Infineon Technologies IPB025N08N3 G

Name: IPB025N08N3 G
Brand: Infineon Technologies
SKU: 2479956-IPB025N08N3 G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB025N08N3 G

Manufacturer:: Infineon Technologies

Ventron No:: 2479956-IPB025N08N3 G

Description:: MOSFET N-CH 80V 120A TO263-3

ECAD Model:

Datasheet:: IPB025N08N3 G

Specifications

Infineon Technologies IPB025N08N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB025N08N3 G.

Surface Mount
YES
Number of Terminals
2
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
icon-pbfree no
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Transistor Application
SWITCHING
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-263AB
Drain Current-Max (Abs) (ID)
120A
Drain-source On Resistance-Max
0.0025Ohm
Pulsed Drain Current-Max (IDM)
480A
DS Breakdown Voltage-Min
80V
Avalanche Energy Rating (Eas)
1430 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
300W
RoHS Status
RoHS Compliant

Description

IPB025N08N3 G Description
The IPB025N08N3 G is an N-channel Power MOSFET with performance-leading benchmark OptiMOS? technology. The Infineon IPB025N08N3 G is the market leader in highly efficient solutions for power generation, power supply, and power consumption applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB025N08N3 G is in the TO-263-3 package with 300W power dissipation.

IPB025N08N3 G Features
Optimized technology for DC-to-DC converters
Excellent gate charge x RDS (ON) product (FOM)
Superior thermal resistance
Dual-sided cooling
Low parasitic inductance
Normal level
100% avalanche tested
Ideal for high-frequency switching and synchronous rectification
Qualified according to JEDEC for target applications
Halogen-free, Green device

IPB025N08N3 G Applications
Power Management
Consumer Electronics
Communications & Networking
Motor Drive & Control
LED Lighting
Automotive

Product Comparison

The three parts on the right have similar specifications to IPB025N08N3 G.

Image

Part Number

Manufacturer

Surface Mount

Number of Terminals

Transistor Element Material

JESD-609 Code

Pbfree Code

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

FET Technology

Power Dissipation-Max (Abs)

RoHS Status

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Mount

Number of Pins

Number of Terminations

Continuous Drain Current (ID)

Additional Feature

Voltage - Rated DC

Current Rating

Lead Free

View Compare
IPB025N08N3 G

Infineon Technologies

YES

2

SILICON

e3

icon-pbfree no

1 (Unlimited)

EAR99

Tin (Sn)

FET General Purpose Power

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

N-CHANNEL

TO-263AB

120A

0.0025Ohm

480A

80V

1430 mJ

METAL-OXIDE SEMICONDUCTOR

300W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPB04N03LB G

Infineon Technologies

-

-

-

-

-

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

MOSFET (Metal Oxide)

107W Tc

N-Channel

3.5m Ω @ 55A, 10V

2V @ 70μA

5203pF @ 15V

80A Tc

40nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

IPB025N08N3 G vs IPB04N03LB G
IPB023N04NGATMA1

Infineon Technologies

-

-

SILICON

e3

yes

1 (Unlimited)

EAR99

MATTE TIN

-

SINGLE

GULL WING

260

unknown

40

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

-

400A

40V

150 mJ

-

-

RoHS Compliant

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

Obsolete

MOSFET (Metal Oxide)

167W Tc

N-Channel

2.3m Ω @ 90A, 10V

4V @ 95μA

10000pF @ 20V

90A Tc

120nC @ 10V

40V

10V

±20V

Surface Mount

3

2

90A

-

-

-

-

IPB025N08N3 G vs IPB023N04NGATMA1
IPB03N03LA

Infineon Technologies

-

-

SILICON

e0

-

1 (Unlimited)

EAR99

Tin/Lead (Sn/Pb)

FET General Purpose Power

SINGLE

GULL WING

220

-

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

-

0.0041Ohm

385A

-

960 mJ

-

-

Non-RoHS Compliant

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

Obsolete

MOSFET (Metal Oxide)

150W Tc

N-Channel

2.7m Ω @ 55A, 10V

2V @ 100μA

7027pF @ 15V

80A Tc

57nC @ 5V

-

4.5V 10V

±20V

Surface Mount

-

2

80A

LOGIC LEVEL COMPATIBLE

25V

80A

Contains Lead

IPB025N08N3 G vs IPB03N03LA

Certification

Related parts for IPB025N08N3 G

IPB009N03L G

Infineon Technologies

MOSFET N-CH 30V 180A TO263-7
IPB03N03LB

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK
IPB04N03LB G

Infineon Technologies

MOSFET N-CH 30V 80A D2PAK
IPB023N04NGATMA1

Infineon Technologies

MOSFET N-CH 40V 90A TO263-3
IPB049N06L3GATMA1

Infineon Technologies

MOSFET N-CH 60V 80A TO263-3
IPB097N08N3 G

Infineon Technologies

MOSFET N-CH 80V 70A TO263-3
IPB096N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 35A TO-263-3
IPB08CN10N G

