISTI #IPB036N12N3GATMA1	Infineon Technologies AG	MOSFET, N-CH, 120V, 180A, TO263-7 RoHS: Compliant	1169	1 $10.4 10 $8.85 100 $7.66 250 $7.28 500 $6.53 1000 $5.51
IPB036N12N3 G DISTI #IPB036N12N3 G	Infineon Technologies AG	RoHS(ship within 1day)	300	1 $6.77 10 $5.77 50 $5 100 $4.77 500 $4.58 1000 $4.48

IPB036N~~(2)~~
IPB036~~(2)~~
IPB03~~(34)~~
IPB0~~(75)~~
IPB~~(73)~~

Infineon Technologies IPB036N12N3 G

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