IPB034N03L G

Infineon Technologies IPB034N03L G

Part Number:
IPB034N03L G
Manufacturer:
Infineon Technologies
Ventron No:
3070529-IPB034N03L G
Description:
MOSFET N-CH 30V 80A TO-263-3
ECAD Model:
Datasheet:
IPB034N03L G

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Specifications
Infineon Technologies IPB034N03L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB034N03L G.
  • Package / Case
    PG-TO263-3
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
IPB034N03L G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB034N03L G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB034N03L G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPB034N03L G.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mount
    Mounting Type
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    Surface Mount
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    View Compare
  • IPB034N03L G
    IPB034N03L G
    PG-TO263-3
    Tape & Reel (TR)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB03N03LB
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    Non-RoHS Compliant
    Surface Mount
    Surface Mount
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2006
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    80A
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    150W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    2.8m Ω @ 55A, 10V
    2V @ 100μA
    7624pF @ 15V
    80A Tc
    59nC @ 5V
    4.5V 10V
    ±20V
    80A
    0.0039Ohm
    320A
    580 mJ
    Contains Lead
    -
    -
    -
    -
    -
  • IPB08CN10N G
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    RoHS Compliant
    -
    Surface Mount
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2007
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MATTE TIN
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    167W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    8.2m Ω @ 95A, 10V
    4V @ 130μA
    6660pF @ 50V
    95A Tc
    100nC @ 10V
    10V
    ±20V
    -
    0.0082Ohm
    380A
    262 mJ
    -
    YES
    compliant
    100V
    95A
    100V
  • IPB065N06L G
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    RoHS Compliant
    -
    Surface Mount
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2011
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MATTE TIN
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    -
    40
    4
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    250W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    6.2m Ω @ 80A, 10V
    2V @ 180μA
    5100pF @ 30V
    80A Tc
    157nC @ 10V
    4.5V 10V
    ±20V
    -
    0.0062Ohm
    320A
    530 mJ
    -
    YES
    compliant
    60V
    80A
    60V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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