Infineon Technologies

MOSFET N-CH 100V 95A TO263-3
IPB03N03LA

Infineon Technologies

MOSFET N-CH 25V 80A D2PAK
IPB065N06L G

Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

Popular Search Part Number Related Keywords Search Tags

IPB025N08N3 G Price
IPB025N08N3 G Picture
IPB025N08N3 G Buy
IPB025N08N3 G Distributor
IPB025N08N3 G Image
IPB025N08N3 G Inquiry
IPB025N08N3 G Manufacturer
IPB025N08N3 G Part
IPB025N08N3 G Description
IPB025N08N3 G Technical Data
IPB025N08N3 G Stock
IPB025N08N3 G Wholesales
IPB025N08N3 G PDF
IPB025N08N3 G Inventory
IPB025N08N3 G Supplier
IPB025N08N3 G Datasheet
IPB025N08N3 G Rfq
IPB025N08N3 G Specification

Part Number	Manufacturers	Description	Stock	Price
IPB025N08N3GATMA1 DISTI #V72:2272_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	491	1 $5.474 10 $4.6929 25 $4.394 100 $3.682 250 $3.314
IPB025N08N3GATMA1 DISTI #V36:1790_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
IPB025N08N3GATMA1 DISTI #IPB025N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant	7603	1 $6 10 $5.359 100 $4.394 500 $3.55806
IPB025N08N3GATMA1 DISTI #IPB025N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant	7603	1 $6 10 $5.359 100 $4.394 500 $3.55806
IPB025N08N3GATMA1 DISTI #IPB025N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant	5000	1000 $2.91337 2000 $2.76771
IPB025N08N3 G DISTI #32731516	Infineon Technologies AG	0	1000	4 $6.426 10 $5.7758 50 $5.712 100 $4.6792 200 $4.284
IPB025N08N3GATMA1 DISTI #31005994	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	1000	1000 $2.3063
IPB025N08N3GATMA1 DISTI #32864934	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	1000	5 $2.5717 25 $2.4949 50 $2.4226 100 $2.3544 250 $2.2899 500 $2.2288 1000 $2.1709
IPB025N08N3GATMA1 DISTI #30331029	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	491	3 $5.8845 10 $5.0449 25 $4.7236 100 $3.9581 250 $3.5625
IPB025N08N3GATMA1 DISTI #SP000311980	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: RoHS: Compliant	2000	1000 $2.49 2000 $2.39 4000 $2.29 6000 $2.19 10000 $1.99
IPB025N08N3 G DISTI #IPB025N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk RoHS: Compliant	0	149 $2.39 151 $2.29 300 $2.19 745 $2.09 1490 $2.09
IPB025N08N3GXT DISTI #IPB025N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2 Tab) TO-263 - T RoHS: Compliant	0	1000 $2.69 2000 $2.59 4000 $2.49 6000 $2.39 10000 $2.39
IPB025N08N3GATMA1 DISTI #60R2648	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 120A, TO-263, Transistor	0	1 $5 10 $4.25 25 $4.06 50 $3.88 100 $3.69 250 $3.5 500 $3.14
IPB025N08N3 G DISTI #726-IPB025N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1428	1 $5 10 $4.25 100 $3.69 250 $3.5 500 $3.14 1000 $2.64 2000 $2.51
IPB025N08N3 G DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0 RoHS: Not Compliant	2700	1 $2.75 25 $2.56 100 $2.45 500 $2.36 1000 $2.24
IPB025N08N3GATMA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0 RoHS: Compliant	20	1 $2.75 25 $2.56 100 $2.45 500 $2.36 1000 $2.24
IPB025N08N3GATMA1 DISTI #8986898P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 120A TO263-3, RL	258	10 $1.98
IPB025N08N3GATMA1 DISTI #1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	1424	1 $4.34 10 $3.3 100 $2.87 250 $2.72 500 $2.44
IPB025N08N3GATMA1 DISTI #1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	324	1 $7.54 10 $6.4 100 $5.56 250 $5.27 500 $4.73 1000 $3.98 2000 $3.78
IPB025N08N3GATMA1 DISTI #XSKDRABS0032304	Infineon Technologies AG	RoHS: Compliant	3000	1000 $3.696 3000 $3.444

IPB025N~~(4)~~
IPB025~~(4)~~
IPB02~~(37)~~
IPB0~~(75)~~
IPB~~(73)~~

Infineon Technologies IPB025N08N3 G

Quick Request Quote

MT3608 Converter Manufacturer, Working Principle and Applications

78L05 Voltage Regulator Characteristics, Applications, 78L05 vs 7805 and More

A Complete Guide to TXS0102DCUR Voltage Level Translator

SN74LVC1G08DBVR Characteristics, Specifications, Layout, Advantages and Applications