Infineon Technologies IKW50N65F5FKSA1
- Part Number:
- IKW50N65F5FKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554832-IKW50N65F5FKSA1
- Description:
- IGBT 650V 80A 305W PG-TO247-3
- Datasheet:
- IKW50N65F5FKSA1
Infineon Technologies IKW50N65F5FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IKW50N65F5FKSA1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- SeriesTrenchStop®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation305W
- Element ConfigurationSingle
- Power Dissipation305W
- Input TypeStandard
- Collector Emitter Voltage (VCEO)1.6V
- Max Collector Current80A
- Reverse Recovery Time52 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 25A, 12 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
- Gate Charge120nC
- Current - Collector Pulsed (Icm)150A
- Td (on/off) @ 25°C21ns/175ns
- Switching Energy490μJ (on), 160μJ (off)
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IKW50N65F5FKSA1 Description
IKW50N65F5FKSA1 is a single IGBT with a Collector-Emitter Breakdown Voltage of 650V from Infineon Technologies. IKW50N65F5FKSA1 operates between -40°C~175°C, and its Current - Collector (Ic) (Max) is 80A. The IKW50N65F5FKSA1 has 3 pins and it is available in Tube packaging way. IKW50N65F5FKSA1 has a 650V Voltage - Collector Emitter Breakdown (Max) value.
IKW50N65F5FKSA1 Features
650Vbreakdownvoltage
Low gate charge QG
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
IKW50N65F5FKSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IKW50N65F5FKSA1 is a single IGBT with a Collector-Emitter Breakdown Voltage of 650V from Infineon Technologies. IKW50N65F5FKSA1 operates between -40°C~175°C, and its Current - Collector (Ic) (Max) is 80A. The IKW50N65F5FKSA1 has 3 pins and it is available in Tube packaging way. IKW50N65F5FKSA1 has a 650V Voltage - Collector Emitter Breakdown (Max) value.
IKW50N65F5FKSA1 Features
650Vbreakdownvoltage
Low gate charge QG
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
IKW50N65F5FKSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IKW50N65F5FKSA1 More Descriptions
Trans IGBT Chip N-CH 650V 80A 305000mW Automotive 3-Pin(3 Tab) TO-247 Tube
IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3
650V DuoPack IGBT and Diode High speed switching series fifth generation
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHSInfineon SCT
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3
650V DuoPack IGBT and Diode High speed switching series fifth generation
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHSInfineon SCT
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
The three parts on the right have similar specifications to IKW50N65F5FKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Power DissipationElement ConfigurationPower DissipationInput TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsPin CountNumber of ElementsPower - MaxTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)IGBT TypePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Case ConnectionHalogen FreeView Compare
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IKW50N65F5FKSA116 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)EAR99Tin (Sn)305WSingle305WStandard1.6V80A52 ns650V1.6V400V, 25A, 12 Ω, 15V2.1V @ 15V, 50A120nC150A21ns/175ns490μJ (on), 160μJ (off)UnknownNoROHS3 CompliantLead Free---------------
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16 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop®2008e3yesActive1 (Unlimited)EAR99Tin (Sn)333WSingle-Standard600V100A130 ns600V-400V, 50A, 7 Ω, 15V2.3V @ 15V, 50A315nC200A23ns/235ns2.36mJ-NoROHS3 CompliantLead FreeSILICON331333WPOWER CONTROLN-CHANNEL54 ns297 nsTrench Field Stop----
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26 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop™2003e3yesActive1 (Unlimited)EAR99Tin (Sn)275WSingle-Standard650V80A81 ns650V-400V, 50A, 12 Ω, 15V2.1V @ 15V, 50A120nC200A25ns/172ns1.5mJ (on), 500μJ (off)--ROHS3 CompliantLead FreeSILICON3-1275WPOWER CONTROLN-CHANNEL54 ns220 nsTrenchNOT SPECIFIEDNOT SPECIFIEDCOLLECTORHalogen Free
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26 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTubeTrenchStop™2003-yesActive1 (Unlimited)--274WSingle-Standard650V80A70 ns650V-400V, 50A, 8.2 Ω, 15V1.7V @ 15V, 50A120nC200A20ns/127ns1.23mJ (on), 550μJ (off)--ROHS3 CompliantLead FreeSILICON3-1274WPOWER CONTROLN-CHANNEL45 ns198 nsTrenchNOT SPECIFIEDNOT SPECIFIEDCOLLECTORHalogen Free
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