Infineon Technologies IPB020N04N G
- Part Number:
- IPB020N04N G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484714-IPB020N04N G
- Description:
- MOSFET N-CH 40V 140A TO263-7
- ECAD Model:
-
- Datasheet:
- IPB020N04N G
Infineon Technologies IPB020N04N G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB020N04N G.
- Surface MountYES
- Number of Terminals6
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree yes
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G6
- Qualification StatusNot Qualified
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-263
- Drain Current-Max (Abs) (ID)140A
- Drain-source On Resistance-Max0.002Ohm
- Pulsed Drain Current-Max (IDM)980A
- DS Breakdown Voltage-Min40V
- Avalanche Energy Rating (Eas)140 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)167W
- RoHS StatusRoHS Compliant
IPB020N04N G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 140 mJ.As shown in the table below, the drain current of this device is 140A.There is no pulsed drain current maximum for this device based on its rated peak drain current 980A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.
IPB020N04N G Features
the avalanche energy rating (Eas) is 140 mJ
based on its rated peak drain current 980A.
IPB020N04N G Applications
There are a lot of Infineon Technologies AG
IPB020N04N G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 140 mJ.As shown in the table below, the drain current of this device is 140A.There is no pulsed drain current maximum for this device based on its rated peak drain current 980A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.
IPB020N04N G Features
the avalanche energy rating (Eas) is 140 mJ
based on its rated peak drain current 980A.
IPB020N04N G Applications
There are a lot of Infineon Technologies AG
IPB020N04N G applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The three parts on the right have similar specifications to IPB020N04N G.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)PublishedNumber of TerminationsMountVoltage - Rated DCCurrent RatingContinuous Drain Current (ID)Lead FreeView Compare
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IPB020N04N GYES6SILICONe3icon-pbfree yes1 (Unlimited)EAR99MATTE TINULTRA-LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING260compliant404R-PSSO-G6Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNELTO-263140A0.002Ohm980A40V140 mJMETAL-OXIDE SEMICONDUCTOR167WRoHS Compliant-------------------------- -
-----1 (Unlimited)---------------------------ROHS3 CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK (TO-263AB)-55°C~175°C TJTape & Reel (TR)OptiMOS™ObsoleteMOSFET (Metal Oxide)42W TcN-Channel9.6mOhm @ 30A, 10V2.2V @ 250μA1.6pF @ 15V35A Tc15nC @ 10V30V4.5V 10V±20V-------
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TIN-FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDcompliantNOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING--95A0.0082Ohm380A100V262 mJ--RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™ObsoleteMOSFET (Metal Oxide)167W TcN-Channel8.2m Ω @ 95A, 10V4V @ 130μA6660pF @ 50V95A Tc100nC @ 10V100V10V±20V20072-----
-
--SILICONe0-1 (Unlimited)EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLEFET General Purpose PowerSINGLEGULL WING220-NOT SPECIFIED4R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING---0.0041Ohm385A-960 mJ--Non-RoHS CompliantSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™ObsoleteMOSFET (Metal Oxide)150W TcN-Channel2.7m Ω @ 55A, 10V2V @ 100μA7027pF @ 15V80A Tc57nC @ 5V-4.5V 10V±20V20062Surface Mount25V80A80AContains Lead
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