Infineon Technologies IPB030N08N3 G

Name: IPB030N08N3 G
Brand: Infineon Technologies
SKU: 2480304-IPB030N08N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB030N08N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2480304-IPB030N08N3 G

Description:: MOSFET N-CH 80V 160A TO263-7

ECAD Model:

Datasheet:: IPB030N08N3 G

Specifications

Infineon Technologies IPB030N08N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB030N08N3 G.

Surface Mount
YES
Number of Terminals
6
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
7
JESD-30 Code
R-PSSO-G6
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (Abs) (ID)
160A
Drain-source On Resistance-Max
0.003Ohm
Pulsed Drain Current-Max (IDM)
640A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
510 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
RoHS Status
RoHS Compliant

Description

IPB030N08N3 G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 510 mJ.160A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 640A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 80V.

IPB030N08N3 G Features
the avalanche energy rating (Eas) is 510 mJ
based on its rated peak drain current 640A.

IPB030N08N3 G Applications
There are a lot of Infineon Technologies AG
IPB030N08N3 G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

Product Comparison

The three parts on the right have similar specifications to IPB030N08N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

RoHS Status

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Number of Terminations

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Additional Feature

Subcategory

Voltage - Rated DC

Current Rating

Lead Free

View Compare
IPB030N08N3 G

Infineon Technologies

YES

6

SILICON

e3

icon-pbfree no

1 (Unlimited)

EAR99

Matte Tin (Sn)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

7

R-PSSO-G6

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

160A

0.003Ohm

640A

80V

510 mJ

METAL-OXIDE SEMICONDUCTOR

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB023N04NGATMA1

Infineon Technologies

-

-

SILICON

e3

yes

1 (Unlimited)

EAR99

MATTE TIN

SINGLE

GULL WING

260

unknown

40

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

400A

40V

150 mJ

-

RoHS Compliant

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

2

MOSFET (Metal Oxide)

167W Tc

N-Channel

2.3m Ω @ 90A, 10V

4V @ 95μA

10000pF @ 20V

90A Tc

120nC @ 10V

40V

10V

±20V

90A

-

-

-

-

-

IPB030N08N3 G vs IPB023N04NGATMA1
IPB049N06L3GATMA1

Infineon Technologies

YES

-

SILICON

-

yes

1 (Unlimited)

EAR99

-

SINGLE

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

80A

0.0047Ohm

320A

60V

77 mJ

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

2

MOSFET (Metal Oxide)

115W Tc

N-Channel

4.7m Ω @ 80A, 10V

2.2V @ 58μA

8400pF @ 30V

80A Tc

50nC @ 4.5V

60V

4.5V 10V

±20V

-

LOGIC LEVEL COMPATIBLE

-

-

-

-

IPB030N08N3 G vs IPB049N06L3GATMA1
IPB03N03LA

Infineon Technologies

-

-

SILICON

e0

-

1 (Unlimited)

EAR99

Tin/Lead (Sn/Pb)

SINGLE

GULL WING

220

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

0.0041Ohm

385A

-

960 mJ

-

Non-RoHS Compliant

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

2

MOSFET (Metal Oxide)

150W Tc

N-Channel

2.7m Ω @ 55A, 10V

2V @ 100μA

7027pF @ 15V

80A Tc

57nC @ 5V

-

4.5V 10V

±20V

80A

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

25V

80A

Contains Lead

IPB030N08N3 G vs IPB03N03LA